GB2111987A - Heterocyclic semiconductors and gas sensors - Google Patents
Heterocyclic semiconductors and gas sensors Download PDFInfo
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- GB2111987A GB2111987A GB08234133A GB8234133A GB2111987A GB 2111987 A GB2111987 A GB 2111987A GB 08234133 A GB08234133 A GB 08234133A GB 8234133 A GB8234133 A GB 8234133A GB 2111987 A GB2111987 A GB 2111987A
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- film
- element according
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- co2h
- gas
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- 239000004065 semiconductor Substances 0.000 title description 4
- 125000000623 heterocyclic group Chemical group 0.000 title 1
- 150000001875 compounds Chemical class 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims abstract description 19
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 15
- 229910052802 copper Inorganic materials 0.000 claims abstract description 11
- 239000001257 hydrogen Substances 0.000 claims abstract description 11
- 229910052794 bromium Inorganic materials 0.000 claims abstract description 9
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 8
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 7
- -1 COOCnH2n+1 Chemical group 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 4
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract description 4
- 229910052740 iodine Inorganic materials 0.000 claims abstract description 4
- 229910052742 iron Inorganic materials 0.000 claims abstract description 4
- 229910052745 lead Inorganic materials 0.000 claims abstract description 4
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 4
- 229910052753 mercury Inorganic materials 0.000 claims abstract description 4
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 4
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 claims abstract description 3
- 239000004020 conductor Substances 0.000 claims abstract description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 21
- JCXJVPUVTGWSNB-UHFFFAOYSA-N Nitrogen dioxide Chemical compound O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 3
- WFPZPJSADLPSON-UHFFFAOYSA-N dinitrogen tetraoxide Chemical compound [O-][N+](=O)[N+]([O-])=O WFPZPJSADLPSON-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 abstract description 2
- 239000010941 cobalt Substances 0.000 abstract description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 239000010949 copper Substances 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- WSMYVTOQOOLQHP-UHFFFAOYSA-N Malondialdehyde Chemical compound O=CCC=O WSMYVTOQOOLQHP-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 229940118019 malondialdehyde Drugs 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 4
- XSZYBMMYQCYIPC-UHFFFAOYSA-N 4,5-dimethyl-1,2-phenylenediamine Chemical compound CC1=CC(N)=C(N)C=C1C XSZYBMMYQCYIPC-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000002678 macrocyclic compounds Chemical class 0.000 description 3
- 229910052701 rubidium Inorganic materials 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 241000270722 Crocodylidae Species 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- LNNWVNGFPYWNQE-GMIGKAJZSA-N desomorphine Chemical compound C1C2=CC=C(O)C3=C2[C@]24CCN(C)[C@H]1[C@@H]2CCC[C@@H]4O3 LNNWVNGFPYWNQE-GMIGKAJZSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002061 vacuum sublimation Methods 0.000 description 2
- VXYSFSCCSQAYJV-UHFFFAOYSA-N 2-methylpropanedial Chemical compound O=CC(C)C=O VXYSFSCCSQAYJV-UHFFFAOYSA-N 0.000 description 1
- DEZKOKATRQCKTP-UHFFFAOYSA-N 4-formyl-5-oxopentanoic acid Chemical compound OC(=O)CCC(C=O)C=O DEZKOKATRQCKTP-UHFFFAOYSA-N 0.000 description 1
- 101150047265 COR2 gene Proteins 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- 101100467189 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) QCR2 gene Proteins 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- JNGZXGGOCLZBFB-IVCQMTBJSA-N compound E Chemical compound N([C@@H](C)C(=O)N[C@@H]1C(N(C)C2=CC=CC=C2C(C=2C=CC=CC=2)=N1)=O)C(=O)CC1=CC(F)=CC(F)=C1 JNGZXGGOCLZBFB-IVCQMTBJSA-N 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 125000006575 electron-withdrawing group Chemical group 0.000 description 1
- 125000003754 ethoxycarbonyl group Chemical group C(=O)(OCC)* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- XULSCZPZVQIMFM-IPZQJPLYSA-N odevixibat Chemical compound C12=CC(SC)=C(OCC(=O)N[C@@H](C(=O)N[C@@H](CC)C(O)=O)C=3C=CC(O)=CC=3)C=C2S(=O)(=O)NC(CCCC)(CCCC)CN1C1=CC=CC=C1 XULSCZPZVQIMFM-IPZQJPLYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- LMBFAGIMSUYTBN-MPZNNTNKSA-N teixobactin Chemical compound C([C@H](C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CO)C(=O)N[C@H](CCC(N)=O)C(=O)N[C@H]([C@@H](C)CC)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CO)C(=O)N[C@H]1C(N[C@@H](C)C(=O)N[C@@H](C[C@@H]2NC(=N)NC2)C(=O)N[C@H](C(=O)O[C@H]1C)[C@@H](C)CC)=O)NC)C1=CC=CC=C1 LMBFAGIMSUYTBN-MPZNNTNKSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
- G01N27/126—Composition of the body, e.g. the composition of its sensitive layer comprising organic polymers
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D257/00—Heterocyclic compounds containing rings having four nitrogen atoms as the only ring hetero atoms
- C07D257/10—Heterocyclic compounds containing rings having four nitrogen atoms as the only ring hetero atoms condensed with carbocyclic rings or ring systems
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electrochemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
A gas sensor element comprises a film of a semiconducting compound of formula I supported by a non-conductive substrate, the film being disposed between conductors for supplying a current to the film and withdrawing a current therefrom. The compounds of formula I <IMAGE> in which:- M represents 2H, Mn, Fe, Co, Ni, Cu, Hg, Cd, Pb, Pt, or Pd; R1 represents H or CH3, Cl, Br, I, CN, CO2H, COOCnH2n+1, CONH2 or NO2; R2 represents H or CH3; and R3<a> and R3<b>, which may be identical or different represent H, NO2, Cl, CO2H or CH3; provided that when M represents cobalt at least one of R1, R2, R3<a> and R3<b> is other than hydrogen, are novel except for cases where M is Fe, one or both of R3<a> and R3<b> is CH3 or Ce and R1 is H or CH3; where M is Cu or Ni and R1 is Br and where M is 2H and R1 is H or Br.
Description
SPECIFICATION
Semiconductors
This invention relates to semiconductors useful in thin film gas sensors.
At present, gas sensors which incorporate elements comprising a thin film of the semiconductor copper phthalocyanin, the electrical conductivity of which is increased by sorption of a gas such as
NOX, require the elements to be heated to elevated temperatures in order for such sorption to be reversible. Exposure of heated elements to flammable vapours such as C5 hydrocarbons can be hazardous because of the risk of ignitition and the life of the sensor element may be limited because of chemical attack thereon by gases such as NOX.
It has now been found that semiconducting thin film gas sensor elements can be produced from certain compounds which enable sensor devices incorporating the elements to be operated at relatively low temperatures, in some cases at ambient.
According to the present invention, a gas sensor element comprises a film of a semiconducting compound of formula I supported by a non-conductive substrate, the film being disposed between conductors for supplying a current to the film and withdrawing a current therefrom.
in which:
M represents 2H, Mn, Fe, Co, Ni, Cu, Hg, Cd, Pb, Pt or Pd;
R1 represents H, CH3, Cl, Br, I, CN, CO2H, COOCnH2n+1, CONH2 or NO2;
R2 represents H or CH3 and R3a and R3b, which may be identical or different, represent H, NO2, CI, CO2H or CH3;
provided that when M represents cobalt at least one of R1, R2, R3a and R3b is other than hydrogen.
When the film is required to be highly sensitive to low levels of gas, it is generally preferred that the overall effect of the substituents R1 R2, R3a and R3bis electron donating. If R1 is electron withdrawing, e.g.
Cl or Br, then at least one of Ra and Rb which are generally identical, usually represents methyl.
When, however, the film is required to show satisfactory reversibility of gas uptake at high gas concentrations, the overall effect of the substituents is preferably an electron withdrawing substituent such as Br or NO2.
Generally, compounds in which, when R2 is methyl, R1 is hydrogen are preferred because of ease of accessibility.
When R1 represents NO2, Br, CI, COOEt, R2 usually represents hydrogen, and at least one of Ra and Rb, typically both Ra and Rb, usually represents H or methyl.
Compounds in which M represents 2H, Cu or Ni are of particular interest and especially those compounds in which at least one of R3a and R3b represents CH3, R2 represents hydrogen, R1 represents CO2Et, NO2, Br, H or CH3 and M represents hydrogen. When M represents Cu it is highly preferred that none of Ri, R2, R3a or R3b is an electron withdrawing group.
The present invention also includes within its scope, compounds of formula I hereinbefore described perse provided that when M represents Co at least one of R1, R2, and R3a and R3b is other than hydrogen; when M represents Fe and one or both of R3a and R3b is CH3 or Cl, R1 is other than H or CH3; when M represents Cu or Ni, R1 is other than Brand when M represents 2K, R1 is other than H or Br.
Non-metallic compounds of formula I (M = 2H) may be produced by reaction of a compound of
Formula II
with a compound offormula III
Ill R2COCHR1COR2 typically in a polar solvent such as ethanol, provided that R1 is other than a nitro group. As compounds of formula III in which R1 represents a nitro group, e.g.
2 - nitromalondialdehyde, are liable to detonate, it is generally preferably for such compounds II to be treated with an alkali metal salt of lil which may exist in the form IV
IV A+ O--C(R2) C = C(N02)COR2 wherein A+ represents an alkali metal ion.
Once prepared, the macrocycle I may be converted into a metal complex by treatment with a suitable salt of the metal, e.g. an acetate.
Somewhat better yields of metal complexes I are however generally obtained by means of a template reaction in which a complex of II with a metal salt, e.g. an acetate, is reacted with Ill generally in a polar solvent. In general, sensor elements comprise a non-conductive substrate of e.g. glass or sapphire comprising electrodes in the form of films usually of the order of a micron in thickness, of a conductive metal such as copper, the electrodes being separated by a film of compound I which is also generally about the same thickness as that of the electrodes. A potential difference is applied to the electrodes giving rise to the passage of a current which is generally direct and which is usually very small, e.g.
10-12 amps. On uptake of gas by the film the conductivity is usually increased dramatically and the change in current is signalled visually or aurally.
As the film releases the sorbed gas the conductivity and current passed falls and the system may be so
The Chemical formula(e) appearing in the printed specification were submitted after the date of filing, the
formula(e) originally submitted being incapable of being satisfactorily reproduced.
designed that the signal ceases or continues. It is usually unnecessary for the sensor to be maintained at a temperature greater than 40"C.
Sensors comprising elements according to the present invention are particularly useful for the detection of electron accepting gases and vapours, particularly NO2, N204 and the halogens, for example NOX in diesel fumes produced by machinery in mineshafts. Such sensors are also useful for example in the detection of traces of NO2 in N2O.
The present invention is illustrated by the following Examples:
Example 1 Compound A: (1, R38 = R3b = CH3; R1= = H; R1 = 402Et; M = 2H)
The tetraethyl tetra-acetal of 2 - carboxyethylmalondialdehyde (C4H2806) (59 9) is acidified to pH 5 with aqueous hydrochloric acid (2 M). The liberated substitued malondialdehyde is extracted into ether (5 x 100 ml) and, after removal of the ether in a rotary evaporator, the pale red liquid (29.48 g) is dissolved in dry ethanol (250 ml) and added to 4,5 dimethyl - o - phenylenediamine (27.8 g) in dry ethanol (350 ml). This reaction mixture is stirred continuously in the dark for 60 hours. Filtration yields a bright orange solid, which is then dissolved in chloroform (500 ml).After concentration to 200 ml, slow addition of methanol produces the pure crystalline macrocycle A (5.51 g).
Preparation of thin film sensors
Glass microscope slides, of dimensions 76 x 25 mm, are used as the substrates upon which the films are prepared. The slides are thoroughly cleaned prior to use. Strips of aluminium foil 5 mm wide are carefully wrapped around the centres of the 76 mm span of the slides to form masks, and copper is deposited in vacuo on to one surface of the slide and foil. The foil strips are then removed, leaving two copper electrodes separated by a 5 mm gap.
The compound under investigation A is applied to the electrodes by vacuum sublimation. A number of electrodes are coated at the same time to ensure a uniform batch of films. The thickness of the films, measured by means of an interference microscope, is in all cases otthe order of 10-6m.
Sorption and desorption ofgas The copper electrodes of the thin film sample, prepared as hereinbefore described, are connected by means of crocodile clips to two electrical feed-throughs (tungsten pins with metal-to-glass seal) of a vacuum chamber. To ensure that a good electrical contact is formed, the electrical resistance between each of the crocodile clips and an additional clip temporarily attached elsewhere on each electrode is measured. When both the contacts have been checked in this way, and found to be satisfactory, the chamber is evacuated to about 10-4PA.
The films are maintained at room temperature and in the dark and a potential of 15 V, obtained from dry batteries, is applied across the film in each case. The current flowing through the film is measured using a
Keithley electrometer. The results obtained are given
in the form of the changes in the current observed on exposure to various ambients under these conditions.
Prior to the application of NOX to the films, it is established the compound exhibits no response to oxygen-free nitrogen; this gas is then used as a ballast gas into which a measured volume of NOX is injected as the nitrogen is admitted to the previously evacuated vacuum chamber containing the film under investigation. The nitrogen + NOX mixture is admitted to the chamber until the pressure reaches atmospheric pressure. The concentrations of NOX are quoted in parts per million (ppm), and represent estimated upper limits to the actual concentrations present The actual concentration of NOX quoted at a particular value, however, is constant for all experiments.
In most cases NOX is applied to a film in three concentrations, 10,100 and 1,000 ppm, each followed by evacuation prior to admission of the next.
In all cases the chamber is evacuated to about 10-4PA following each exposure, exposure times varying depending on the response.
Results
When 10 ppm NOX in nitrogen is admitted to the chamber containing the film sensor passing a current of 7 x 10-12 amps, the current rises with progressively decreasing steepness over a period of 15 minutes to an upper limit of about 5 x 10-11.
After evacuation for 20 minutes the current returns to 7 x 10-12 amps at which time 100 ppm NOXI nitrogen is admitted and the current rises over a period of about 20 minutes with progressively decreasing steepness to an upper limit 10-1 amps.
Evacuation over about 30 minutes reduces the current to 7 x 10-12 amps at which time 1,000 ppm
NOX/nitrogen is admitted and leads to a rise in current over a period of 30 minutes which progressively decreases in steepness and reaches an upper limit at 8 x 10-10 amps.
Example 2
CompoundS: (1, R3a = R3b = H; R2 = H; R1 = H; M =
Cu)
A given quantity of the required insoluble o phenylenediamine complex of copper diacetate is suspended in a stirred ethanolic solution of double the molar quantity of malondialdehyde. Although the suspensions change colour very rapidly, vigorous stirring in the dark should continue for 60 hours before filtering off the required product in 4045% yield.
The complex is highly coloured, very insoluble and does not melt below 300"C. It may be purified by vacuum sublimation at 250"C, although the rate of sublimation is slow.
Sensors are prepared as described in Example 1 and give identical conductivity results when treated with NOX.
Example 3
Compound C: (1, R3a = R3b = H; R2 = H; R1 = CH3; M Cu) Compound C is prepared as described in Example 2 except that malondialdehyde is replaced by 2
methylmalondialdehyde.
Sensors are prepared as described in Example 1 and give identical conducitivity results when treated with NOX.
Example 4
CompoundD: (1, R3a = R3b = CH3; R2 = H; R1 = H; M = Cu)
Compound D is prepared as described in Example 2 exceptthato- phenylenediamine is replaced by 4,5 - dimethyl -0 - phenylenediamine.
Sensors are prepared as described in Example 1 and give identical conductivity results when treated with NOX.
Example5
CompoundE: (1, R3a = R3b = CH3; R2 = H; R2 = H; R1 =CI;M=H} Compound E is produced as described in Example 1 except that the tetraethyl - tetra - acetal of 2 chloromalondialdehyde rather than of 2 - carboxyethylmalondialdehyde is used.
Sensors are prepared as described in Example 1 and give the following conductivity result:
Results
When 100 ppm NOX in nitrogen is admitted to the chamber containing the film which passes a current of 5 = 10-12 amps, the current rises with progressively decreasing steepness over about 10 minutes to an upper limit 10-12. Introduction of 1,000 ppm
NOX in nitrogen then leads to a rise in current over about 20 minutes which progressively decreases in steepness and which reaches an upper limit of about 10-9. Evacuation over about 20 minutes again reduces the current to 5 x 10-12 amps. The sensors of the present Example are less sensitive than those of Example 1 - 4 but release sorbed NOX more readily.
Example 6
Compound F: (1, .R3a = R3b = CHs23; R2 = H; R1 =
NO2; M = 2H)
CAUTION 2 - nitromalondialdehyde is a DETONA
TOR and MUST NOT BE ISOLATED.
The sodium salt of 2 - nitromalondialdehyde (13.9 g) is dissolved in ethanol (250 ml) containing 0.1 M of glacial acetic acid. To this is added a solution of.
4,5 - dimethyl o- phenylenediamine (13.6 g) in ethanol (250 ml). The reaction mixture is stirred continuously in the dark for 60 hours. The required macrocycle is obtained as a very insoluble bright red solid in 19.8% yield, which analyses satisfactorily without further purification.
Sensors are prepared as described in Example t and give conductivity results identical to those of
Example 5.
Example 7 CompoundG:(l,R1=R2-R = R3a = R3b = H; M = 2H)
The compound is prepared as described in Exam
ple 1, except that the tetreathyltetracetal of malon
dialdehyde is used in place of 2 - carboxyethylma
londialdehyde and o - phenylenediamine in place of 4,5 - dimethyl - o - phenylenediamine. Sensors are
prepared as described in Example 1 and give the following conductivity results:
Results
When 10 ppm NOX in nitrogen is admitted to the chamber containing the film the film sensor which
passes a current of about 5 = 10-12 amps, the
current rises immediately to about 20-11 amps.
Evacuation reduces the current immediately to 5 x 10Xl2 amps and admission of 100 ppm NOX in nitrogen leads to an immediate increase in conduc tivityto about 10-10 amps. Evacuation again reduces the current to 5 x 10-12 amps and admission of 1,000 ppm NOXlnitrogen raises the current to about 10-9 amps. Evacuation immediately reduces the current to 5x 10-12 amps. The film sensors of the present Example are thus both more sensitive and more readily release sorbed NOX than those of the previous Examples.
Example 8
Compound H: (1, R1 x R2 X H; R3a x R3b = CH3; M = 2H)
The compound is prepared as described in Example 1 except that malonaldehyde is used in place of 2 - carboxyethylmalonaldehyde.
Sensors are prepared as described in Example 1 and give conductivity results identical those described in Example 7.
Claims (14)
1. A gas sensor element comprising a film of a semiconducting compound of formula I supported by a non-conductive substrate, the film being disposed between conductors for supplying a current to the film and withdrawing a current therefrom.
in which:
M represents 2H, Mn, Fe, Co, Ni, Cu, Hg, Cd, Pb, Pt or Pd;
R1 represents H, CH3, CI, Br, I, CN, CO2H,
COOCnH2n+1, COHN2 or NO2; R2 represents H orCK3; and R3a and R3b, which may be identical or different
represent H, NO2, CI, CO2H or CH3;
provided that when M represents colbalt at least one of R1, R2, R3a and R3b is other than hydrogen.
2. An element according to Claim 1, in which M
represents 2H.
3. An element according to Claim 1 or2, in which
R1 represents Br or NO2.
4. An element according to any preceding claim, in which R2 represents hydrogen.
5. An element according to any preceding claim, in which R3a is identical to R3b.
6. An element according to any preceding claim, in which R3a or R3b represents hydrogen.
7. An element according to any preceding claim, in which R3a or R3b represents methyl.
8. An element according to any preceding claim, in which M = 2H, R1 = H or NO2, R2 = H and R3a x R3b =HorCH3.
9. An element substantially as described in any one of the Examples.
10. An element according to any preceding claim, in which the film thickness is of the order of 1
micron.
11. The compound according to Claim 1 of formula I in which
M represents 2H, Mn, Fe, Co, Ni, Cu, Hg, Cd, Pb, Pt or Pd;
R1 represents H, Ch3, Cl, Br, I, CN, CO2H,
COOCnH2n+1, CONH2 or NO2;
R2 represents H or CH3 and R38 and R3b, which may be identical or different represent H, NO2, Ci, CO2H or CH3; provided that when M represents Co at least one of R1, R2, R3a and
R3b is other than hydrogen; when M represents Fe and one or both of R3a and R3b is Ch3 or Cl, R1 is other than H or CH3; when M represents CLI or Ni, R1 is other than Br and when M represents 2H, R1 is other than H or Br.
12. The compound of formula I according to any one of Claims 2 to 9.
13. A method for the detection of an electron accepting gas or vapour in which the film of an element according to any preceding claim is exposed to the gas or vapour whilst a potential difference is applied to the film, whereby the current supplied to the film and withdrawn therefrom is increased, the increase in current being signalled.
14. A method according to Claim 13 in which the gas or vapour is a mixture of nitrogen dioxide and dinitrogentetroxide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08234133A GB2111987B (en) | 1981-12-01 | 1982-11-30 | Heterocyclic semiconductors and gas sensors |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8136127 | 1981-12-01 | ||
GB8233089 | 1982-11-19 | ||
GB08234133A GB2111987B (en) | 1981-12-01 | 1982-11-30 | Heterocyclic semiconductors and gas sensors |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2111987A true GB2111987A (en) | 1983-07-13 |
GB2111987B GB2111987B (en) | 1986-04-16 |
Family
ID=27261387
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08234133A Expired GB2111987B (en) | 1981-12-01 | 1982-11-30 | Heterocyclic semiconductors and gas sensors |
Country Status (1)
Country | Link |
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GB (1) | GB2111987B (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2186087A (en) * | 1986-01-31 | 1987-08-05 | Coal Ind | Heterocyclic semiconductor gas sensors |
EP0332934A2 (en) * | 1988-03-14 | 1989-09-20 | Siemens Aktiengesellschaft | Apparatus for measuring the partial pressure of gases or vapours |
EP0334779A1 (en) * | 1988-03-21 | 1989-09-27 | André De Haan | Method and apparatus to detect the nature of combustion gas with a view to optimize combustion and applications thereof |
EP0341201A2 (en) * | 1988-04-21 | 1989-11-08 | Ciba-Geigy Ag | Ultrathin layers from dibenzotetraazo-[14]-annulene derivatives |
EP0350451A2 (en) * | 1988-07-08 | 1990-01-10 | Ciba-Geigy Ag | Method for the production of electro-active Langmuir-Blodgett films |
WO1991007658A1 (en) * | 1989-11-08 | 1991-05-30 | British Technology Group Ltd. | Gas sensors and compounds suitable therefor |
WO1991007659A1 (en) * | 1989-11-08 | 1991-05-30 | British Technology Group Ltd. | Gas sensors and compounds suitable therefor |
US5733506A (en) * | 1989-11-08 | 1998-03-31 | British Technology Group, Ltd. | Gas sensors and compounds suitable therefor |
-
1982
- 1982-11-30 GB GB08234133A patent/GB2111987B/en not_active Expired
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2186087B (en) * | 1986-01-31 | 1989-10-25 | Coal Ind | Improvements in gas sensors |
GB2186087A (en) * | 1986-01-31 | 1987-08-05 | Coal Ind | Heterocyclic semiconductor gas sensors |
EP0332934A3 (en) * | 1988-03-14 | 1992-05-20 | Siemens Aktiengesellschaft | Apparatus for measuring the partial pressure of gases or vapours |
EP0332934A2 (en) * | 1988-03-14 | 1989-09-20 | Siemens Aktiengesellschaft | Apparatus for measuring the partial pressure of gases or vapours |
EP0334779A1 (en) * | 1988-03-21 | 1989-09-27 | André De Haan | Method and apparatus to detect the nature of combustion gas with a view to optimize combustion and applications thereof |
EP0341201A2 (en) * | 1988-04-21 | 1989-11-08 | Ciba-Geigy Ag | Ultrathin layers from dibenzotetraazo-[14]-annulene derivatives |
EP0341201A3 (en) * | 1988-04-21 | 1991-03-20 | Ciba-Geigy Ag | Ultrathin layers from dibenzotetraazo-[14]-annulene derivatives |
EP0350451A2 (en) * | 1988-07-08 | 1990-01-10 | Ciba-Geigy Ag | Method for the production of electro-active Langmuir-Blodgett films |
EP0350451A3 (en) * | 1988-07-08 | 1991-03-27 | Ciba-Geigy Ag | Method for the production of electro-active langmuir-blodgett films |
WO1991007658A1 (en) * | 1989-11-08 | 1991-05-30 | British Technology Group Ltd. | Gas sensors and compounds suitable therefor |
GB2239706A (en) * | 1989-11-08 | 1991-07-10 | Nat Res Dev | Gas sensors and compounds suitable therefor |
WO1991007659A1 (en) * | 1989-11-08 | 1991-05-30 | British Technology Group Ltd. | Gas sensors and compounds suitable therefor |
GB2239706B (en) * | 1989-11-08 | 1993-05-12 | Nat Res Dev | Gas sensors and compounds suitable therefor |
US5318912A (en) * | 1989-11-08 | 1994-06-07 | British Technology Group Limited | Gas sensors and compounds suitable therefor |
US5451674A (en) * | 1989-11-08 | 1995-09-19 | British Technology Limited | Transition metal azatetrabenzoporphyrins useful as gas sensors |
US5733506A (en) * | 1989-11-08 | 1998-03-31 | British Technology Group, Ltd. | Gas sensors and compounds suitable therefor |
Also Published As
Publication number | Publication date |
---|---|
GB2111987B (en) | 1986-04-16 |
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732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19951130 |