GB2029145B - Non-volatile word-wise electrically erasable stores - Google Patents
Non-volatile word-wise electrically erasable storesInfo
- Publication number
- GB2029145B GB2029145B GB7922592A GB7922592A GB2029145B GB 2029145 B GB2029145 B GB 2029145B GB 7922592 A GB7922592 A GB 7922592A GB 7922592 A GB7922592 A GB 7922592A GB 2029145 B GB2029145 B GB 2029145B
- Authority
- GB
- United Kingdom
- Prior art keywords
- stores
- electrically erasable
- volatile word
- wise electrically
- wise
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19782828836 DE2828836C2 (en) | 1978-06-30 | 1978-06-30 | Non-volatile memory that can be electrically erased word by word |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2029145A GB2029145A (en) | 1980-03-12 |
GB2029145B true GB2029145B (en) | 1982-06-16 |
Family
ID=6043234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB7922592A Expired GB2029145B (en) | 1978-06-30 | 1979-06-28 | Non-volatile word-wise electrically erasable stores |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS558697A (en) |
DE (1) | DE2828836C2 (en) |
FR (1) | FR2430064B1 (en) |
GB (1) | GB2029145B (en) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1224062B (en) * | 1979-09-28 | 1990-09-26 | Ates Componenti Elettron | PROGRAMMING METHOD FOR AN ELECTRICALLY ALTERABLE NON-VOLATILE SEMICONDUCTOR MEMORY |
US4797856A (en) * | 1987-04-16 | 1989-01-10 | Intel Corporation | Self-limiting erase scheme for EEPROM |
US4875188A (en) * | 1988-01-12 | 1989-10-17 | Intel Corporation | Voltage margining circuit for flash eprom |
KR900019027A (en) * | 1988-05-23 | 1990-12-22 | 미다 가쓰시게 | Nonvolatile Semiconductor Memory |
US5095344A (en) * | 1988-06-08 | 1992-03-10 | Eliyahou Harari | Highly compact eprom and flash eeprom devices |
US4888738A (en) * | 1988-06-29 | 1989-12-19 | Seeq Technology | Current-regulated, voltage-regulated erase circuit for EEPROM memory |
JP2654596B2 (en) * | 1989-02-06 | 1997-09-17 | 株式会社日立製作所 | Non-volatile storage device |
US5844842A (en) | 1989-02-06 | 1998-12-01 | Hitachi, Ltd. | Nonvolatile semiconductor memory device |
EP0935255A2 (en) | 1989-04-13 | 1999-08-11 | SanDisk Corporation | Flash EEPROM system |
FR2647941B1 (en) * | 1989-06-06 | 1991-08-30 | Gemplus Card Int | MEMORY POINT ERASING METHOD, DEVICE FOR ITS IMPLEMENTATION, AND ITS USE IN A NON-POWERED MEMORY DEVICE |
DE69013237T2 (en) * | 1989-06-19 | 1995-02-23 | Texas Instruments Inc | Circuit and procedure for preparing deleted EEPROMS before programming. |
JP3448051B2 (en) * | 1990-03-31 | 2003-09-16 | 株式会社東芝 | Nonvolatile semiconductor memory device |
JP2709751B2 (en) * | 1990-06-15 | 1998-02-04 | 三菱電機株式会社 | Nonvolatile semiconductor memory device and data erasing method thereof |
US5361227A (en) | 1991-12-19 | 1994-11-01 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and memory system using the same |
US6781895B1 (en) | 1991-12-19 | 2004-08-24 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and memory system using the same |
JP3512833B2 (en) * | 1993-09-17 | 2004-03-31 | 株式会社東芝 | Nonvolatile semiconductor memory device |
KR0169267B1 (en) | 1993-09-21 | 1999-02-01 | 사토 후미오 | Nonvolatile Semiconductor Memory |
JP3202498B2 (en) * | 1994-03-15 | 2001-08-27 | 株式会社東芝 | Semiconductor storage device |
JP2987105B2 (en) * | 1996-06-10 | 1999-12-06 | ハライ エリヤホウ | Flash EEprom memory system and its use |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2643987C2 (en) * | 1974-09-20 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | n-channel memory FET |
JPS5193638A (en) * | 1975-02-14 | 1976-08-17 | ||
JPS5823677B2 (en) * | 1976-05-18 | 1983-05-17 | 三菱電機株式会社 | memory erasing device |
JPS5330838A (en) * | 1976-09-03 | 1978-03-23 | Fujitsu Ltd | Erasing method of erasable rom |
-
1978
- 1978-06-30 DE DE19782828836 patent/DE2828836C2/en not_active Expired
-
1979
- 1979-06-28 FR FR7916728A patent/FR2430064B1/en not_active Expired
- 1979-06-28 GB GB7922592A patent/GB2029145B/en not_active Expired
- 1979-06-29 JP JP8254279A patent/JPS558697A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
GB2029145A (en) | 1980-03-12 |
DE2828836A1 (en) | 1980-01-03 |
DE2828836C2 (en) | 1983-01-05 |
FR2430064A1 (en) | 1980-01-25 |
FR2430064B1 (en) | 1985-10-18 |
JPS558697A (en) | 1980-01-22 |
JPH0146949B2 (en) | 1989-10-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19980628 |