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GB2054263B - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
GB2054263B
GB2054263B GB8017929A GB8017929A GB2054263B GB 2054263 B GB2054263 B GB 2054263B GB 8017929 A GB8017929 A GB 8017929A GB 8017929 A GB8017929 A GB 8017929A GB 2054263 B GB2054263 B GB 2054263B
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
circuit device
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8017929A
Other versions
GB2054263A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6675979A external-priority patent/JPS55160459A/en
Priority claimed from JP9258579A external-priority patent/JPS5618460A/en
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB2054263A publication Critical patent/GB2054263A/en
Application granted granted Critical
Publication of GB2054263B publication Critical patent/GB2054263B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures
GB8017929A 1979-05-31 1980-06-02 Integrated circuit device Expired GB2054263B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6675979A JPS55160459A (en) 1979-05-31 1979-05-31 Semiconductor integrated circuit
JP9258579A JPS5618460A (en) 1979-07-23 1979-07-23 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
GB2054263A GB2054263A (en) 1981-02-11
GB2054263B true GB2054263B (en) 1983-07-20

Family

ID=26407959

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8017929A Expired GB2054263B (en) 1979-05-31 1980-06-02 Integrated circuit device

Country Status (3)

Country Link
US (1) US4404738A (en)
DE (1) DE3020609C2 (en)
GB (1) GB2054263B (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2056768B (en) * 1979-07-16 1983-07-27 Matsushita Electric Ind Co Ltd Semiconductor integrated circuits
JPS5792858A (en) * 1980-12-01 1982-06-09 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
DE3174824D1 (en) * 1980-12-17 1986-07-17 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit
EP0093304B1 (en) * 1982-04-19 1986-01-15 Matsushita Electric Industrial Co., Ltd. Semiconductor ic and method of making the same
US4546539A (en) * 1982-12-08 1985-10-15 Harris Corporation I2 L Structure and fabrication process compatible with high voltage bipolar transistors
KR900001267B1 (en) * 1983-11-30 1990-03-05 후지쓰 가부시끼가이샤 Manufacture of semiconductor device
US5070381A (en) * 1990-03-20 1991-12-03 Texas Instruments Incorporated High voltage lateral transistor
US5190884A (en) * 1991-01-18 1993-03-02 Exar Corporation Method of making vertical PNP transistor
KR950011017B1 (en) * 1991-07-01 1995-09-27 미쯔시다덴기산교 가부시기가이샤 Semiconductor device and manufacturing method
JPH05102175A (en) * 1991-10-07 1993-04-23 Sharp Corp Manufacture of semiconductor device
US5455189A (en) * 1994-02-28 1995-10-03 National Semiconductor Corporation Method of forming BICMOS structures
US5932922A (en) * 1994-08-08 1999-08-03 Semicoa Semiconductors Uniform current density and high current gain bipolar transistor
US5702959A (en) * 1995-05-31 1997-12-30 Texas Instruments Incorporated Method for making an isolated vertical transistor
DE19614876C1 (en) * 1996-04-16 1997-11-13 Telefunken Microelectron Simple mass production of integrated semiconductor device
EP0809286B1 (en) * 1996-05-14 2003-10-01 STMicroelectronics S.r.l. A process for the fabrication of semiconductor devices having various buried regions

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3566218A (en) * 1968-10-02 1971-02-23 Nat Semiconductor Corp The Multiple base width integrated circuit
US3817794A (en) * 1971-08-02 1974-06-18 Bell Telephone Labor Inc Method for making high-gain transistors
US3962717A (en) * 1974-10-29 1976-06-08 Fairchild Camera And Instrument Corporation Oxide isolated integrated injection logic with selective guard ring
DE2453134C3 (en) * 1974-11-08 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Planar diffusion process
GB1558281A (en) * 1975-07-31 1979-12-19 Tokyo Shibaura Electric Co Semiconductor device and logic circuit constituted by the semiconductor device
JPS5247383A (en) * 1975-10-13 1977-04-15 Toshiba Corp Semiconductor device
DE2557911C2 (en) * 1975-12-22 1982-11-04 Deutsche Itt Industries Gmbh, 7800 Freiburg Method for producing a monolithic integrated circuit
JPS5338276A (en) * 1976-09-20 1978-04-08 Toshiba Corp Semiconductor device
US4115797A (en) * 1976-10-04 1978-09-19 Fairchild Camera And Instrument Corporation Integrated injection logic with heavily doped injector base self-aligned with injector emitter and collector
US4087900A (en) * 1976-10-18 1978-05-09 Bell Telephone Laboratories, Incorporated Fabrication of semiconductor integrated circuit structure including injection logic configuration compatible with complementary bipolar transistors utilizing simultaneous formation of device regions
DE2715158A1 (en) * 1977-04-05 1978-10-19 Licentia Gmbh METHOD FOR PRODUCING AT LEAST ONE ANALOG CIRCUIT INTEGRATED WITH AT LEAST ONE I HIGH 2 L CIRCUIT
US4228448A (en) * 1977-10-07 1980-10-14 Burr Brown Research Corp. Bipolar integrated semiconductor structure including I2 L and linear type devices and fabrication methods therefor
DE2835330C3 (en) * 1978-08-11 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Semiconductor integrated bipolar circuit and process for its manufacture
US4272307A (en) * 1979-03-12 1981-06-09 Sprague Electric Company Integrated circuit with I2 L and power transistors and method for making

Also Published As

Publication number Publication date
US4404738A (en) 1983-09-20
DE3020609C2 (en) 1985-11-07
GB2054263A (en) 1981-02-11
DE3020609A1 (en) 1980-12-04

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19960602