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GB1476313A - Growth of synthetic diamonds - Google Patents

Growth of synthetic diamonds

Info

Publication number
GB1476313A
GB1476313A GB2729373A GB2729373A GB1476313A GB 1476313 A GB1476313 A GB 1476313A GB 2729373 A GB2729373 A GB 2729373A GB 2729373 A GB2729373 A GB 2729373A GB 1476313 A GB1476313 A GB 1476313A
Authority
GB
United Kingdom
Prior art keywords
diamond
growth
ions
growing
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2729373A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NAT RES DEV
National Research Development Corp UK
Original Assignee
NAT RES DEV
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NAT RES DEV, National Research Development Corp UK filed Critical NAT RES DEV
Priority to GB2729373A priority Critical patent/GB1476313A/en
Priority to SU742033730A priority patent/SU1134119A3/en
Priority to CA201,890A priority patent/CA1026653A/en
Publication of GB1476313A publication Critical patent/GB1476313A/en
Priority to US05/878,862 priority patent/US4191735A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/26—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

1476313 Growing diamond crystals NATIONAL RESEARCH DEVELOPMENT CORP 29 May 1974 [7 June 1973] 27293/73 Heading B1S [Also in Division Cl] A method of growing a diamond crystal comprises bombarding the diamond with carbon ions of sufficient energy to penetrate the diamond crystal, and cause internal crystal growth, the temperature being such that the diamond crystal structure is maintained during growth. Preferred conditions are carbon ion energies of 1-100 keV and temperatures of at least 600‹C. Impurity ions such as nitrogen ions may be present in the carbon ion beam, to produce e.g. colours
GB2729373A 1973-06-07 1973-06-07 Growth of synthetic diamonds Expired GB1476313A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB2729373A GB1476313A (en) 1973-06-07 1973-06-07 Growth of synthetic diamonds
SU742033730A SU1134119A3 (en) 1973-06-07 1974-06-07 Method of growing diamond
CA201,890A CA1026653A (en) 1973-06-07 1974-06-07 Growth of synthetic diamonds
US05/878,862 US4191735A (en) 1973-06-07 1978-02-17 Growth of synthetic diamonds

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2729373A GB1476313A (en) 1973-06-07 1973-06-07 Growth of synthetic diamonds

Publications (1)

Publication Number Publication Date
GB1476313A true GB1476313A (en) 1977-06-10

Family

ID=10257233

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2729373A Expired GB1476313A (en) 1973-06-07 1973-06-07 Growth of synthetic diamonds

Country Status (3)

Country Link
CA (1) CA1026653A (en)
GB (1) GB1476313A (en)
SU (1) SU1134119A3 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221411A (en) * 1991-04-08 1993-06-22 North Carolina State University Method for synthesis and processing of continuous monocrystalline diamond thin films
GB2497660A (en) * 2011-12-16 2013-06-19 Element Six Ltd Single crystal CVD synthetic diamond material

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221411A (en) * 1991-04-08 1993-06-22 North Carolina State University Method for synthesis and processing of continuous monocrystalline diamond thin films
GB2497660A (en) * 2011-12-16 2013-06-19 Element Six Ltd Single crystal CVD synthetic diamond material
GB2497660B (en) * 2011-12-16 2014-08-06 Element Six Ltd Single crystal CVD synthetic diamond material
US9260797B2 (en) 2011-12-16 2016-02-16 Element Six Limited Single crystal CVD synthetic diamond material

Also Published As

Publication number Publication date
CA1026653A (en) 1978-02-21
SU1134119A3 (en) 1985-01-07

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee