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GB1379879A - Data storage apparatus - Google Patents

Data storage apparatus

Info

Publication number
GB1379879A
GB1379879A GB4575373A GB4575373A GB1379879A GB 1379879 A GB1379879 A GB 1379879A GB 4575373 A GB4575373 A GB 4575373A GB 4575373 A GB4575373 A GB 4575373A GB 1379879 A GB1379879 A GB 1379879A
Authority
GB
United Kingdom
Prior art keywords
discharged
line
current flow
charged
inversely
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4575373A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1379879A publication Critical patent/GB1379879A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)

Abstract

1379879 Semi-conductor data storage INTERNATIONAL BUSINESS MACHINES CORP 1 Oct 1973 [1 Nov 1972] 45753/73 Heading H3T A storage cell consists of a charge storage device C12 and a bipolar transistor 11 in series, with a direct connection excluding any intervening circuit components between the base and a word line 16.1. C12 is discharged for a 1, and charged to about + 3 v. for a 0. To read out, T11 is made to conduct inversely by lines 14.1, 16.1, and if current flows to charge C12 meaning that it was initially discharged (1), this current flow is detected in line 14.1 at 15 to indicate the stored 1. A separate sense line (Fig. 4, not shown) may replace the earth connection to C12 (C47) in order to sense this current flow. After reading, C12 is thus left charged to about + 3 v. To write (or rewrite erased) data, T11 conducts normally, and C12 is discharged or not in accordance with a 1 or 0 level on bit line 14.1. The transistor may be connected inversely, Fig. 3 (not shown).
GB4575373A 1972-11-01 1973-10-01 Data storage apparatus Expired GB1379879A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US30296372A 1972-11-01 1972-11-01

Publications (1)

Publication Number Publication Date
GB1379879A true GB1379879A (en) 1975-01-08

Family

ID=23169994

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4575373A Expired GB1379879A (en) 1972-11-01 1973-10-01 Data storage apparatus

Country Status (6)

Country Link
JP (1) JPS546178B2 (en)
CA (1) CA1101992A (en)
DE (1) DE2348065C3 (en)
FR (1) FR2204849B1 (en)
GB (1) GB1379879A (en)
IT (1) IT993090B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979734A (en) * 1975-06-16 1976-09-07 International Business Machines Corporation Multiple element charge storage memory cell
JPH0420374U (en) * 1990-06-13 1992-02-20

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3355720A (en) * 1964-03-05 1967-11-28 Rca Corp Memory using charge storage diodes
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3614753A (en) * 1969-11-10 1971-10-19 Shell Oil Co Single-rail solid-state memory with capacitive storage
US3729719A (en) * 1970-11-27 1973-04-24 Ibm Stored charge storage cell using a non latching scr type device
GB1330155A (en) * 1970-12-17 1973-09-12 Ferranti Ltd Semiconductor information storage devices

Also Published As

Publication number Publication date
JPS546178B2 (en) 1979-03-26
IT993090B (en) 1975-09-30
FR2204849B1 (en) 1976-06-18
DE2348065C3 (en) 1982-03-18
DE2348065B2 (en) 1981-07-09
JPS4979133A (en) 1974-07-31
DE2348065A1 (en) 1974-05-09
CA1101992A (en) 1981-05-26
FR2204849A1 (en) 1974-05-24

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee