GB2016803B - Thin film transistor construction and manufacturing methodof same - Google Patents

Thin film transistor construction and manufacturing methodof same

Info

Publication number: GB2016803B
Authority: GB; United Kingdom
Prior art keywords: methodof; manufacturing; thin film; same; film transistor
Prior art date: 1978-01-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

GB7902390A

Other versions

GB2016803A (en

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sharp Corp

Original Assignee

Sharp Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-01-23

Filing date

1979-01-23

Publication date

1982-08-18

1979-01-23 Application filed by Sharp Corp filed Critical Sharp Corp

1979-09-26 Publication of GB2016803A publication Critical patent/GB2016803A/en

1982-08-18 Application granted granted Critical

1982-08-18 Publication of GB2016803B publication Critical patent/GB2016803B/en

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form

GB7902390A 1978-01-23 1979-01-23 Thin film transistor construction and manufacturing methodof same Expired GB2016803B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP659578A JPS5499576A (en)	1978-01-23	1978-01-23	Thin-film transistor and its manufacture

Publications (2)

Publication Number	Publication Date
GB2016803A GB2016803A (en)	1979-09-26
GB2016803B true GB2016803B (en)	1982-08-18

Family

ID=11642676

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB7902390A Expired GB2016803B (en)	1978-01-23	1979-01-23	Thin film transistor construction and manufacturing methodof same

Country Status (3)

Country	Link
JP (1)	JPS5499576A (en)
DE (1)	DE2902303A1 (en)
GB (1)	GB2016803B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5669864A (en) *	1979-11-09	1981-06-11	Japan Electronic Ind Dev Assoc<Jeida>	Thin-film transistor
JPS5731179A (en) *	1980-07-31	1982-02-19	Sharp Corp	Formation of thin-film transistor
JPS5799774A (en) *	1980-11-19	1982-06-21	Sharp Corp	Forming method for thin-film transistor
US4404731A (en) *	1981-10-01	1983-09-20	Xerox Corporation	Method of forming a thin film transistor
JPS5874079A (en) *	1981-10-28	1983-05-04	Japan Electronic Ind Dev Assoc<Jeida>	thin film transistor
JPS59124162A (en) *	1982-12-29	1984-07-18	Sharp Corp	thin film transistor
JPS6045219A (en) *	1983-08-23	1985-03-11	Toshiba Corp	Active matrix type display device
GB8406330D0 (en) *	1984-03-10	1984-04-11	Lucas Ind Plc	Amorphous silicon field effect transistors
JPH0628317B2 (en) *	1985-05-23	1994-04-13	松下電器産業株式会社	Method of manufacturing thin film transistor
JPH0521798A (en) *	1991-02-18	1993-01-29	Alps Electric Co Ltd	Thin film transistor

1978
- 1978-01-23 JP JP659578A patent/JPS5499576A/en active Pending
1979
- 1979-01-22 DE DE19792902303 patent/DE2902303A1/en not_active Ceased
- 1979-01-23 GB GB7902390A patent/GB2016803B/en not_active Expired

Also Published As

Publication number	Publication date
JPS5499576A (en)	1979-08-06
DE2902303A1 (en)	1979-07-26
GB2016803A (en)	1979-09-26

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Legal Events

Date	Code	Title	Description
1998-09-09	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 19980123