[go: up one dir, main page]

GB1442838A - Method of producing temperature compensated reference zener diodes and the devices thus obtained - Google Patents

Method of producing temperature compensated reference zener diodes and the devices thus obtained

Info

Publication number
GB1442838A
GB1442838A GB5173373A GB5173373A GB1442838A GB 1442838 A GB1442838 A GB 1442838A GB 5173373 A GB5173373 A GB 5173373A GB 5173373 A GB5173373 A GB 5173373A GB 1442838 A GB1442838 A GB 1442838A
Authority
GB
United Kingdom
Prior art keywords
wafer
mesa
mesas
layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5173373A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1442838A publication Critical patent/GB1442838A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C07F3/003—Compounds containing elements of Groups 2 or 12 of the Periodic Table without C-Metal linkages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1442838 Zener diodes THOMSON-CSF 7 Nov 1973 [7 Nov 1972] 51733/73 Heading H1K A temperature-compensated Zener diode comprises a wafer 11, of N-type silicon, two P<SP>+</SP>-type mesas 41, 42 on opposite sides of the wafer, mesa 42 having a further layer 44 of N<SP>+</SP>-type Si thereover. A P-type layer 43 of higher resistivity than mesa 42 may be interposed between mesa 42 and layer 44. The device is operated with two forward-biased junctions 51, 53 whose negative temperature coefficients compensate the positive coefficient of a reversebiased zener junction 52. The mesas and layer 44 are produced by epitaxial deposition, the mesas lying above windows photo-etched in silica layers 21, 22 on the wafer, the positions of the junctions 51 and 52 being determined by controlled rediffusion of boron dopant from the mesas into the wafer. To control the temperature coefficient of junction 51, a final gold doping into mesa 41 may be made. A plurality of devices may be formed in a single wafer, which is subsequently divided.
GB5173373A 1972-11-07 1973-11-07 Method of producing temperature compensated reference zener diodes and the devices thus obtained Expired GB1442838A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7239350A FR2205746B1 (en) 1972-11-07 1972-11-07

Publications (1)

Publication Number Publication Date
GB1442838A true GB1442838A (en) 1976-07-14

Family

ID=9106749

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5173373A Expired GB1442838A (en) 1972-11-07 1973-11-07 Method of producing temperature compensated reference zener diodes and the devices thus obtained

Country Status (5)

Country Link
BE (1) BE807001A (en)
DE (1) DE2355405A1 (en)
FR (1) FR2205746B1 (en)
GB (1) GB1442838A (en)
IT (1) IT996388B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5233214A (en) * 1989-09-14 1993-08-03 Robert Bosch Gmbh Controllable, temperature-compensated voltage limiter

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5378788A (en) * 1976-12-23 1978-07-12 Hitachi Ltd Temperature-compensation-type constant voltage element
FR2501914A1 (en) * 1981-03-13 1982-09-17 Thomson Csf 4 to 8 volt Zener diode - working in avalanche with a low current

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1522532A (en) * 1967-03-17 1968-04-26 Europ Des Semiconducteurs Soc Zener diode improvements

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5233214A (en) * 1989-09-14 1993-08-03 Robert Bosch Gmbh Controllable, temperature-compensated voltage limiter

Also Published As

Publication number Publication date
IT996388B (en) 1975-12-10
BE807001A (en) 1974-03-01
DE2355405A1 (en) 1974-05-16
FR2205746A1 (en) 1974-05-31
FR2205746B1 (en) 1976-04-30

Similar Documents

Publication Publication Date Title
GB1435590A (en) Process for the fabrication of a semiconductor structure
GB1221590A (en) Improvements in or relating to semiconductor devices
GB1012123A (en) Improvements in or relating to semiconductor devices
GB988902A (en) Semiconductor devices and methods of making same
US3380153A (en) Method of forming a semiconductor integrated circuit that includes a fast switching transistor
US3869322A (en) Automatic P-N junction formation during growth of a heterojunction
GB1312510A (en) Method of manufacturing a multi-layer semiconductor device
GB1191911A (en) Semiconductor Devices and Method of Making Same
GB1501483A (en) Semiconductor device
GB1442838A (en) Method of producing temperature compensated reference zener diodes and the devices thus obtained
GB1186945A (en) Improvements relating to Semiconductor Devices
GB1361303A (en) Manufacture of semiconductor devices
GB1388926A (en) Manufacture of silicon semiconductor devices
GB1262787A (en) Improvements in or relating to semiconductor arrangements
GB1165860A (en) Semiconductor Device with a Large Area PN-Junction
JPS55102263A (en) Semiconductor integrated circuit
GB1107068A (en) Controllable semiconductor rectifier element
GB1288029A (en)
FR2207361A1 (en) Epitaxial growth of doped AIII-BV semiconductors - using a soln contg dopant, with reducing temp
GB1165187A (en) Semiconductor Structure Employing a High Resistivity Gallium Arsenide Substrate
GB1060668A (en) Temperature compensated zener diode
GB1271896A (en) Semiconductor rectifying junction device
GB1134928A (en) Varactor diode
JPS57162339A (en) Manufacture of semiconductor device
JPS55145364A (en) Semiconductor integrated circuit device

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee