GB1365930A - Electrical superconductive device - Google Patents
Electrical superconductive deviceInfo
- Publication number
- GB1365930A GB1365930A GB4550171A GB4550171A GB1365930A GB 1365930 A GB1365930 A GB 1365930A GB 4550171 A GB4550171 A GB 4550171A GB 4550171 A GB4550171 A GB 4550171A GB 1365930 A GB1365930 A GB 1365930A
- Authority
- GB
- United Kingdom
- Prior art keywords
- lead
- substrate
- overlap
- area
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000002887 superconductor Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 229910000464 lead oxide Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 230000005641 tunneling Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/06—Thin magnetic films, e.g. of one-domain structure characterised by the coupling or physical contact with connecting or interacting conductors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
1365930 Vapour depositing super-conductors INTERNATIONAL BUSINESS MACHINES CORP 4 Oct 1971 [31 Dec 1970] 45501/71 Heading C7F [Also in Division H1] In a super-conductor device formation of hillocks, during manaufacture or use, on a superconducting metal film carrying a thin insulating layer and deposited on an insulating substrate is reduced by disposing a layer of material providing a low diffusivity interface for the component atoms of the film on the film or between it and the substrate. Exemplary film materials are silver for use with tin or lead layers, and gold for use with lead. A device of the tunneling type comprises an aligned but overlapping or an intersecting pair of 2000-20000 thick lead strips vacuum deposited on a quartz, sapphire, glass, or oxidized silicon substrate and spaced in the area or overlap by a 2-50A layer of lead oxide. Layers of gold 100-300 thick are disposed at the area of overlap on top of the upper lead strip and between the lower strip and the substrate and an insulated control conductor may be disposed over the area of overlap. The physical characteristics required of the hillock inhibiting material are discussed.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10324270A | 1970-12-31 | 1970-12-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1365930A true GB1365930A (en) | 1974-09-04 |
Family
ID=22294128
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4550171A Expired GB1365930A (en) | 1970-12-31 | 1971-10-04 | Electrical superconductive device |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE2163250B2 (en) |
FR (1) | FR2120782A5 (en) |
GB (1) | GB1365930A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2213838A (en) * | 1987-12-23 | 1989-08-23 | Plessey Co Plc | Environmental protection of superconducting thin films |
GB2213839A (en) * | 1987-12-23 | 1989-08-23 | Plessey Co Plc | Production of orientated polycrystalline y1ba2cu3o7-8 thin film by deposition onto textured, polycrystalline surfaces |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3128982C2 (en) * | 1981-07-22 | 1985-12-12 | Siemens AG, 1000 Berlin und 8000 München | Process for the production of at least one Josephson tunnel element |
DE3129000C2 (en) * | 1981-07-22 | 1985-05-09 | Siemens AG, 1000 Berlin und 8000 München | Method for manufacturing a Josephson circuit with Josephson tunnel elements |
-
1971
- 1971-10-04 GB GB4550171A patent/GB1365930A/en not_active Expired
- 1971-12-09 FR FR7144973A patent/FR2120782A5/fr not_active Expired
- 1971-12-20 DE DE2163250A patent/DE2163250B2/en not_active Withdrawn
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2213838A (en) * | 1987-12-23 | 1989-08-23 | Plessey Co Plc | Environmental protection of superconducting thin films |
GB2213839A (en) * | 1987-12-23 | 1989-08-23 | Plessey Co Plc | Production of orientated polycrystalline y1ba2cu3o7-8 thin film by deposition onto textured, polycrystalline surfaces |
GB2213839B (en) * | 1987-12-23 | 1992-06-17 | Plessey Co Plc | Semiconducting thin films |
Also Published As
Publication number | Publication date |
---|---|
DE2163250B2 (en) | 1979-08-23 |
DE2163250A1 (en) | 1972-07-13 |
FR2120782A5 (en) | 1972-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1384785A (en) | Semiconductor device connections | |
GB1037519A (en) | Electrical circuits | |
JPS6436077A (en) | Semiconductor device | |
GB889729A (en) | Improvements in and relating to thin film superconductors | |
GB1447604A (en) | Ferroelectric memory device | |
US3728590A (en) | Charge coupled devices with continuous resistor electrode | |
GB1321034A (en) | Method for making an intermetallic contact to a semiconductor device | |
GB1021359A (en) | Improved electrical connection to a semiconductor body | |
GB1304269A (en) | ||
GB1485655A (en) | Superconductive devices | |
SE7608839L (en) | SEMICONDUCTOR DEVICE | |
JPS6431475A (en) | Superconducting device and forming method thereof | |
GB1244011A (en) | Superconductive barrier devices | |
GB1365930A (en) | Electrical superconductive device | |
GB1377564A (en) | Electronic components having ionic stability | |
US5179426A (en) | Josephson device | |
GB1333816A (en) | Superconductive tunnelling device | |
GB1283690A (en) | Superconductive tunneling device | |
GB1400040A (en) | Field effect transistor having two gates for functioning at extremely high frequencies | |
GB1243357A (en) | Superconductive tunnel junction device | |
EP0124960A3 (en) | Semiconductor devices comprising silicides | |
GB1225399A (en) | ||
GB1269130A (en) | Improvements relating to ohmic contacts for semiconductor devices | |
GB1360100A (en) | Superconductive tunnelling device | |
GB1351617A (en) | Photo-electrical transducer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |