[go: up one dir, main page]

GB1460090A - Semiconductor photoelectric generator - Google Patents

Semiconductor photoelectric generator

Info

Publication number
GB1460090A
GB1460090A GB4932574A GB4932574A GB1460090A GB 1460090 A GB1460090 A GB 1460090A GB 4932574 A GB4932574 A GB 4932574A GB 4932574 A GB4932574 A GB 4932574A GB 1460090 A GB1460090 A GB 1460090A
Authority
GB
United Kingdom
Prior art keywords
photo
cells
junctions
rectifying
isotype
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4932574A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bordina N M
Original Assignee
Bordina N M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bordina N M filed Critical Bordina N M
Priority to GB4932574A priority Critical patent/GB1460090A/en
Publication of GB1460090A publication Critical patent/GB1460090A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/10—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

1460090 Photo-cells N M BORDINA V V ZADDE A K ZAITSEVA A P LANDSMAN D S STREBKOV V I STRELTSOVA and V A UNISHKOV 14 Nov 1974 49325/74 Heading H1K A semi-conductor photo-electric generator comprises interconnected photo-cells 1, Fig. 1, with rectifying barriers 6 and isotype (PP + or NN +) junctions 2 adjacent alight-receiving surface 3, wherein the rectifying barrier 6 is located at a distance within the diffusion length of minority carriers from the surface 3. Leads 4, 8 are formed on opposite faces of the photo-cells 1, the lead 8 being solid or having a mesh structure to allow light absorption from both sides. The rectifying barrier 6 may be a PN junction or a Schottky barrier. Various embodiments are described in which the photo-cells have a prismatic shape and the rectifying and/or isotype junctions 6, 2 are formed adjacent a plurality of surfaces of the prism. In one embodiment, Fig. 9, the shape is a parallelepiped and the lead 8 forms a reflecting surface to increase the light gathering power of the photo-cell. A method of forming the generator comprises soldering together a stack of silicon plates with the junctions 6, 2 formed therein, cutting the stack into matrices, forming additional PN and isotype junctions as required, soldering the matrices into stacks, cutting the stacks into monolithic cellular structures, etching the corners of the photo-cells to separate the various junctions, filling the etched corners with insulation, and metallizing the structure.
GB4932574A 1974-11-14 1974-11-14 Semiconductor photoelectric generator Expired GB1460090A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB4932574A GB1460090A (en) 1974-11-14 1974-11-14 Semiconductor photoelectric generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4932574A GB1460090A (en) 1974-11-14 1974-11-14 Semiconductor photoelectric generator

Publications (1)

Publication Number Publication Date
GB1460090A true GB1460090A (en) 1976-12-31

Family

ID=10451968

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4932574A Expired GB1460090A (en) 1974-11-14 1974-11-14 Semiconductor photoelectric generator

Country Status (1)

Country Link
GB (1) GB1460090A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5286925A (en) * 1991-04-18 1994-02-15 Solvay (Societe Annonyme) Electrical conductor, process for manufacturing an electrical conductor and electrode for an electrolysis cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5286925A (en) * 1991-04-18 1994-02-15 Solvay (Societe Annonyme) Electrical conductor, process for manufacturing an electrical conductor and electrode for an electrolysis cell

Similar Documents

Publication Publication Date Title
US3948682A (en) Semiconductor photoelectric generator
US3422527A (en) Method of manufacture of high voltage solar cell
US4427839A (en) Faceted low absorptance solar cell
US5067985A (en) Back-contact vertical-junction solar cell and method
US3985579A (en) Rib and channel vertical multijunction solar cell
US5330584A (en) Solar cell
EP0084621B1 (en) Semiconductor signal conversion device using photon coupling
GB1514548A (en) Multi-layer semiconductor photovoltaic device
EP0369666A2 (en) Solar cell
EP0334330A2 (en) Opto-electric transducing element and method for producing the same
US3653971A (en) Semiconductor photoelectric generator
GB1529139A (en) Photovoltaic cell and a method of manufacturing such a cell
US4219368A (en) Semiconductor device having a number of series-arranged photosensitive cells
US4406913A (en) Solar cell with increased efficiency
FR2302593A1 (en) SOLAR CELL CONSTITUTED BY A STACK OF LAYERS OF ONE AND THE OTHER CONDUCTIVITY
CA2050435A1 (en) Photo-sensing device
KR850005164A (en) Semiconductor devices
GB1460090A (en) Semiconductor photoelectric generator
GB1466325A (en) Infra-red detector
EP0304048A3 (en) A planar type heterostructure avalanche photodiode
JPS57172778A (en) Solar battery
GB1487764A (en) Semiconductor devices
US3946417A (en) Minimizing cross-talk in L.E.D. arrays
JPS5257792A (en) Photoelectric converting element
JPS5629362A (en) Semiconductor dynamic memory

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee