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GB2056769B - Dual wavelength laser annealing of material - Google Patents

Dual wavelength laser annealing of material

Info

Publication number
GB2056769B
GB2056769B GB8024258A GB8024258A GB2056769B GB 2056769 B GB2056769 B GB 2056769B GB 8024258 A GB8024258 A GB 8024258A GB 8024258 A GB8024258 A GB 8024258A GB 2056769 B GB2056769 B GB 2056769B
Authority
GB
United Kingdom
Prior art keywords
laser annealing
wavelength laser
dual wavelength
dual
annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8024258A
Other versions
GB2056769A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB2056769A publication Critical patent/GB2056769A/en
Application granted granted Critical
Publication of GB2056769B publication Critical patent/GB2056769B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Organic Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Toxicology (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Laser Beam Processing (AREA)
GB8024258A 1978-11-28 1979-11-15 Dual wavelength laser annealing of material Expired GB2056769B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US96419378A 1978-11-28 1978-11-28

Publications (2)

Publication Number Publication Date
GB2056769A GB2056769A (en) 1981-03-18
GB2056769B true GB2056769B (en) 1983-03-30

Family

ID=25508237

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8024258A Expired GB2056769B (en) 1978-11-28 1979-11-15 Dual wavelength laser annealing of material

Country Status (7)

Country Link
JP (1) JPS55500964A (en)
CA (1) CA1129969A (en)
FR (1) FR2443138A1 (en)
GB (1) GB2056769B (en)
IT (1) IT1127616B (en)
NL (1) NL7920170A (en)
WO (1) WO1980001121A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1174285A (en) * 1980-04-28 1984-09-11 Michelangelo Delfino Laser induced flow of integrated circuit structure materials
US4542037A (en) * 1980-04-28 1985-09-17 Fairchild Camera And Instrument Corporation Laser induced flow of glass bonded materials
US6168744B1 (en) * 1996-10-08 2001-01-02 Board Of Trustees University Of Arkansas Process for sequential multi beam laser processing of materials
US8546805B2 (en) 2012-01-27 2013-10-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
US9558973B2 (en) 2012-06-11 2017-01-31 Ultratech, Inc. Laser annealing systems and methods with ultra-short dwell times
SG195515A1 (en) 2012-06-11 2013-12-30 Ultratech Inc Laser annealing systems and methods with ultra-short dwell times
US10083843B2 (en) 2014-12-17 2018-09-25 Ultratech, Inc. Laser annealing systems and methods with ultra-short dwell times

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3340601A (en) * 1963-07-17 1967-09-12 United Aircraft Corp Alloy diffused transistor
US3492072A (en) * 1965-04-14 1970-01-27 Westinghouse Electric Corp Apparatus for producing radiation patterns for forming etchant-resistant patterns and the like
US3585088A (en) * 1968-10-18 1971-06-15 Ibm Methods of producing single crystals on supporting substrates
US3848104A (en) * 1973-04-09 1974-11-12 Avco Everett Res Lab Inc Apparatus for heat treating a surface
US4151008A (en) * 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices
US3940289A (en) * 1975-02-03 1976-02-24 The United States Of America As Represented By The Secretary Of The Navy Flash melting method for producing new impurity distributions in solids
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
US3989778A (en) * 1975-12-17 1976-11-02 W. R. Grace & Co. Method of heat sealing thermoplastic sheets together using a split laser beam
DE2643893C3 (en) * 1976-09-29 1981-01-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of a layer provided with a structure on a substrate
US4087695A (en) * 1977-01-17 1978-05-02 The United States Of America As Represented By The Secretary Of The Army Method for producing optical baffling material using pulsed electron beams
DE2705444A1 (en) * 1977-02-09 1978-08-10 Siemens Ag Semiconductor prodn. process using locally limited heating - involves electromagnetic irradiation in specified pulses through mask
US4154625A (en) * 1977-11-16 1979-05-15 Bell Telephone Laboratories, Incorporated Annealing of uncapped compound semiconductor materials by pulsed energy deposition
US4147563A (en) * 1978-08-09 1979-04-03 The United States Of America As Represented By The United States Department Of Energy Method for forming p-n junctions and solar-cells by laser-beam processing
US4155779A (en) * 1978-08-21 1979-05-22 Bell Telephone Laboratories, Incorporated Control techniques for annealing semiconductors

Also Published As

Publication number Publication date
IT1127616B (en) 1986-05-21
FR2443138A1 (en) 1980-06-27
CA1129969A (en) 1982-08-17
NL7920170A (en) 1980-09-30
IT7927611A0 (en) 1979-11-27
FR2443138B1 (en) 1983-06-17
WO1980001121A1 (en) 1980-05-29
GB2056769A (en) 1981-03-18
JPS55500964A (en) 1980-11-13

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee