GB1522258A - Production of semiconductor components - Google Patents
Production of semiconductor componentsInfo
- Publication number
- GB1522258A GB1522258A GB4935976A GB4935976A GB1522258A GB 1522258 A GB1522258 A GB 1522258A GB 4935976 A GB4935976 A GB 4935976A GB 4935976 A GB4935976 A GB 4935976A GB 1522258 A GB1522258 A GB 1522258A
- Authority
- GB
- United Kingdom
- Prior art keywords
- insulating layer
- window
- trenches
- semiconductor surface
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 239000011701 zinc Substances 0.000 abstract 2
- 229910052725 zinc Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76221—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO with a plurality of successive local oxidation steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
Abstract
1522258 Integrated circuit components SIEMENS AG 26 Nov 1976 [11 March 1976] 49359/76 Heading H1K A method of making an integrated circuit component comprises the steps of forming a frame-shaped window in a first insulating layer 3, the window surrounding a semiconductor surface area in which the component is to be formed, etching trenches (4) in the semiconductor surface exposed by the window such that the trenches extend through a PN junction formed between the semiconductor surface and a substrate 1, forming a second insulating layer 6 having a thickness greater than that of the first insulating layer in the trenches, and thereafter forming the said component in an area defined by the second insulating layer. Typically, the first and second insulating layers are respectively of silicon nitride and silicon dioxide, the latter being 1À5 microns thick. A channel stopper may be implanted or diffused in the trenches prior to the formation of the second insulating layer 6 by oxidation during which phosphorous irnplanted surface zinc (2), Fig. 1 (not shown) below the first insulating layer diffuses further to form n-conductivity type region 20. In the formation of a bipolar transistor, n+ collector contact zinc 7 is diffused through a window in the first insulating layer 3, followed by the ion implantation through the layer 3 in a base region 9. Diodes and resistors may be formed using the method.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762610208 DE2610208C3 (en) | 1976-03-11 | 1976-03-11 | Process for the production of semiconductor components |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1522258A true GB1522258A (en) | 1978-08-23 |
Family
ID=5972176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4935976A Expired GB1522258A (en) | 1976-03-11 | 1976-11-26 | Production of semiconductor components |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS52110576A (en) |
| DE (1) | DE2610208C3 (en) |
| FR (1) | FR2344127A1 (en) |
| GB (1) | GB1522258A (en) |
| IT (1) | IT1077652B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2042801B (en) * | 1979-02-13 | 1983-12-14 | Standard Telephones Cables Ltd | Contacting semicnductor devices |
-
1976
- 1976-03-11 DE DE19762610208 patent/DE2610208C3/en not_active Expired
- 1976-11-26 GB GB4935976A patent/GB1522258A/en not_active Expired
-
1977
- 1977-01-31 FR FR7702587A patent/FR2344127A1/en active Granted
- 1977-03-04 IT IT2091777A patent/IT1077652B/en active
- 1977-03-10 JP JP2656077A patent/JPS52110576A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2610208A1 (en) | 1977-09-15 |
| IT1077652B (en) | 1985-05-04 |
| DE2610208C3 (en) | 1979-06-13 |
| FR2344127A1 (en) | 1977-10-07 |
| FR2344127B1 (en) | 1982-11-12 |
| JPS52110576A (en) | 1977-09-16 |
| DE2610208B2 (en) | 1978-10-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |