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GB1393914A - Photoelectric transducer element - Google Patents

Photoelectric transducer element

Info

Publication number
GB1393914A
GB1393914A GB5155272A GB5155272A GB1393914A GB 1393914 A GB1393914 A GB 1393914A GB 5155272 A GB5155272 A GB 5155272A GB 5155272 A GB5155272 A GB 5155272A GB 1393914 A GB1393914 A GB 1393914A
Authority
GB
United Kingdom
Prior art keywords
film
nov
photo
transparent conductive
specified values
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5155272A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP46089622A external-priority patent/JPS5037513B2/ja
Priority claimed from JP47003265A external-priority patent/JPS5120242B2/ja
Priority claimed from JP47096428A external-priority patent/JPS524404B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1393914A publication Critical patent/GB1393914A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)

Abstract

1393914 Photo-electric devices MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 8 Nov 1972 [9 Nov 1971 29 Dec 1971 25 Sept 1972] 51552/72 Heading H1K A photo-electric device such as the target of an image pick-up tube includes a transparent conductive film 2, a photosensitive film 4 of Zn y Cd 1-y Te and an intermediate film 3 therebetween of ZnS x Se 1-x , which has a high energy band gap than the material of the photosensitive film 4. The presence of the film 3 improves the crystal quality of the surface of the film 4 from which light enters, and thereby reduces the surface state concentration. Various specified values of x and y between 0 and 1 inclusive are disclosed. Spectral sensitivity may be extended at the long wavelength end by the inclusion of In in the photosensitive film 4, either as a single dopant in an evaporation source for the film 4 or in the solid solution with various specified values of z. The transparent conductive film 2 may be of In 2 O 3 or SnO 2 on a glass substrate 1.
GB5155272A 1971-11-09 1972-11-08 Photoelectric transducer element Expired GB1393914A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP46089622A JPS5037513B2 (en) 1971-11-09 1971-11-09
JP47003265A JPS5120242B2 (en) 1971-12-29 1971-12-29
JP47096428A JPS524404B2 (en) 1972-09-25 1972-09-25

Publications (1)

Publication Number Publication Date
GB1393914A true GB1393914A (en) 1975-05-14

Family

ID=27275729

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5155272A Expired GB1393914A (en) 1971-11-09 1972-11-08 Photoelectric transducer element

Country Status (9)

Country Link
US (1) US3858074A (en)
AU (1) AU444944B2 (en)
BE (1) BE791077A (en)
CA (1) CA976265A (en)
DE (1) DE2254605C3 (en)
FR (1) FR2159364B1 (en)
GB (1) GB1393914A (en)
IT (1) IT984638B (en)
NL (1) NL159237B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3985918A (en) * 1972-10-12 1976-10-12 Matsushita Electric Industrial Co., Ltd. Method for manufacturing a target for an image pickup tube
CA1024734A (en) * 1973-03-30 1978-01-24 Yukimasa Kuramoto Photoconductor element
DE2436990A1 (en) * 1974-08-01 1976-02-12 Bosch Gmbh Robert PHOTO LEADER TARGET FOR TELEVISION EARNINGS WITH BLOCKING CONTACTS
US4589192A (en) * 1984-11-02 1986-05-20 The United States Of America As Represented By The Secretary Of The Army Hybrid epitaxial growth process

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL252729A (en) * 1959-06-18
US3287611A (en) * 1961-08-17 1966-11-22 Gen Motors Corp Controlled conducting region geometry in semiconductor devices
US3268764A (en) * 1963-01-09 1966-08-23 Westinghouse Electric Corp Radiation sensitive device
US3405298A (en) * 1965-03-04 1968-10-08 Rca Corp Photoconductive device having a target including a selenium blocking layer
US3346755A (en) * 1966-03-31 1967-10-10 Rca Corp Dark current reduction in photoconductive target by barrier junction between opposite conductivity type materials
US3571646A (en) * 1967-07-17 1971-03-23 Tokyo Shibaura Electric Co Photoconductive target with n-type layer of cadmium selenide including cadmium chloride and cuprous chloride
JPS5027326B1 (en) * 1970-04-22 1975-09-06

Also Published As

Publication number Publication date
BE791077A (en) 1973-03-01
AU4859272A (en) 1974-02-07
FR2159364A1 (en) 1973-06-22
NL159237B (en) 1979-01-15
DE2254605A1 (en) 1973-05-24
FR2159364B1 (en) 1977-07-29
AU444944B2 (en) 1974-02-07
CA976265A (en) 1975-10-14
DE2254605B2 (en) 1981-06-19
US3858074A (en) 1974-12-31
DE2254605C3 (en) 1982-04-15
IT984638B (en) 1974-11-20
NL7215094A (en) 1973-05-11

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PE20 Patent expired after termination of 20 years