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GB2029145B - Non-volatile word-wise electrically erasable stores - Google Patents

Non-volatile word-wise electrically erasable stores

Info

Publication number
GB2029145B
GB2029145B GB7922592A GB7922592A GB2029145B GB 2029145 B GB2029145 B GB 2029145B GB 7922592 A GB7922592 A GB 7922592A GB 7922592 A GB7922592 A GB 7922592A GB 2029145 B GB2029145 B GB 2029145B
Authority
GB
United Kingdom
Prior art keywords
stores
electrically erasable
volatile word
wise electrically
wise
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7922592A
Other versions
GB2029145A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB2029145A publication Critical patent/GB2029145A/en
Application granted granted Critical
Publication of GB2029145B publication Critical patent/GB2029145B/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • G11C16/14Circuits for erasing electrically, e.g. erase voltage switching circuits
GB7922592A 1978-06-30 1979-06-28 Non-volatile word-wise electrically erasable stores Expired GB2029145B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782828836 DE2828836C2 (en) 1978-06-30 1978-06-30 Non-volatile memory that can be electrically erased word by word

Publications (2)

Publication Number Publication Date
GB2029145A GB2029145A (en) 1980-03-12
GB2029145B true GB2029145B (en) 1982-06-16

Family

ID=6043234

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7922592A Expired GB2029145B (en) 1978-06-30 1979-06-28 Non-volatile word-wise electrically erasable stores

Country Status (4)

Country Link
JP (1) JPS558697A (en)
DE (1) DE2828836C2 (en)
FR (1) FR2430064B1 (en)
GB (1) GB2029145B (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1224062B (en) * 1979-09-28 1990-09-26 Ates Componenti Elettron PROGRAMMING METHOD FOR AN ELECTRICALLY ALTERABLE NON-VOLATILE SEMICONDUCTOR MEMORY
US4797856A (en) * 1987-04-16 1989-01-10 Intel Corporation Self-limiting erase scheme for EEPROM
US4875188A (en) * 1988-01-12 1989-10-17 Intel Corporation Voltage margining circuit for flash eprom
KR900019027A (en) * 1988-05-23 1990-12-22 미다 가쓰시게 Nonvolatile Semiconductor Memory
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US4888738A (en) * 1988-06-29 1989-12-19 Seeq Technology Current-regulated, voltage-regulated erase circuit for EEPROM memory
JP2654596B2 (en) * 1989-02-06 1997-09-17 株式会社日立製作所 Non-volatile storage device
US5844842A (en) 1989-02-06 1998-12-01 Hitachi, Ltd. Nonvolatile semiconductor memory device
EP0935255A2 (en) 1989-04-13 1999-08-11 SanDisk Corporation Flash EEPROM system
FR2647941B1 (en) * 1989-06-06 1991-08-30 Gemplus Card Int MEMORY POINT ERASING METHOD, DEVICE FOR ITS IMPLEMENTATION, AND ITS USE IN A NON-POWERED MEMORY DEVICE
DE69013237T2 (en) * 1989-06-19 1995-02-23 Texas Instruments Inc Circuit and procedure for preparing deleted EEPROMS before programming.
JP3448051B2 (en) * 1990-03-31 2003-09-16 株式会社東芝 Nonvolatile semiconductor memory device
JP2709751B2 (en) * 1990-06-15 1998-02-04 三菱電機株式会社 Nonvolatile semiconductor memory device and data erasing method thereof
US5361227A (en) 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
US6781895B1 (en) 1991-12-19 2004-08-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
JP3512833B2 (en) * 1993-09-17 2004-03-31 株式会社東芝 Nonvolatile semiconductor memory device
KR0169267B1 (en) 1993-09-21 1999-02-01 사토 후미오 Nonvolatile Semiconductor Memory
JP3202498B2 (en) * 1994-03-15 2001-08-27 株式会社東芝 Semiconductor storage device
JP2987105B2 (en) * 1996-06-10 1999-12-06 ハライ エリヤホウ Flash EEprom memory system and its use

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2643987C2 (en) * 1974-09-20 1984-03-29 Siemens AG, 1000 Berlin und 8000 München n-channel memory FET
JPS5193638A (en) * 1975-02-14 1976-08-17
JPS5823677B2 (en) * 1976-05-18 1983-05-17 三菱電機株式会社 memory erasing device
JPS5330838A (en) * 1976-09-03 1978-03-23 Fujitsu Ltd Erasing method of erasable rom

Also Published As

Publication number Publication date
GB2029145A (en) 1980-03-12
DE2828836A1 (en) 1980-01-03
DE2828836C2 (en) 1983-01-05
FR2430064A1 (en) 1980-01-25
FR2430064B1 (en) 1985-10-18
JPS558697A (en) 1980-01-22
JPH0146949B2 (en) 1989-10-11

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19980628