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GB2140617B - Methods of forming a field effect transistor - Google Patents

Methods of forming a field effect transistor

Info

Publication number
GB2140617B
GB2140617B GB08402263A GB8402263A GB2140617B GB 2140617 B GB2140617 B GB 2140617B GB 08402263 A GB08402263 A GB 08402263A GB 8402263 A GB8402263 A GB 8402263A GB 2140617 B GB2140617 B GB 2140617B
Authority
GB
United Kingdom
Prior art keywords
methods
forming
field effect
effect transistor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08402263A
Other versions
GB8402263D0 (en
GB2140617A (en
Inventor
Wolfgang M Feist
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Priority to GB08402263A priority Critical patent/GB2140617B/en
Publication of GB8402263D0 publication Critical patent/GB8402263D0/en
Publication of GB2140617A publication Critical patent/GB2140617A/en
Application granted granted Critical
Publication of GB2140617B publication Critical patent/GB2140617B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H10D30/0327—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon on sapphire substrates, e.g. of silicon-on-sapphire [SOS] transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H10D30/615—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel comprising a MOS gate electrode and at least one non-MOS gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/832—Thin-film junction FETs [JFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/875—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having thin-film semiconductor bodies
GB08402263A 1980-03-03 1984-01-27 Methods of forming a field effect transistor Expired GB2140617B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08402263A GB2140617B (en) 1980-03-03 1984-01-27 Methods of forming a field effect transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12678780A 1980-03-03 1980-03-03
GB08402263A GB2140617B (en) 1980-03-03 1984-01-27 Methods of forming a field effect transistor

Publications (3)

Publication Number Publication Date
GB8402263D0 GB8402263D0 (en) 1984-02-29
GB2140617A GB2140617A (en) 1984-11-28
GB2140617B true GB2140617B (en) 1985-06-19

Family

ID=26287237

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08402263A Expired GB2140617B (en) 1980-03-03 1984-01-27 Methods of forming a field effect transistor

Country Status (1)

Country Link
GB (1) GB2140617B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2527385B1 (en) * 1982-04-13 1987-05-22 Suwa Seikosha Kk THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY PANEL USING THIS TYPE OF TRANSISTOR
US5238857A (en) * 1989-05-20 1993-08-24 Fujitsu Limited Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure
JP3426043B2 (en) * 1994-09-27 2003-07-14 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE638316A (en) * 1962-10-15
GB1507091A (en) * 1974-03-29 1978-04-12 Siemens Ag Schottky-gate field-effect transistors
US3958266A (en) * 1974-04-19 1976-05-18 Rca Corporation Deep depletion insulated gate field effect transistors
FR2460543A1 (en) * 1979-06-29 1981-01-23 Radiotechnique Compelec FIELD-TYPE FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

Also Published As

Publication number Publication date
GB8402263D0 (en) 1984-02-29
GB2140617A (en) 1984-11-28

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940128