GB2062949B - Single filament semiconductor laser with large emitting area - Google Patents

Single filament semiconductor laser with large emitting area

Info

Publication number: GB2062949B
Authority: GB; United Kingdom
Prior art keywords: semiconductor laser; emitting area; single filament; large emitting; filament
Prior art date: 1979-10-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

GB8014175A

Other versions

GB2062949A (en

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

RCA Corp

Original Assignee

RCA Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-10-12

Filing date

1980-04-30

Publication date

1983-08-10

1980-04-30 Application filed by RCA Corp filed Critical RCA Corp

1981-05-28 Publication of GB2062949A publication Critical patent/GB2062949A/en

1983-08-10 Application granted granted Critical

1983-08-10 Publication of GB2062949B publication Critical patent/GB2062949B/en

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
- H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

Physics & Mathematics (AREA)
Geometry (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

GB8014175A 1979-10-12 1980-04-30 Single filament semiconductor laser with large emitting area Expired GB2062949B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US8438779A	1979-10-12	1979-10-12

Publications (2)

Publication Number	Publication Date
GB2062949A GB2062949A (en)	1981-05-28
GB2062949B true GB2062949B (en)	1983-08-10

Family

ID=22184652

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB8014175A Expired GB2062949B (en)	1979-10-12	1980-04-30	Single filament semiconductor laser with large emitting area

Country Status (4)

Country	Link
JP (1)	JPS5661190A (en)
DE (1)	DE3021104A1 (en)
GB (1)	GB2062949B (en)
IT (1)	IT1193534B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2129211B (en) *	1982-10-21	1987-01-14	Rca Corp	Semiconductor laser and a method of making same
FR2535121B1 (en) *	1982-10-25	1989-01-06	Rca Corp	SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREOF
JPH0732278B2 (en) *	1982-10-27	1995-04-10	アールシーエーコーポレーシヨン	Semiconductor laser
US4523316A (en) *	1982-10-29	1985-06-11	Rca Corporation	Semiconductor laser with non-absorbing mirror facet
JPS62188220A (en) *	1986-02-13	1987-08-17	Sharp Corp	Method of liquid-phase epitaxy
CN114150367B (en) *	2021-11-26	2023-07-04	华中科技大学	Laser cladding repair method and repair system for high-temperature alloy single crystal defect

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4166253A (en) *	1977-08-15	1979-08-28	International Business Machines Corporation	Heterostructure diode injection laser having a constricted active region
IT1121922B (en) *	1978-07-31	1986-04-23	Rca Corp	SEMICONDUCTOR LASER, EMISSING A SINGLE BEAM OF LIGHT

1980
- 1980-04-30 GB GB8014175A patent/GB2062949B/en not_active Expired
- 1980-05-14 IT IT22046/80A patent/IT1193534B/en active
- 1980-06-04 DE DE19803021104 patent/DE3021104A1/en not_active Withdrawn
- 1980-06-11 JP JP7957180A patent/JPS5661190A/en active Pending

Also Published As

Publication number	Publication date
IT1193534B (en)	1988-07-08
IT8022046A0 (en)	1980-05-14
GB2062949A (en)	1981-05-28
DE3021104A1 (en)	1981-04-23
JPS5661190A (en)	1981-05-26

Publication	Publication Date	Title
JPS5646593A (en)	1981-04-27	Heteroostructure semiconductor laser
JPS53144285A (en)	1978-12-15	Semiconductor light emitting element
JPS56138973A (en)	1981-10-29	Light emitting diode unit
DE3071946D1 (en)	1987-05-07	A semiconductor light emitting device
GB2043340B (en)	1983-09-14	Light emitting diode and method of making the same
GB2038538B (en)	1983-02-16	Semiconductor laser diode
JPS5698370A (en)	1981-08-07	Diode structure
DE3065856D1 (en)	1984-01-19	A semiconductor light emitting device
GB8323243D0 (en)	1983-09-28	Light emitting diode
GB2046983B (en)	1983-03-16	Semiconductor lasers
JPS55118992A (en)	1980-09-12	Light emitting composition
JPS5648193A (en)	1981-05-01	Light controlled integrated current diode laser
GB2025134B (en)	1983-03-02	Light emitting diode
GB2057748B (en)	1983-06-22	Semiconductor lasers
GB2062949B (en)	1983-08-10	Single filament semiconductor laser with large emitting area
GB2033155B (en)	1983-02-09	Light emissive diode structure
DE3574504D1 (en)	1990-01-04	LIGHT EMITTER.
JPS5693382A (en)	1981-07-28	Light emitting diode
JPS5680202A (en)	1981-07-01	Light emitting footwear
JPS5694683A (en)	1981-07-31	Semiconductor laser
JPS55151783A (en)	1980-11-26	Porcelain light emitting unit
JPS5534496A (en)	1980-03-11	Indicating light emitting diode array
JPS5669796A (en)	1981-06-11	Bothhside light emitting field effect light emitting lamp
GB2044519B (en)	1983-02-09	Laser emission element
JPS55125656A (en)	1980-09-27	Diode structure

Legal Events

Date	Code	Title	Description
1988-12-21	PCNP	Patent ceased through non-payment of renewal fee