GB1518988A - Integrated circuit - Google Patents
Integrated circuitInfo
- Publication number
- GB1518988A GB1518988A GB36624/75A GB3662475A GB1518988A GB 1518988 A GB1518988 A GB 1518988A GB 36624/75 A GB36624/75 A GB 36624/75A GB 3662475 A GB3662475 A GB 3662475A GB 1518988 A GB1518988 A GB 1518988A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- insulating layer
- insulating
- aperture
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 5
- 229910052782 aluminium Inorganic materials 0.000 abstract 4
- 239000004411 aluminium Substances 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 235000011054 acetic acid Nutrition 0.000 abstract 1
- 150000001243 acetic acids Chemical class 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 235000011007 phosphoric acid Nutrition 0.000 abstract 1
- 150000003016 phosphoric acids Chemical class 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Weting (AREA)
Abstract
1518988 Semiconductor device manufacture PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 5 Sept 1975 [10 Sept 1974] 36624/75 Heading H1K In the manufacture of a planar IC an insulating layer on a semiconductor wafer surface is first covered with an apertured auxiliary layer, a corresponding aperture formed in the insulating layer via the aperture in the auxiliary layer, a second insulating layer roughly as thick as the first provided over the auxiliary layer and apertures, and the auxiliary layer removed together with overlying portions of the second insulating layer to give a level unbroken insulating surface. In the described processes in which the semiconductor is silicon, both insulating layers silicon oxide, and the auxiliary layer aluminium, the first insulating layer is apertured by etching in buffered hydrofluoric acid and the aluminium layer removed by treatment with ferric chloride or a mixture of acetic and phosphoric acids. In one embodiment the second insulating layer contains dopant which is subsequently diffused into the water. In another a P-type layer is initially diffused into an N-type wafer via the aperture in the first insulating layer, two apertures formed in the second (undoped) insulating layer at opposite ends of the diffused layer, and aluminium finally deposited overall and anodized patternwise throughout its thickness to define together with the diffused layer two intersecting conductors 27b and 27c-21 (Fig. 7) isolated by the second insulating layer 24 where they cross. In a variant of this embodiment, after removal of the auxiliary layer an aperture is formed in the first insulating layer, aluminium deposited overall to contact the semiconductor via the aperture and covered with an oxide through apertures in which it may contact a further layer of metallization. Alternative materials suggested are germanium and gallium arsenide as semiconductor, alumina and silicon nitride for insulating layers, and tungsten and molybdenum, for which suitable etchants are specified, for the auxiliary layer.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7430623A FR2284981A1 (en) | 1974-09-10 | 1974-09-10 | PROCESS FOR OBTAINING AN INTEGRATED SEMICONDUCTOR CIRCUIT |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1518988A true GB1518988A (en) | 1978-07-26 |
Family
ID=9142928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB36624/75A Expired GB1518988A (en) | 1974-09-10 | 1975-09-05 | Integrated circuit |
Country Status (10)
| Country | Link |
|---|---|
| JP (1) | JPS5744017B2 (en) |
| AT (1) | AT359562B (en) |
| CA (1) | CA1035470A (en) |
| CH (1) | CH591163A5 (en) |
| DE (1) | DE2538264C3 (en) |
| FR (1) | FR2284981A1 (en) |
| GB (1) | GB1518988A (en) |
| IT (1) | IT1042339B (en) |
| NL (1) | NL7510427A (en) |
| SE (1) | SE415421B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2129614A (en) * | 1982-10-29 | 1984-05-16 | Western Electric Co | Method of delineating thin layers of material |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5496775A (en) * | 1978-01-17 | 1979-07-31 | Hitachi Ltd | Method of forming circuit |
| JPH053192A (en) * | 1991-10-25 | 1993-01-08 | Matsushita Electron Corp | Semiconductor integrated circuit |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3979768A (en) * | 1966-03-23 | 1976-09-07 | Hitachi, Ltd. | Semiconductor element having surface coating comprising silicon nitride and silicon oxide films |
| FR1536321A (en) * | 1966-06-30 | 1968-08-10 | Texas Instruments Inc | Ohmic contacts for semiconductor devices |
| FR1531852A (en) * | 1966-07-15 | 1968-07-05 | Itt | Method of masking the surface of a support |
| US3474310A (en) * | 1967-02-03 | 1969-10-21 | Hitachi Ltd | Semiconductor device having a sulfurtreated silicon compound thereon and a method of making the same |
| US3442012A (en) * | 1967-08-03 | 1969-05-06 | Teledyne Inc | Method of forming a flip-chip integrated circuit |
| DE2059116C3 (en) * | 1970-12-01 | 1974-11-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Method for manufacturing a semiconductor component |
| GB1363815A (en) * | 1971-12-06 | 1974-08-21 | Tektronix Inc | Semiconductor device and method of producing same |
| JPS4960870A (en) * | 1972-10-16 | 1974-06-13 |
-
1974
- 1974-09-10 FR FR7430623A patent/FR2284981A1/en active Granted
-
1975
- 1975-08-28 DE DE2538264A patent/DE2538264C3/en not_active Expired
- 1975-09-04 NL NL7510427A patent/NL7510427A/en not_active Application Discontinuation
- 1975-09-04 CA CA234,787A patent/CA1035470A/en not_active Expired
- 1975-09-05 IT IT26982/75A patent/IT1042339B/en active
- 1975-09-05 GB GB36624/75A patent/GB1518988A/en not_active Expired
- 1975-09-05 CH CH1153875A patent/CH591163A5/xx not_active IP Right Cessation
- 1975-09-06 JP JP50107586A patent/JPS5744017B2/ja not_active Expired
- 1975-09-08 SE SE7509970A patent/SE415421B/en unknown
- 1975-09-08 AT AT692075A patent/AT359562B/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2129614A (en) * | 1982-10-29 | 1984-05-16 | Western Electric Co | Method of delineating thin layers of material |
Also Published As
| Publication number | Publication date |
|---|---|
| CH591163A5 (en) | 1977-09-15 |
| NL7510427A (en) | 1976-03-12 |
| DE2538264A1 (en) | 1976-03-18 |
| ATA692075A (en) | 1980-04-15 |
| FR2284981B1 (en) | 1978-11-24 |
| JPS5153491A (en) | 1976-05-11 |
| IT1042339B (en) | 1980-01-30 |
| SE415421B (en) | 1980-09-29 |
| DE2538264B2 (en) | 1981-04-30 |
| CA1035470A (en) | 1978-07-25 |
| FR2284981A1 (en) | 1976-04-09 |
| AU8461075A (en) | 1977-03-17 |
| AT359562B (en) | 1980-11-25 |
| JPS5744017B2 (en) | 1982-09-18 |
| SE7509970L (en) | 1976-03-11 |
| DE2538264C3 (en) | 1982-01-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |