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GB201011222D0 - Light guide array for an image sensor - Google Patents

Light guide array for an image sensor

Info

Publication number
GB201011222D0
GB201011222D0 GBGB1011222.5A GB201011222A GB201011222D0 GB 201011222 D0 GB201011222 D0 GB 201011222D0 GB 201011222 A GB201011222 A GB 201011222A GB 201011222 D0 GB201011222 D0 GB 201011222D0
Authority
GB
United Kingdom
Prior art keywords
light guide
image sensor
guide array
array
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB1011222.5A
Other versions
GB2481651B (en
GB2481651A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Candela Microsystems S Pte Ltd
Original Assignee
Candela Microsystems S Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Candela Microsystems S Pte Ltd filed Critical Candela Microsystems S Pte Ltd
Priority claimed from PCT/IB2009/006148 external-priority patent/WO2011001196A1/en
Priority claimed from US12/806,192 external-priority patent/US20110031381A1/en
Publication of GB201011222D0 publication Critical patent/GB201011222D0/en
Publication of GB2481651A publication Critical patent/GB2481651A/en
Application granted granted Critical
Publication of GB2481651B publication Critical patent/GB2481651B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H01L27/14621—
    • H01L27/14625—
    • H01L31/0203—
    • H01L31/0216—
    • H01L31/0232—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
    • G02B6/423—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using guiding surfaces for the alignment

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
GB1011222.5A 2009-07-02 2009-07-02 Light guide array for an image sensor Expired - Fee Related GB2481651B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/IB2009/006148 WO2011001196A1 (en) 2009-07-02 2009-07-02 Light guide array for an image sensor
US12/806,192 US20110031381A1 (en) 2007-12-28 2009-07-02 Light guide array for an image sensor

Publications (3)

Publication Number Publication Date
GB201011222D0 true GB201011222D0 (en) 2010-08-18
GB2481651A GB2481651A (en) 2012-01-04
GB2481651B GB2481651B (en) 2012-10-10

Family

ID=45218963

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1011222.5A Expired - Fee Related GB2481651B (en) 2009-07-02 2009-07-02 Light guide array for an image sensor
GB1203302.3A Expired - Fee Related GB2486361B (en) 2009-07-02 2009-07-02 Light guide array for an image sensor

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB1203302.3A Expired - Fee Related GB2486361B (en) 2009-07-02 2009-07-02 Light guide array for an image sensor

Country Status (1)

Country Link
GB (2) GB2481651B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6444066B2 (en) 2014-06-02 2018-12-26 キヤノン株式会社 Photoelectric conversion device and imaging system
JP6173259B2 (en) * 2014-06-02 2017-08-02 キヤノン株式会社 Photoelectric conversion device and imaging system

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6937193B2 (en) * 2002-06-04 2005-08-30 Skycross, Inc. Wideband printed monopole antenna
JP4310093B2 (en) * 2002-10-09 2009-08-05 キヤノン株式会社 Manufacturing method of solid-state imaging device
US8139131B2 (en) * 2005-01-18 2012-03-20 Panasonic Corporation Solid state imaging device and fabrication method thereof, and camera incorporating the solid state imaging device
JP4771466B2 (en) * 2005-11-10 2011-09-14 パナソニック株式会社 Solid-state imaging device and manufacturing method thereof
JP4821415B2 (en) * 2006-04-19 2011-11-24 凸版印刷株式会社 Color image sensor manufacturing method
KR101550866B1 (en) * 2009-02-09 2015-09-08 삼성전자주식회사 Method for manufacturing a image sensor by filling a upper part of dielectric trench and forming air gap to improve optical cross-talk

Also Published As

Publication number Publication date
GB2481651B (en) 2012-10-10
GB2486361B (en) 2012-10-10
HK1171567A1 (en) 2013-03-28
GB201203302D0 (en) 2012-04-11
GB2481651A (en) 2012-01-04
GB2486361A (en) 2012-06-13

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20200702