GB2062689B - Method of cleaning a reactor - Google Patents

Method of cleaning a reactor

Info

Publication number: GB2062689B
Authority: GB; United Kingdom
Prior art keywords: reactor; cleaning
Prior art date: 1979-09-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

GB8030099A

Other versions

GB2062689A (en

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Koninklijke Philips NV

Original Assignee

Philips Gloeilampenfabrieken NV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-09-20

Filing date

1980-09-17

Publication date

1984-02-22

1980-09-17 Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV

1981-05-28 Publication of GB2062689A publication Critical patent/GB2062689A/en

1984-02-22 Application granted granted Critical

1984-02-22 Publication of GB2062689B publication Critical patent/GB2062689B/en

Status Expired legal-status Critical Current

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

Chemical & Material Sciences (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Crystallography & Structural Chemistry (AREA)
Mechanical Engineering (AREA)
Drying Of Semiconductors (AREA)
Chemical Vapour Deposition (AREA)
ing And Chemical Polishing (AREA)
Cleaning In General (AREA)
Physical Or Chemical Processes And Apparatus (AREA)
Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)

GB8030099A 1979-09-20 1980-09-17 Method of cleaning a reactor Expired GB2062689B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
NL7906996A NL7906996A (en)	1979-09-20	1979-09-20	METHOD FOR CLEANING A REAKTOR.

Publications (2)

Publication Number	Publication Date
GB2062689A GB2062689A (en)	1981-05-28
GB2062689B true GB2062689B (en)	1984-02-22

Family

ID=19833876

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB8030099A Expired GB2062689B (en)	1979-09-20	1980-09-17	Method of cleaning a reactor

Country Status (7)

Country	Link
JP (1)	JPS5653740A (en)
AU (1)	AU6247480A (en)
CA (1)	CA1143259A (en)
DE (1)	DE3035379A1 (en)
FR (1)	FR2465791A1 (en)
GB (1)	GB2062689B (en)
NL (1)	NL7906996A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4512812A (en) *	1983-09-22	1985-04-23	Varian Associates, Inc.	Method for reducing phosphorous contamination in a vacuum processing chamber
US4597989A (en) *	1984-07-30	1986-07-01	Burroughs Corporation	Method of depositing silicon films with reduced structural defects
US4657616A (en) *	1985-05-17	1987-04-14	Benzing Technologies, Inc.	In-situ CVD chamber cleaner
GB2183204A (en) *	1985-11-22	1987-06-03	Advanced Semiconductor Mat	Nitrogen trifluoride as an in-situ cleaning agent
US4786352A (en) *	1986-09-12	1988-11-22	Benzing Technologies, Inc.	Apparatus for in-situ chamber cleaning
US5000113A (en) *	1986-12-19	1991-03-19	Applied Materials, Inc.	Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5871811A (en) *	1986-12-19	1999-02-16	Applied Materials, Inc.	Method for protecting against deposition on a selected region of a substrate
JP2708533B2 (en) *	1989-03-14	1998-02-04	富士通株式会社	Method for removing residual gas from CVD apparatus
US5421957A (en) *	1993-07-30	1995-06-06	Applied Materials, Inc.	Low temperature etching in cold-wall CVD systems
EP1083593A1 (en) *	1999-09-10	2001-03-14	Interuniversitair Micro-Elektronica Centrum Vzw	Etching of silicon nitride by anhydrous halogen gas
EP1083592A1 (en) *	1999-09-10	2001-03-14	Interuniversitair Microelektronica Centrum Vzw	Etching of silicon nitride by anhydrous halogen gas

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE1202616B (en) *	1962-02-23	1965-10-07	Siemens Ag	Process for removing the semiconductor layer deposited on the heater during epitaxy
DE1240818B (en) *	1963-03-23	1967-05-24	Siemens Ag	Process for producing high-purity semiconductor material by deposition from the gas phase
CH433206A (en) *	1963-12-14	1967-04-15	Siemens Ag	Process for cleaning holders made of carbon, which are used for fastening carrier rods made of semiconductor material
DE1619997A1 (en) *	1967-03-29	1970-03-26	Siemens Ag	Process for the serial production of epitaxial layers from the gas phase
US3669774A (en) *	1969-11-20	1972-06-13	Rca Corp	Low temperature silicon etch
GB1539700A (en) *	1976-05-14	1979-01-31	Int Plasma Corp	Process for etching sio2
US4138306A (en) *	1976-08-31	1979-02-06	Tokyo Shibaura Electric Co., Ltd.	Apparatus for the treatment of semiconductors

1979
- 1979-09-20 NL NL7906996A patent/NL7906996A/en not_active Application Discontinuation
1980
- 1980-09-11 CA CA000360274A patent/CA1143259A/en not_active Expired
- 1980-09-15 FR FR8019848A patent/FR2465791A1/en active Granted
- 1980-09-17 GB GB8030099A patent/GB2062689B/en not_active Expired
- 1980-09-17 AU AU62474/80A patent/AU6247480A/en not_active Abandoned
- 1980-09-18 JP JP12866580A patent/JPS5653740A/en active Pending
- 1980-09-19 DE DE19803035379 patent/DE3035379A1/en not_active Withdrawn

Also Published As

Publication number	Publication date
FR2465791A1 (en)	1981-03-27
CA1143259A (en)	1983-03-22
GB2062689A (en)	1981-05-28
JPS5653740A (en)	1981-05-13
FR2465791B1 (en)	1984-07-13
DE3035379A1 (en)	1981-04-09
NL7906996A (en)	1981-03-24
AU6247480A (en)	1981-04-09

Publication	Publication Date	Title
GB2107573B (en)	1985-06-26	A method of diaper manufacture
ZA801127B (en)	1980-12-31	A hydroformaylation process
PH16588A (en)	1983-11-22	A method of manufacturing stainless steel
EP0044118A3 (en)	1982-01-27	A method of preparing a catalyst
DE3173336D1 (en)	1986-02-13	A method of tracing
GB2109932B (en)	1984-08-01	A method of diagnosis
JPS5550195A (en)	1980-04-11	Method of operating reactor
GB2062689B (en)	1984-02-22	Method of cleaning a reactor
DE3161671D1 (en)	1984-01-26	Process for the preparation of a substituted bromofluorobenzene and 3-bromo-4-fluorobenzonitrile
GB2067233B (en)	1983-06-02	Method of constructing a collector well
DE3061497D1 (en)	1983-02-03	A method of preparing a fluorine-containing compound
MY8600462A (en)	1986-12-31	A process for the in-solvent w-situ generation of n-substituted-2-halaocetanilides
JPS5499805A (en)	1979-08-07	Method of cleaning scale
JPS5415631A (en)	1979-02-05	Method of typewriting number
JPS5576998A (en)	1980-06-10	Operation method of reactor
JPS5643584A (en)	1981-04-22	Operation method of heavy water reactor
JPS5548691A (en)	1980-04-07	Method of making nuclear fuellcarbite
DE3367091D1 (en)	1986-11-27	A process for preparing nicotinonitriles and intermediates used therein
JPS5649989A (en)	1981-05-06	Nuclear reactor operation method
JPS5517405A (en)	1980-02-06	Method of operating nuclear reactor
DE3067035D1 (en)	1984-04-19	A method of preparing water purifying agents
JPS5557195A (en)	1980-04-26	Reactor operation method
JPS5626297A (en)	1981-03-13	Nuclear reactor starttup method
JPS54164340A (en)	1979-12-27	Method of cleaning well
BG29796A1 (en)	1982-12-15	A method of cleaning of zinc- vitriol solutions from chlor

Legal Events

Date	Code	Title	Description
1986-05-14	PCNP	Patent ceased through non-payment of renewal fee