GB1413092A - Image pick-up devices - Google Patents
Image pick-up devicesInfo
- Publication number
- GB1413092A GB1413092A GB3178373A GB3178373A GB1413092A GB 1413092 A GB1413092 A GB 1413092A GB 3178373 A GB3178373 A GB 3178373A GB 3178373 A GB3178373 A GB 3178373A GB 1413092 A GB1413092 A GB 1413092A
- Authority
- GB
- United Kingdom
- Prior art keywords
- drain
- charge
- transfer
- storage
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004888 barrier function Effects 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 238000005036 potential barrier Methods 0.000 abstract 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/335—Channel regions of field-effect devices of charge-coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
1413092 Charge transfer image pick-up devices WESTERN ELECTRIC CO Inc 4 July 1973 [10 July 1972] 31783/73 Heading H1K In a charge transfer image pickup device including sites in a medium at which mobile charge carriers produced by an image can be integrated and stored, and a plurality of transfer electrodes insulatedly overlying the medium for transferring stored charges to an output, means are provided for establishing a drain adjacent each storage site and for establishing a surface potential between site and drain such that any excess mobile carriers at the site are transferred to the drain rather than to adjacent storage sites. In a typical area imaging device Fig. 1, based on a P-type silicon wafer, having an illuminated image area and a storage and readout area shielded from light the storage sites are located at the intersections of transfer electrodes in groups #1i and #2i and P-type channels 13 defined between potential barriers provided by P+-type finger regions 12. When sufficient charge is stored to raise the site potential to that of the barrier charge flows to an N + drain region 15 held at a fixed potential. Transfer of charges to the storage and readout area and hence to the output is as described in Specification 1,365,751. Alternative ways of providing the barrier are to increase the thickness of the oxide insulation over and adjacent the fingers of the drain region or to provide an additional fixed bias electrode on the insulation there from which the overlying transfer electrodes are insulated. In the line image pick-up device of Fig. 5 excess charges accumulated in the storage sites pass to N+ drain region 20 by overcoming the potential barrier provided by the voltage on electrode 22, which is less than that applied to electrode #2 to transfer stored charge to the readout area, or by a P + region in the same position. The drain may alternatively be constituted by an area underlying a suitably biased electrode and extending to an N+ region. The devices are produced by conventional processing.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US27033872A | 1972-07-10 | 1972-07-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1413092A true GB1413092A (en) | 1975-11-05 |
Family
ID=23030921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3178373A Expired GB1413092A (en) | 1972-07-10 | 1973-07-04 | Image pick-up devices |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5222495B2 (en) |
| BE (1) | BE802002A (en) |
| CA (1) | CA1106477A (en) |
| DE (1) | DE2334116C3 (en) |
| FR (1) | FR2197287B1 (en) |
| GB (1) | GB1413092A (en) |
| IT (1) | IT991964B (en) |
| NL (1) | NL165607C (en) |
| SE (1) | SE382148B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4733406A (en) * | 1981-09-17 | 1988-03-22 | Canon Kabushiki Kaisha | Image sensing charge coupled device |
| US4833515A (en) * | 1985-09-20 | 1989-05-23 | U.S. Philips Corp. | Imaging devices comprising photovoltaic detector elements |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49131525A (en) * | 1973-04-05 | 1974-12-17 | ||
| US3866067A (en) * | 1973-05-21 | 1975-02-11 | Fairchild Camera Instr Co | Charge coupled device with exposure and antiblooming control |
| JPS5140790A (en) * | 1974-10-04 | 1976-04-05 | Oki Electric Ind Co Ltd | |
| JPS5732547B2 (en) * | 1974-12-25 | 1982-07-12 | ||
| DE2813254C2 (en) * | 1978-03-28 | 1979-12-06 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | One-dimensional CCD sensor with overflow device |
| JPS60244064A (en) * | 1984-05-18 | 1985-12-03 | Nec Corp | Solid-state image pickup device |
| JPS60163876U (en) * | 1985-03-06 | 1985-10-31 | 富士通株式会社 | semiconductor imaging device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1566558A (en) * | 1968-03-20 | 1969-05-09 | ||
| IE34899B1 (en) * | 1970-02-16 | 1975-09-17 | Western Electric Co | Improvements in or relating to semiconductor devices |
| FR2101023B1 (en) * | 1970-08-07 | 1973-11-23 | Thomson Csf |
-
1973
- 1973-01-19 CA CA161,619A patent/CA1106477A/en not_active Expired
- 1973-07-02 SE SE7309285A patent/SE382148B/en unknown
- 1973-07-04 GB GB3178373A patent/GB1413092A/en not_active Expired
- 1973-07-04 NL NL7309340.A patent/NL165607C/en not_active IP Right Cessation
- 1973-07-05 DE DE2334116A patent/DE2334116C3/en not_active Expired
- 1973-07-05 IT IT51274/73A patent/IT991964B/en active
- 1973-07-05 FR FR7324749A patent/FR2197287B1/fr not_active Expired
- 1973-07-06 BE BE133191A patent/BE802002A/en not_active IP Right Cessation
- 1973-07-10 JP JP48077186A patent/JPS5222495B2/ja not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4733406A (en) * | 1981-09-17 | 1988-03-22 | Canon Kabushiki Kaisha | Image sensing charge coupled device |
| US4833515A (en) * | 1985-09-20 | 1989-05-23 | U.S. Philips Corp. | Imaging devices comprising photovoltaic detector elements |
Also Published As
| Publication number | Publication date |
|---|---|
| SE382148B (en) | 1976-01-12 |
| DE2334116C3 (en) | 1983-11-10 |
| DE2334116B2 (en) | 1977-06-30 |
| DE2334116A1 (en) | 1974-01-31 |
| FR2197287A1 (en) | 1974-03-22 |
| NL165607C (en) | 1981-04-15 |
| FR2197287B1 (en) | 1976-05-28 |
| NL165607B (en) | 1980-11-17 |
| JPS5222495B2 (en) | 1977-06-17 |
| CA1106477A (en) | 1981-08-04 |
| JPS4946625A (en) | 1974-05-04 |
| NL7309340A (en) | 1974-01-14 |
| IT991964B (en) | 1975-08-30 |
| BE802002A (en) | 1973-11-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1073551A (en) | Monolithic semiconductor apparatus adapted for sequential charge transfer | |
| US8299504B2 (en) | Image sensing device and method of | |
| US4155094A (en) | Solid-state imaging device | |
| US3660697A (en) | Monolithic semiconductor apparatus adapted for sequential charge transfer | |
| US3863065A (en) | Dynamic control of blooming in charge coupled, image-sensing arrays | |
| US3771149A (en) | Charge coupled optical scanner | |
| GB1356629A (en) | Charge coupled memory devices | |
| US5130774A (en) | Antiblooming structure for solid-state image sensor | |
| US4388532A (en) | Solid state image sensor with image sensing elements having charge coupled photocapacitors and a floating gate amplifier | |
| GB1394520A (en) | Charge coupled device area imaging array | |
| GB1340619A (en) | Information storage devices | |
| GB1413092A (en) | Image pick-up devices | |
| GB1495453A (en) | Charged coupled devices | |
| US5235196A (en) | Transfer region design for charge-coupled device image sensor | |
| JPH04500438A (en) | CCD imager with double gate anti-fog structure | |
| GB1377521A (en) | Charge coupled circuits | |
| US3697786A (en) | Capacitively driven charge transfer devices | |
| US4684968A (en) | JFET imager having light sensing inversion layer induced by insulator charge | |
| US5892251A (en) | Apparatus for transferring electric charges | |
| US4814844A (en) | Split two-phase CCD clocking gate apparatus | |
| KR930007532B1 (en) | Ccd imager of three dimension using soi structure and method for fabricating thereof | |
| GB1365751A (en) | Image pick up devices | |
| JPH055179B2 (en) | ||
| US4321614A (en) | Radiant energy sensor with blooming control | |
| US6366322B1 (en) | Horizontal charge coupled device of CCD image sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19930703 |