GB1387166A - Electrically conductive layers upon high-ohmic substrates - Google Patents
Electrically conductive layers upon high-ohmic substratesInfo
- Publication number
- GB1387166A GB1387166A GB4281072A GB4281072A GB1387166A GB 1387166 A GB1387166 A GB 1387166A GB 4281072 A GB4281072 A GB 4281072A GB 4281072 A GB4281072 A GB 4281072A GB 1387166 A GB1387166 A GB 1387166A
- Authority
- GB
- United Kingdom
- Prior art keywords
- particles
- substrate
- islands
- low energy
- few
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title abstract 7
- 239000002245 particle Substances 0.000 abstract 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Chemical class 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical class [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical class [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004855 amber Substances 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical class [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 230000007935 neutral effect Effects 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 238000001179 sorption measurement Methods 0.000 abstract 1
- 229920003002 synthetic resin Polymers 0.000 abstract 1
- 239000000057 synthetic resin Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
- H01C17/2404—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by charged particle impact, e.g. by electron or ion beam milling, sputtering, plasma etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49099—Coating resistive material on a base
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Physical Vapour Deposition (AREA)
- Thermistors And Varistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19712146662 DE2146662C3 (de) | 1971-09-17 | Verfahren zur Herstellung einer elektrisch leitfähigen Schicht |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1387166A true GB1387166A (en) | 1975-03-12 |
Family
ID=5819937
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4281072A Expired GB1387166A (en) | 1971-09-17 | 1972-09-15 | Electrically conductive layers upon high-ohmic substrates |
Country Status (12)
Country | Link |
---|---|
US (1) | US3818413A (de) |
JP (1) | JPS4839180A (de) |
AT (1) | AT321411B (de) |
BE (1) | BE788894A (de) |
CA (1) | CA968864A (de) |
CH (1) | CH566063A5 (de) |
FR (1) | FR2152942B1 (de) |
GB (1) | GB1387166A (de) |
IT (1) | IT967539B (de) |
LU (1) | LU66097A1 (de) |
NL (1) | NL7212362A (de) |
SE (1) | SE381530B (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3898607A (en) * | 1974-02-28 | 1975-08-05 | Motorola Inc | High value vertical resistors by ion implantation and method for making same |
US4318072A (en) * | 1979-09-04 | 1982-03-02 | Vishay Intertechnology, Inc. | Precision resistor with improved temperature characteristics |
DE3138960A1 (de) * | 1981-09-30 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur erzeugung elektrisch leitender schichten |
JPS59162580A (ja) * | 1983-03-08 | 1984-09-13 | Fuji Photo Film Co Ltd | 電子写真装置用プロセスヘツド |
US6373118B1 (en) * | 1999-08-11 | 2002-04-16 | Lewyn Consulting, Inc. | High-value integrated circuit resistor |
CN110824137B (zh) * | 2019-10-10 | 2022-03-11 | 中国建筑材料科学研究总院有限公司 | 低辐射玻璃中银膜在衬底上结晶有序性的预测方法及装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2999339A (en) * | 1956-12-07 | 1961-09-12 | Bansch & Lomb Inc | Method of providing an electrically conductive surface |
US3287161A (en) * | 1962-10-01 | 1966-11-22 | Xerox Corp | Method for forming a thin film resistor |
US3380156A (en) * | 1965-11-15 | 1968-04-30 | Trw Inc | Method of fabricating thin film resistors |
US3562022A (en) * | 1967-12-26 | 1971-02-09 | Hughes Aircraft Co | Method of doping semiconductor bodies by indirection implantation |
US3585088A (en) * | 1968-10-18 | 1971-06-15 | Ibm | Methods of producing single crystals on supporting substrates |
-
0
- BE BE788894D patent/BE788894A/xx unknown
-
1972
- 1972-08-10 CH CH1181272A patent/CH566063A5/xx not_active IP Right Cessation
- 1972-08-10 AT AT693072A patent/AT321411B/de not_active IP Right Cessation
- 1972-09-01 US US00285933A patent/US3818413A/en not_active Expired - Lifetime
- 1972-09-12 NL NL7212362A patent/NL7212362A/xx not_active Application Discontinuation
- 1972-09-14 FR FR7232531A patent/FR2152942B1/fr not_active Expired
- 1972-09-14 JP JP47092747A patent/JPS4839180A/ja active Pending
- 1972-09-15 IT IT29257/72A patent/IT967539B/it active
- 1972-09-15 GB GB4281072A patent/GB1387166A/en not_active Expired
- 1972-09-15 CA CA151,799A patent/CA968864A/en not_active Expired
- 1972-09-15 LU LU66097A patent/LU66097A1/xx unknown
- 1972-09-15 SE SE7211940A patent/SE381530B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
AT321411B (de) | 1975-03-25 |
BE788894A (fr) | 1973-01-02 |
LU66097A1 (de) | 1973-01-17 |
CA968864A (en) | 1975-06-03 |
CH566063A5 (de) | 1975-08-29 |
DE2146662B2 (de) | 1976-04-08 |
US3818413A (en) | 1974-06-18 |
DE2146662A1 (de) | 1973-03-22 |
SE381530B (sv) | 1975-12-08 |
IT967539B (it) | 1974-03-11 |
NL7212362A (de) | 1973-03-20 |
JPS4839180A (de) | 1973-06-08 |
FR2152942A1 (de) | 1973-04-27 |
FR2152942B1 (de) | 1976-08-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |