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GB1450293A - Semiconductor integrated circuits - Google Patents

Semiconductor integrated circuits

Info

Publication number
GB1450293A
GB1450293A GB2023574A GB2023574A GB1450293A GB 1450293 A GB1450293 A GB 1450293A GB 2023574 A GB2023574 A GB 2023574A GB 2023574 A GB2023574 A GB 2023574A GB 1450293 A GB1450293 A GB 1450293A
Authority
GB
United Kingdom
Prior art keywords
layer
islands
polycrystalline
integrated circuits
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2023574A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1450293A publication Critical patent/GB1450293A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/125—Polycrystalline passivation

Landscapes

  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)

Abstract

1450293 Integrated circuits SONY CORP 8 May 1974 [14 May 1973] 20235/74 Heading H1K In a semiconductor integrated circuit in which islands 7a, 7b of one conductivity type are isolated by regions 6 of opposite conductivity type, a polycrystalline semiconductor layer 14 having an impurity concentration lower than 7 x 10<SP>17</SP> atoms/cm<SP>3</SP>, is disposed over the whole of the junction J between the isolation regions 6 and the islands 7a, 7b. As shown the P<SP>+</SP> isolation region 6 isolates two transistors connected in the Darlington manner, and the polycrystalline silicon layer 14, e.g. of 2.5 x 10<SP>4</SP> ohm. cm. resistivity and 5,000 to 10,000 Š thick, also covers the emitter junctions formed in the islands. An insulating layer 15 of SiO 2 is formed over the whole of the polycrystalline layer 14 and a conductive lead 11 is formed on the SiO 2 layer 15. The desired resistivity of the polycrystalline silicon layer 14 may be acheived by having an arsenic impurity concentration of less than 7 x 10<SP>17</SP> atoms/cm<SP>3</SP>.
GB2023574A 1973-05-14 1974-05-08 Semiconductor integrated circuits Expired GB1450293A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5343273A JPS5314420B2 (en) 1973-05-14 1973-05-14

Publications (1)

Publication Number Publication Date
GB1450293A true GB1450293A (en) 1976-09-22

Family

ID=12942669

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2023574A Expired GB1450293A (en) 1973-05-14 1974-05-08 Semiconductor integrated circuits

Country Status (8)

Country Link
US (1) US3977019A (en)
JP (1) JPS5314420B2 (en)
CA (1) CA1001773A (en)
DE (1) DE2422912A1 (en)
FR (1) FR2230079B1 (en)
GB (1) GB1450293A (en)
IT (1) IT1012351B (en)
NL (1) NL7406422A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2841943A1 (en) * 1978-09-27 1980-04-10 Metzeler Schaum Gmbh METHOD FOR PRODUCING RECTANGULAR FOAM BLOCKS AND DEVICE FOR CARRYING OUT THE METHOD
GB2183907A (en) * 1985-11-27 1987-06-10 Raytheon Co Reducing radiation effects on integrated circuits
US4936928A (en) * 1985-11-27 1990-06-26 Raytheon Company Semiconductor device

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4176372A (en) * 1974-03-30 1979-11-27 Sony Corporation Semiconductor device having oxygen doped polycrystalline passivation layer
JPS5534582B2 (en) * 1974-06-24 1980-09-08
JPS5193874A (en) * 1975-02-15 1976-08-17 Handotaisochino seizohoho
JPS51126761A (en) * 1975-04-25 1976-11-05 Sony Corp Schottky barrier type semi-conductor unit
JPS51128269A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
US4148055A (en) * 1975-12-29 1979-04-03 U.S. Philips Corporation Integrated circuit having complementary bipolar transistors
US4160989A (en) * 1975-12-29 1979-07-10 U.S. Philips Corporation Integrated circuit having complementary bipolar transistors
JPS5383250U (en) * 1976-12-09 1978-07-10
JPS596514B2 (en) * 1977-03-08 1984-02-13 日本電信電話株式会社 Low crosstalk monolithic PNPN switch matrix using PN junction separation method
US4194934A (en) * 1977-05-23 1980-03-25 Varo Semiconductor, Inc. Method of passivating a semiconductor device utilizing dual polycrystalline layers
US4399449A (en) * 1980-11-17 1983-08-16 International Rectifier Corporation Composite metal and polysilicon field plate structure for high voltage semiconductor devices
US4344985A (en) * 1981-03-27 1982-08-17 Rca Corporation Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer
JPS5976466A (en) * 1982-10-25 1984-05-01 Mitsubishi Electric Corp Planar type semiconductor device
JPS6168187A (en) * 1984-09-11 1986-04-08 キヤノン株式会社 Washer
JPS61222172A (en) * 1985-03-15 1986-10-02 Sharp Corp MOSFET gate insulating film formation method
US4829689A (en) * 1986-06-25 1989-05-16 Merchandising Workshop, Inc. Article for display of information

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3725150A (en) * 1971-10-29 1973-04-03 Motorola Inc Process for making a fine geometry, self-aligned device structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2841943A1 (en) * 1978-09-27 1980-04-10 Metzeler Schaum Gmbh METHOD FOR PRODUCING RECTANGULAR FOAM BLOCKS AND DEVICE FOR CARRYING OUT THE METHOD
GB2183907A (en) * 1985-11-27 1987-06-10 Raytheon Co Reducing radiation effects on integrated circuits
DE3640438A1 (en) * 1985-11-27 1987-07-02 Raytheon Co SEMICONDUCTOR DEVICE
GB2183907B (en) * 1985-11-27 1989-10-04 Raytheon Co Semiconductor device
US4936928A (en) * 1985-11-27 1990-06-26 Raytheon Company Semiconductor device

Also Published As

Publication number Publication date
FR2230079A1 (en) 1974-12-13
JPS5314420B2 (en) 1978-05-17
IT1012351B (en) 1977-03-10
JPS503587A (en) 1975-01-14
NL7406422A (en) 1974-11-18
US3977019A (en) 1976-08-24
DE2422912A1 (en) 1974-12-05
FR2230079B1 (en) 1977-10-28
CA1001773A (en) 1976-12-14

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19940507