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GB1471282A - Field effect semiconductor devices - Google Patents

Field effect semiconductor devices

Info

Publication number
GB1471282A
GB1471282A GB2802274A GB2802274A GB1471282A GB 1471282 A GB1471282 A GB 1471282A GB 2802274 A GB2802274 A GB 2802274A GB 2802274 A GB2802274 A GB 2802274A GB 1471282 A GB1471282 A GB 1471282A
Authority
GB
United Kingdom
Prior art keywords
channel
width
threshold voltage
length
zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2802274A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1471282A publication Critical patent/GB1471282A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)

Abstract

1471282 IGFET's INTERNATIONAL BUSINESS MACHINES CORP 25 June 1974 [28 July 1973] 28022/74 Heading H1K In an IGFET, which includes a source and a drain defining a channel therebetween, the length L of the channel, Fig. 4A, being the distance between the source and drain, and a gate electrode which overlies the channel and a region of the semi-conductor substrate alongside the channel, the width W of the channel, Fig. 4B, is made sufficiently small such that, in operation, it has a direct influence on the value of the threshold voltage of the transistor-a reduction in the channel width W producing an increase in the threshold voltage VT, as shown in Fig. 3B, in which d 2 /d 1 is the ratio of, respectively, the depletion layer depth in the region alongside the channel to that in the channel. Utilizing this effect with the known effect that a reduction in the channel length decreases the threshold voltage, then a device of much smaller channel area can be produced while maintaining a desired threshold voltage level. In addition field effect transistors can be formed having different threshold voltage values in the same semi-conductor substrate without needing any additional processing steps merely by choosing different channel widths for the devices. Although in the present arrangement the channel width W is fixed by the choice of threshold voltage and other design criteria determine the optimum channel length L, the impedance value of the FET which depends on the channel width to channel length ratio W/L can be varied by the arrangement shown in Figs. 4A and 4B. In this arrangement a number of FET's of narrow channel width W have common source and drain zones 24, 34, with the gate zones of length L and width W formed by thin zones 54 of insulating layer 44. A common gate electrode 64 is provided and the resulting overall transistor has a threshold voltage which is determined by the channel width W of an individual part-transistor and an impedance value which is determined by the effective resulting channel width W R which is equal to the sum of the individual channel widths W. The width of the channel may be defined by doped zones in the substrate on either side of the channel.
GB2802274A 1973-07-28 1974-06-25 Field effect semiconductor devices Expired GB1471282A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2338388A DE2338388C2 (en) 1973-07-28 1973-07-28 Field effect semiconductor device

Publications (1)

Publication Number Publication Date
GB1471282A true GB1471282A (en) 1977-04-21

Family

ID=5888242

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2802274A Expired GB1471282A (en) 1973-07-28 1974-06-25 Field effect semiconductor devices

Country Status (5)

Country Link
JP (1) JPS5419143B2 (en)
CA (1) CA1005930A (en)
DE (1) DE2338388C2 (en)
FR (1) FR2239017B1 (en)
GB (1) GB1471282A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE30917E (en) 1975-07-31 1982-04-27 Sony Corporation Two-phase charge transfer device image sensor

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368177A (en) * 1976-11-30 1978-06-17 Toshiba Corp Mos type field effect transistor
US4129880A (en) * 1977-07-01 1978-12-12 International Business Machines Incorporated Channel depletion boundary modulation magnetic field sensor
US4163986A (en) * 1978-05-03 1979-08-07 International Business Machines Corporation Twin channel Lorentz coupled depletion width modulation effect magnetic field sensor
JPS55118676A (en) * 1979-03-07 1980-09-11 Mitsubishi Electric Corp Semiconductor device
EP0225566A3 (en) * 1985-12-03 1989-07-26 Itt Industries, Inc. Permeable gate transistor
JP2609587B2 (en) * 1986-04-21 1997-05-14 株式会社日立製作所 Semiconductor device
US4937075A (en) * 1989-04-27 1990-06-26 Digital Equipment Corporation Method of making semiconductor chip having field effect transistors which have differing threshold voltages determined in a single masking step
JPH06204253A (en) * 1993-01-07 1994-07-22 Fujitsu Ltd Field-effect semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3374407A (en) * 1964-06-01 1968-03-19 Rca Corp Field-effect transistor with gate-insulator variations to achieve remote cutoff characteristic
US3417464A (en) * 1965-05-21 1968-12-24 Ibm Method for fabricating insulated-gate field-effect transistors
GB1145092A (en) * 1965-06-09 1969-03-12 Mullard Ltd Improvements in insulated gate field effect semiconductor devices
DE2044792A1 (en) * 1970-09-10 1972-03-23 Ibm Deutschland Field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE30917E (en) 1975-07-31 1982-04-27 Sony Corporation Two-phase charge transfer device image sensor

Also Published As

Publication number Publication date
JPS5040283A (en) 1975-04-12
FR2239017A1 (en) 1975-02-21
CA1005930A (en) 1977-02-22
JPS5419143B2 (en) 1979-07-12
DE2338388A1 (en) 1975-02-13
FR2239017B1 (en) 1976-06-25
DE2338388C2 (en) 1982-04-15

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee