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GB1325108A - Solid state switch - Google Patents

Solid state switch

Info

Publication number
GB1325108A
GB1325108A GB4263571A GB4263571A GB1325108A GB 1325108 A GB1325108 A GB 1325108A GB 4263571 A GB4263571 A GB 4263571A GB 4263571 A GB4263571 A GB 4263571A GB 1325108 A GB1325108 A GB 1325108A
Authority
GB
United Kingdom
Prior art keywords
voltage
gate electrode
emitter
state switch
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4263571A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1325108A publication Critical patent/GB1325108A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Thyristors (AREA)

Abstract

1325108 Transistor switches MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 13 Sept 1971 [14 Sept 1970] 42635/71 Heading H3T A solid-state switch comprises a voltage controlled thyristor Q 1 having an insulated gate electrode and triggered by a voltage applied to the gate electrode, a transistor Q 2 having an emitter or collector electrode connected to the gate electrode of Q 1 and an arrangement, e.g. an applied voltage V, for controlling the emitter base current of Q 2 . In operation, Q 1 is turned on by grounding the base of Q 2 when it is rendered conductive to apply a voltage V present at the emitter to the gate electrode of Q 1 . As the applied gate voltage is held by Q 1 even after Q 2 is turned off, the base of Q 2 is once again grounded with the voltage V not applied to the emitter so that the gate voltage is reduced for turning Q 1 off. The thyristor Q 1 has an NPNP structure with an insulated gate electrode (Fig. 2, not shown).
GB4263571A 1970-09-14 1971-09-13 Solid state switch Expired GB1325108A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8076370 1970-09-14

Publications (1)

Publication Number Publication Date
GB1325108A true GB1325108A (en) 1973-08-01

Family

ID=13727446

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4263571A Expired GB1325108A (en) 1970-09-14 1971-09-13 Solid state switch

Country Status (5)

Country Link
AU (1) AU448164B2 (en)
CA (1) CA931235A (en)
FR (1) FR2107594A5 (en)
GB (1) GB1325108A (en)
NL (1) NL7112583A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6036708B2 (en) * 1978-02-24 1985-08-22 株式会社日立製作所 Field effect thyristor gate circuit
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch

Also Published As

Publication number Publication date
NL7112583A (en) 1972-03-16
CA931235A (en) 1973-07-31
DE2145452A1 (en) 1973-01-18
FR2107594A5 (en) 1972-05-05
DE2145452B1 (en) 1973-01-18
AU448164B2 (en) 1974-05-09
AU3341571A (en) 1973-03-22

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee