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GB1367325A - Negative resistance semiconductor element - Google Patents

Negative resistance semiconductor element

Info

Publication number
GB1367325A
GB1367325A GB4508071A GB4508071A GB1367325A GB 1367325 A GB1367325 A GB 1367325A GB 4508071 A GB4508071 A GB 4508071A GB 4508071 A GB4508071 A GB 4508071A GB 1367325 A GB1367325 A GB 1367325A
Authority
GB
United Kingdom
Prior art keywords
semi
thyristor
gate
trapping
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4508071A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1367325A publication Critical patent/GB1367325A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Thyristors (AREA)
  • Semiconductor Memories (AREA)

Abstract

1367325 Semi-conductor devices MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 28 Sept 1971 [9 Oct 1970] 45080/71 Heading H1K A thyristor is provided with a gate electrode 8 capacitively coupled to the semi-conductor body through an insulating layer 7 which contains charge trapping centres, whereby an input gate signal applied to the gate electrode 8 is memorized due to the influence of charges injected into the layer 7 and trapped therein in the presence of the input signal on the subsequent electrical characteristics of the thyristor in the absence of the input signal. The Si device shown includes B-diffused regions 2, 3 in an N- type substrate 1, and a P-diffused region 5 in the region 3. The SiO 2 gate insulation 7 contains Au diffused therein to provide the trapping centres, alternative impurities being Cu, Na, Fe and Ni. Lattice defects generated by irradiation or by controlling the growth conditions of the layer 7 may also provide the trapping centres. Al electrodes 4, 6, 8 complete the device. A GaAs light-emitting memory thyristor employing the same charge-trapping principle is also described. This device comprises P- and N- type layers formed by liquid growth techniques and has two similar capacitive gate electrodes situated in recesses in the semi-conductor body so as to span the thickness of one of the intermediate layers of the device. GaP, Ge, GaPAs, InAs and CdS are also mentioned. Reference has been directed by the Comptroller to Specification 1,055,682.
GB4508071A 1970-10-09 1971-09-28 Negative resistance semiconductor element Expired GB1367325A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45089129A JPS509156B1 (en) 1970-10-09 1970-10-09

Publications (1)

Publication Number Publication Date
GB1367325A true GB1367325A (en) 1974-09-18

Family

ID=13962261

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4508071A Expired GB1367325A (en) 1970-10-09 1971-09-28 Negative resistance semiconductor element

Country Status (5)

Country Link
JP (1) JPS509156B1 (en)
CA (1) CA924420A (en)
FR (1) FR2110326B1 (en)
GB (1) GB1367325A (en)
NL (1) NL7113825A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364073A (en) 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
US4941030A (en) * 1985-02-05 1990-07-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
EP1743339A2 (en) * 2004-05-06 2007-01-17 Micron Technology, Inc. Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6229161B1 (en) * 1998-06-05 2001-05-08 Stanford University Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches
US6690038B1 (en) 1999-06-05 2004-02-10 T-Ram, Inc. Thyristor-based device over substrate surface
US6727528B1 (en) 2001-03-22 2004-04-27 T-Ram, Inc. Thyristor-based device including trench dielectric isolation for thyristor-body regions
US6804162B1 (en) 2001-04-05 2004-10-12 T-Ram, Inc. Read-modify-write memory using read-or-write banks
US6583452B1 (en) 2001-12-17 2003-06-24 T-Ram, Inc. Thyristor-based device having extended capacitive coupling
US6832300B2 (en) 2002-03-20 2004-12-14 Hewlett-Packard Development Company, L.P. Methods and apparatus for control of asynchronous cache
US6965129B1 (en) 2002-11-06 2005-11-15 T-Ram, Inc. Thyristor-based device having dual control ports

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364073A (en) 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
US4941030A (en) * 1985-02-05 1990-07-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
EP1743339A2 (en) * 2004-05-06 2007-01-17 Micron Technology, Inc. Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer
EP1743339A4 (en) * 2004-05-06 2007-08-01 Micron Technology Inc SILICON ON NON-VOLATILE MEMORY IN READING AND INSULATING WRITING COMPRISING A SIDE THYRISTOR AND A TRAPPING LAYER

Also Published As

Publication number Publication date
CA924420A (en) 1973-04-10
DE2149761B2 (en) 1976-08-05
DE2149761A1 (en) 1972-04-13
FR2110326B1 (en) 1977-04-22
NL7113825A (en) 1972-04-11
AU3395971A (en) 1973-04-05
JPS509156B1 (en) 1975-04-10
FR2110326A1 (en) 1972-06-02

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee