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GB1452882A - Zener diode for integrated circuits - Google Patents

Zener diode for integrated circuits

Info

Publication number
GB1452882A
GB1452882A GB501475A GB501475A GB1452882A GB 1452882 A GB1452882 A GB 1452882A GB 501475 A GB501475 A GB 501475A GB 501475 A GB501475 A GB 501475A GB 1452882 A GB1452882 A GB 1452882A
Authority
GB
United Kingdom
Prior art keywords
region
less
zener diode
concentration
feb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB501475A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1452882A publication Critical patent/GB1452882A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

1452882 Semi-conductor devices RCA CORPORATION 6 Feb 1975 [11 Feb 1974] 5014/75 Heading H1K A Zener diode in an integrated structure has a first region 22 of one conductivity type comprising two diffused portions, a first portion 24 being of higher impurity concentration and being overlapped by less than the whole of its area by a second, shallower portion 26 of weaker impurity concentration. A second region 34 is of opposite type and forms a PN junction with the first region 22 with part of the junction within the zones of maximum concentration of the two regions. During diffusion of the portion 26 an area is masked to create an aperture in this portion (Fig. 4, not shown) so that less than all the portion 24 is overlapped. The diffusion is carried out in an oxidizing atmosphere and the resulting oxide layer segregates the impurities leaving a concentration in the overlap zone between the two portions less than that in the first portion 24 outside this zone. Contact is made to the N + region only over the shallow P portion 26 of the first P region.
GB501475A 1974-02-11 1975-02-06 Zener diode for integrated circuits Expired GB1452882A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44148274A 1974-02-11 1974-02-11

Publications (1)

Publication Number Publication Date
GB1452882A true GB1452882A (en) 1976-10-20

Family

ID=23753033

Family Applications (1)

Application Number Title Priority Date Filing Date
GB501475A Expired GB1452882A (en) 1974-02-11 1975-02-06 Zener diode for integrated circuits

Country Status (9)

Country Link
JP (1) JPS5324311B2 (en)
BE (1) BE825376A (en)
CA (1) CA1023058A (en)
DE (1) DE2504846A1 (en)
FR (1) FR2260873A1 (en)
GB (1) GB1452882A (en)
IN (1) IN144488B (en)
IT (1) IT1031592B (en)
SE (1) SE397605B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2134705A (en) * 1983-01-28 1984-08-15 Philips Electronic Associated Semiconductor devices
GB2163597A (en) * 1984-08-21 1986-02-26 Ates Componenti Elettron Improvements in or relating to manufacture of semiconductor devices of high breakdown voltage

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120971A (en) * 1974-03-09 1975-09-22
NL7907680A (en) * 1979-10-18 1981-04-22 Philips Nv ZENERDIODE.
DE3004680A1 (en) * 1980-02-08 1981-08-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Integrated circuit with zener diode and transistor - has buried layers and diode region formed simultaneously with transistor collector
DE3004681A1 (en) * 1980-02-08 1981-08-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Diode element for integrated circuit - achieves low noise and small differential impedance by using three specified zones
JPS56137072A (en) * 1980-03-29 1981-10-26 Aisin Seiki Energy saving molten metal retaining furnace
JPH0194895U (en) * 1987-12-16 1989-06-22
JP3799714B2 (en) * 1997-02-17 2006-07-19 ソニー株式会社 Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3735210A (en) * 1971-06-07 1973-05-22 Rca Corp Zener diode for monolithic integrated circuits

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2134705A (en) * 1983-01-28 1984-08-15 Philips Electronic Associated Semiconductor devices
GB2163597A (en) * 1984-08-21 1986-02-26 Ates Componenti Elettron Improvements in or relating to manufacture of semiconductor devices of high breakdown voltage

Also Published As

Publication number Publication date
DE2504846A1 (en) 1975-08-28
AU7792275A (en) 1976-08-05
FR2260873A1 (en) 1975-09-05
JPS50116186A (en) 1975-09-11
IN144488B (en) 1978-05-06
BE825376A (en) 1975-05-29
SE7501441L (en) 1975-08-12
CA1023058A (en) 1977-12-20
SE397605B (en) 1977-11-07
IT1031592B (en) 1979-05-10
JPS5324311B2 (en) 1978-07-20

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee