GB1522755A - Method of manufacturing a semiconductor device - Google Patents
Method of manufacturing a semiconductor deviceInfo
- Publication number
- GB1522755A GB1522755A GB28230/76A GB2823076A GB1522755A GB 1522755 A GB1522755 A GB 1522755A GB 28230/76 A GB28230/76 A GB 28230/76A GB 2823076 A GB2823076 A GB 2823076A GB 1522755 A GB1522755 A GB 1522755A
- Authority
- GB
- United Kingdom
- Prior art keywords
- contact regions
- oxide layer
- etching
- field oxide
- areas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 4
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 abstract 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Abstract
1522755 Semiconductor devices NCR CORP 7 July 1976 [25 July 1975] 28230/76 Heading H1K A method of producing openings for contact regions 18, 20, Fig. 2, for source and drain regions 12.1, 12.1<SP>1</SP> and 12.3, 12.3<SP>1</SP> respectively of IGFETS 12, 12<SP>1</SP> comprises two steps of providing a field oxide layer 24, Fig. 7, on the substrate covering two contact regions, etching the field oxide layer to expose selected areas of the contact regions, Fig. 5 (not shown), forming a plurality of superimposed gate insulating layers 28, 30, 32 on the field oxide layer and on the exposed areas of the contact regions, and etching selectively two gate insulating layers to expose areas of the contact regions that are smaller than the said selected areas. Preferably, the source and the drain regions, the lead conductors 14, 16 and the contact regions 18, 20 are produced by the same diffusion step involving the use of an oxide maze (22), Fig. 3 (not shown). A solution of ammonium fluoride and hydrogen fluoride etching oxide layer 28 at a faster rate as compared to its rate of etching nitride layer 30, is employed to form openings 36, 38, Fig. 9.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US59925675A | 1975-07-25 | 1975-07-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1522755A true GB1522755A (en) | 1978-08-31 |
Family
ID=24398900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB28230/76A Expired GB1522755A (en) | 1975-07-25 | 1976-07-07 | Method of manufacturing a semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5216174A (en) |
| CA (1) | CA1076266A (en) |
| DE (1) | DE2632942A1 (en) |
| FR (1) | FR2319198A1 (en) |
| GB (1) | GB1522755A (en) |
| IT (1) | IT1065959B (en) |
| NL (1) | NL7608227A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5031222A (en) * | 1973-07-19 | 1975-03-27 | ||
| JPS5941870A (en) * | 1982-08-25 | 1984-03-08 | Toshiba Corp | Manufacturing method of semiconductor device |
-
1976
- 1976-07-07 GB GB28230/76A patent/GB1522755A/en not_active Expired
- 1976-07-15 CA CA257,051A patent/CA1076266A/en not_active Expired
- 1976-07-20 IT IT25519/76A patent/IT1065959B/en active
- 1976-07-22 DE DE19762632942 patent/DE2632942A1/en not_active Ceased
- 1976-07-23 NL NL7608227A patent/NL7608227A/en not_active Application Discontinuation
- 1976-07-23 JP JP51087396A patent/JPS5216174A/en active Pending
- 1976-07-23 FR FR7622468A patent/FR2319198A1/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| NL7608227A (en) | 1977-01-27 |
| CA1076266A (en) | 1980-04-22 |
| FR2319198B1 (en) | 1980-07-25 |
| DE2632942A1 (en) | 1977-02-03 |
| FR2319198A1 (en) | 1977-02-18 |
| IT1065959B (en) | 1985-03-04 |
| JPS5216174A (en) | 1977-02-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |