GB1395337A - Amplifiers - Google Patents
AmplifiersInfo
- Publication number
- GB1395337A GB1395337A GB1580472A GB1580472A GB1395337A GB 1395337 A GB1395337 A GB 1395337A GB 1580472 A GB1580472 A GB 1580472A GB 1580472 A GB1580472 A GB 1580472A GB 1395337 A GB1395337 A GB 1395337A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistors
- resistors
- april
- conduct
- respective pairs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
- H03F3/3081—Duplicated single-ended push-pull arrangements, i.e. bridge circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3217—Modifications of amplifiers to reduce non-linear distortion in single ended push-pull amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Abstract
1395337 Transistor amplifier circuits GOLDRING Ltd 3 April 1973 [6 April 1972] 15804/72 Heading H3T In an audio frequency amplifier the emitters and collectors of two pairs of complementary transistors Tr1 Tr2 and Tr3, Tr4 respectively are connected as a bridge with the series connected transistors of the respective pairs disposed in the common emitter mode, the load being connected between the points of interconnection of the complementary transistors of the respective pairs, and the transistors are biased to conduct at all times and conduct a quiescent current which is a very small proportion of the current flowing in them when they are driven to peak power. In the embodiment a suitable bias is derived from resistors R1-R3 and R6-R8 respectively while emitter circuit resistors R4, R5, R9, R10 render the arrangement insensitive to variations in the characteristics of the transistors. Push -pull inputs are ap - plied over capacitors C1, C2 and C3, C4, while the base biases are stabilized by means of Zener diode D1 in conjunction with resistors R11, R12.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1580472A GB1395337A (en) | 1972-04-06 | 1972-04-06 | Amplifiers |
FR7311158A FR2178912A1 (en) | 1972-04-06 | 1973-03-28 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1580472A GB1395337A (en) | 1972-04-06 | 1972-04-06 | Amplifiers |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1395337A true GB1395337A (en) | 1975-05-21 |
Family
ID=10065772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1580472A Expired GB1395337A (en) | 1972-04-06 | 1972-04-06 | Amplifiers |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1395337A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4100502A (en) * | 1975-09-03 | 1978-07-11 | Hitachi, Ltd. | Class B FET amplifier circuit |
GB2374220A (en) * | 2001-01-17 | 2002-10-09 | Jeffrey Peter Macaulay | Simple and efficient class A amplifier output stage |
WO2010071876A1 (en) * | 2008-12-19 | 2010-06-24 | Qualcomm Incorporated | Class ab amplifier with resistive level-shifting circuitry |
CN113556093A (en) * | 2021-06-01 | 2021-10-26 | 惠州三华工业有限公司 | High-voltage amplifier and multi-path adjustable high-voltage output power circuit |
-
1972
- 1972-04-06 GB GB1580472A patent/GB1395337A/en not_active Expired
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4100502A (en) * | 1975-09-03 | 1978-07-11 | Hitachi, Ltd. | Class B FET amplifier circuit |
USRE31749E (en) * | 1975-09-03 | 1984-11-27 | Hitachi, Ltd. | Class B FET amplifier circuit |
GB2374220A (en) * | 2001-01-17 | 2002-10-09 | Jeffrey Peter Macaulay | Simple and efficient class A amplifier output stage |
GB2374220B (en) * | 2001-01-17 | 2004-08-04 | Jeffrey Peter Macaulay | Simple efficient class a output stage |
WO2010071876A1 (en) * | 2008-12-19 | 2010-06-24 | Qualcomm Incorporated | Class ab amplifier with resistive level-shifting circuitry |
CN102257727A (en) * | 2008-12-19 | 2011-11-23 | 高通股份有限公司 | Class ab amplifier with resistive level-shifting circuitry |
US8536947B2 (en) | 2008-12-19 | 2013-09-17 | Qualcomm Incorporated | Class AB amplifier with resistive level-shifting circuitry |
CN113556093A (en) * | 2021-06-01 | 2021-10-26 | 惠州三华工业有限公司 | High-voltage amplifier and multi-path adjustable high-voltage output power circuit |
CN113556093B (en) * | 2021-06-01 | 2024-03-22 | 惠州三华工业有限公司 | High-voltage amplifier and multi-path adjustable high-voltage output power supply circuit |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |