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GB1327836A - Process for forming a ternary material on a substrate - Google Patents

Process for forming a ternary material on a substrate

Info

Publication number
GB1327836A
GB1327836A GB2046771A GB2046771A GB1327836A GB 1327836 A GB1327836 A GB 1327836A GB 2046771 A GB2046771 A GB 2046771A GB 2046771 A GB2046771 A GB 2046771A GB 1327836 A GB1327836 A GB 1327836A
Authority
GB
United Kingdom
Prior art keywords
zone
temperature
reactants
substrate
ternary material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2046771A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP877870A external-priority patent/JPS4937359B1/ja
Priority claimed from JP12482370A external-priority patent/JPS4816437B1/ja
Priority claimed from JP12469970A external-priority patent/JPS5014640B1/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1327836A publication Critical patent/GB1327836A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

1327836 Ternary compounds MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 19 April 1971 [30 Jan 1970 29 Dec 1979 (3)] 20467/71 Heading C1A A layer of ternary material AB (1-x) C x wherein A is an element of column III B of the Periodic Table, B and C are selected from column V B of the Periodic Table and are varied in proportion in the direction of formation of said ternary material and x is between zero and unity, said layer being produced on a substrate by introducing a gaseous mixture of hydrogen and a halide of one of said B and C elements into a first zone controlled at a first temperature to produce reactants which are passed through a second zone at room temperature, introducing said reactants into a third zone at a second temperature, said third zone containing at least a source material comprising said A element, evaporating the source material to cause it to react with said reactants and depositing said ternary material on to said substrate in a fourth zone at a third temperature which is below said second temperature and while introducing said gaseous mixture into said first zone, varying said first temperature in a range to effect a variation in the proportions of said reactants entering the second zone thereby varying the proportions of said B and C elements in the direction of formation of said ternary material. GaAs 1-x P x is particularly specified, and it may be deposited on to a gallium arsenide or gallium phosphide substrate. Several forms of apparatus for carrying out the process are described in the Specification.
GB2046771A 1970-01-30 1971-04-19 Process for forming a ternary material on a substrate Expired GB1327836A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP877870A JPS4937359B1 (en) 1970-01-30 1970-01-30
JP12482370A JPS4816437B1 (en) 1970-12-29 1970-12-29
JP12469970A JPS5014640B1 (en) 1970-12-29 1970-12-29
JP12472170 1970-12-29

Publications (1)

Publication Number Publication Date
GB1327836A true GB1327836A (en) 1973-08-22

Family

ID=27455019

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2046771A Expired GB1327836A (en) 1970-01-30 1971-04-19 Process for forming a ternary material on a substrate

Country Status (4)

Country Link
CA (1) CA934523A (en)
DE (1) DE2104329C3 (en)
GB (1) GB1327836A (en)
NL (1) NL7101215A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2185758A (en) * 1985-12-28 1987-07-29 Canon Kk Method for forming deposited film

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS514918B1 (en) * 1971-05-04 1976-02-16
FR2419585A1 (en) * 1978-03-07 1979-10-05 Thomson Csf PROCESS FOR OBTAINING IN THE GASEOUS PHASE OF AN EPITAXIAL LAYER OF INDIUM PHOSPHIDE, AND APPARATUS FOR APPLYING THIS PROCESS

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2185758A (en) * 1985-12-28 1987-07-29 Canon Kk Method for forming deposited film
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film

Also Published As

Publication number Publication date
CA934523A (en) 1973-10-02
DE2104329C3 (en) 1975-04-17
DE2104329B2 (en) 1974-08-15
NL7101215A (en) 1971-08-03
DE2104329A1 (en) 1971-08-05

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Legal Events

Date Code Title Description
PS Patent sealed
746 Register noted 'licences of right' (sect. 46/1977)
PE20 Patent expired after termination of 20 years