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GB2011710B - Semiconductor structures - Google Patents

Semiconductor structures

Info

Publication number
GB2011710B
GB2011710B GB7848675A GB7848675A GB2011710B GB 2011710 B GB2011710 B GB 2011710B GB 7848675 A GB7848675 A GB 7848675A GB 7848675 A GB7848675 A GB 7848675A GB 2011710 B GB2011710 B GB 2011710B
Authority
GB
United Kingdom
Prior art keywords
semiconductor structures
semiconductor
structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7848675A
Other versions
GB2011710A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB7848675A priority Critical patent/GB2011710B/en
Publication of GB2011710A publication Critical patent/GB2011710A/en
Application granted granted Critical
Publication of GB2011710B publication Critical patent/GB2011710B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H03K19/09443—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors
    • H03K19/09445—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors with active depletion transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09414—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors with gate injection or static induction [STIL]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GB7848675A 1977-12-28 1978-12-15 Semiconductor structures Expired GB2011710B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB7848675A GB2011710B (en) 1977-12-28 1978-12-15 Semiconductor structures

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB5393177 1977-12-28
GB7848675A GB2011710B (en) 1977-12-28 1978-12-15 Semiconductor structures

Publications (2)

Publication Number Publication Date
GB2011710A GB2011710A (en) 1979-07-11
GB2011710B true GB2011710B (en) 1982-04-07

Family

ID=26267384

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7848675A Expired GB2011710B (en) 1977-12-28 1978-12-15 Semiconductor structures

Country Status (1)

Country Link
GB (1) GB2011710B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2130790B (en) * 1982-10-26 1986-04-16 Plessey Co Plc Integrated injection logic device
NL8401117A (en) * 1984-04-09 1985-11-01 Philips Nv SEMICONDUCTOR DEVICE WITH FIELD-EFFECT TRANSISTORS WITH INSULATED GATE ELECTRODES.
JP3400846B2 (en) * 1994-01-20 2003-04-28 三菱電機株式会社 Semiconductor device having trench structure and method of manufacturing the same

Also Published As

Publication number Publication date
GB2011710A (en) 1979-07-11

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee