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GB2066299B - Growing doped iii-v alloy layers by molecular beam epitaxy - Google Patents

Growing doped iii-v alloy layers by molecular beam epitaxy

Info

Publication number
GB2066299B
GB2066299B GB8043742A GB8043742A GB2066299B GB 2066299 B GB2066299 B GB 2066299B GB 8043742 A GB8043742 A GB 8043742A GB 8043742 A GB8043742 A GB 8043742A GB 2066299 B GB2066299 B GB 2066299B
Authority
GB
United Kingdom
Prior art keywords
molecular beam
beam epitaxy
alloy layers
doped iii
growing doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8043742A
Other versions
GB2066299A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Priority to GB8043742A priority Critical patent/GB2066299B/en
Publication of GB2066299A publication Critical patent/GB2066299A/en
Application granted granted Critical
Publication of GB2066299B publication Critical patent/GB2066299B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
GB8043742A 1979-12-19 1979-12-19 Growing doped iii-v alloy layers by molecular beam epitaxy Expired GB2066299B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8043742A GB2066299B (en) 1979-12-19 1979-12-19 Growing doped iii-v alloy layers by molecular beam epitaxy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8043742A GB2066299B (en) 1979-12-19 1979-12-19 Growing doped iii-v alloy layers by molecular beam epitaxy

Publications (2)

Publication Number Publication Date
GB2066299A GB2066299A (en) 1981-07-08
GB2066299B true GB2066299B (en) 1983-02-02

Family

ID=10518318

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8043742A Expired GB2066299B (en) 1979-12-19 1979-12-19 Growing doped iii-v alloy layers by molecular beam epitaxy

Country Status (1)

Country Link
GB (1) GB2066299B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4477308A (en) * 1982-09-30 1984-10-16 At&T Bell Laboratories Heteroepitaxy of multiconstituent material by means of a _template layer
US4632710A (en) * 1983-05-10 1986-12-30 Raytheon Company Vapor phase epitaxial growth of carbon doped layers of Group III-V materials
US4553022A (en) * 1984-06-04 1985-11-12 The Perkin-Elmer Corporation Effusion cell assembly
US4518846A (en) * 1984-06-11 1985-05-21 International Business Machines Corporation Heater assembly for molecular beam epitaxy furnace
GB2323209A (en) * 1997-03-13 1998-09-16 Sharp Kk Molecular beam epitaxy apparatus and method

Also Published As

Publication number Publication date
GB2066299A (en) 1981-07-08

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee