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GB1311558A - Growing crystals - Google Patents

Growing crystals

Info

Publication number
GB1311558A
GB1311558A GB5315670A GB5315670A GB1311558A GB 1311558 A GB1311558 A GB 1311558A GB 5315670 A GB5315670 A GB 5315670A GB 5315670 A GB5315670 A GB 5315670A GB 1311558 A GB1311558 A GB 1311558A
Authority
GB
United Kingdom
Prior art keywords
melt
crystal
motors
temperature
hollow shaft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5315670A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1311558A publication Critical patent/GB1311558A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1311558 Programmed crystal-pulling INTERNATIONAL BUSINESS MACHINES CORP 9 Nov 1970 [26 Nov 1969] 53156/70 Heading B1S [Also in Division G3] An on-line computer-controlled system for growing a crystal from a melt includes means for adjusting the temperature of melt and pulling rate in dependence on idealised and compensating mathematical models. As shown, the Czochralski method for growing single structured crystals from a silicon melt is used in an apparatus comprising a quartz crucible 4, containing a silicon charge the temperature of which is raised by a heater 11, enclosed within a cylindrical chamber 25. A reed 1 is lifted and rotated by a hollow shaft 3, driven by motors 5, 6 to produce a crystal 10. The crucible is rotated and lifted by a hollow shaft 5 driven by motors 8, 9. The surface of the melt 2 is observed by an operative, through a viewing port 24, who initiates the automatic control of crystal growing by an on-line computer system 12. The computer system receives over connections 13, 14, 16, 17 information relating to the speeds of motors 6-9, an indication of temperature of the melt at the bottom of the crucible over a connection 18, from a radiation sensor 30 via the hollow shaft 5, and over a connection 15, the crystal diameter as determined by a radiation sensor 31. The computer system 12 is promrammed to control the motors 6-9 through lines 19-22 and the heater, through a line 23, in accordance mathematical models. The melt temperature control is based upon a first mathematical model describing the heat energy flow into and out of the apparatus and a second mathematical model which compensates the idealized model for the uncontrolled parameters which are present in a physically realisable system.
GB5315670A 1969-11-26 1970-11-09 Growing crystals Expired GB1311558A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88027369A 1969-11-26 1969-11-26

Publications (1)

Publication Number Publication Date
GB1311558A true GB1311558A (en) 1973-03-28

Family

ID=25375921

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5315670A Expired GB1311558A (en) 1969-11-26 1970-11-09 Growing crystals

Country Status (5)

Country Link
US (1) US3621213A (en)
CA (1) CA935743A (en)
DE (1) DE2047198C3 (en)
FR (1) FR2071788A5 (en)
GB (1) GB1311558A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2178872A (en) * 1985-08-08 1987-02-18 Amoco Corp Drilling a well using a predictive simulation
GB2188751A (en) * 1983-12-05 1987-10-07 Otis Eng Co Well production controller system

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3805044A (en) * 1971-04-07 1974-04-16 Western Electric Co Computerized process control system for the growth of synthetic quartz crystals
US3740563A (en) * 1971-06-25 1973-06-19 Monsanto Co Electroptical system and method for sensing and controlling the diameter and melt level of pulled crystals
JPS5027480B1 (en) * 1971-07-28 1975-09-08
US3761692A (en) * 1971-10-01 1973-09-25 Texas Instruments Inc Automated crystal pulling system
US3870477A (en) * 1972-07-10 1975-03-11 Tyco Laboratories Inc Optical control of crystal growth
US3882319A (en) * 1973-10-23 1975-05-06 Motorola Inc Automatic melt level control for growth of semiconductor crystals
US3998598A (en) * 1973-11-23 1976-12-21 Semimetals, Inc. Automatic diameter control for crystal growing facilities
GB1465191A (en) * 1974-03-29 1977-02-23 Nat Res Dev Automatically controlled crystal growth
GB1478192A (en) * 1974-03-29 1977-06-29 Nat Res Dev Automatically controlled crystal growth
DE2446293C2 (en) * 1974-04-03 1986-01-30 National Research Development Corp., London Device for regulating the rod cross-section during Czochralski drawing
US4350557A (en) * 1974-06-14 1982-09-21 Ferrofluidics Corporation Method for circumferential dimension measuring and control in crystal rod pulling
US4207293A (en) * 1974-06-14 1980-06-10 Varian Associates, Inc. Circumferential error signal apparatus for crystal rod pulling
US4025386A (en) * 1974-12-20 1977-05-24 Union Carbide Corporation Method for producing r-plane single crystal alpha alumina in massive form having substantially circular cross-section
DE2516197C3 (en) * 1975-04-14 1982-02-04 Schweizerische Aluminium AG, 3965 Chippis Weighing device for automatic control of the diameter of a crystal when pulling it out of a crucible
US4058429A (en) * 1975-12-04 1977-11-15 Westinghouse Electric Corporation Infrared temperature control of Czochralski crystal growth
US4080172A (en) * 1975-12-29 1978-03-21 Monsanto Company Zone refiner automatic control
US4289572A (en) * 1976-12-27 1981-09-15 Dow Corning Corporation Method of closing silicon tubular bodies
US4135204A (en) * 1977-06-09 1979-01-16 Chesebrough-Pond's Inc. Automatic glass blowing apparatus and method
EP0042901B1 (en) * 1980-06-26 1984-10-31 International Business Machines Corporation Process for controlling the oxygen content of silicon ingots pulled by the czochralski method
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
JPS6033299A (en) * 1983-07-29 1985-02-20 Toshiba Corp Apparatus for preparing single crystal
FR2553793B1 (en) * 1983-10-19 1986-02-14 Crismatec METHOD FOR CONTROLLING A SINGLE CRYSTAL DRAWING MACHINE
DE3480721D1 (en) * 1984-08-31 1990-01-18 Gakei Denki Seisakusho METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTALS.
JPS63242991A (en) * 1987-03-31 1988-10-07 Shin Etsu Handotai Co Ltd Method for controlling crystal diameter
USRE34375E (en) * 1987-05-05 1993-09-14 Mobil Solar Energy Corporation System for controlling apparatus for growing tubular crystalline bodies
GB8715327D0 (en) * 1987-06-30 1987-08-05 Secr Defence Growth of semiconductor singel crystals
JP2678383B2 (en) * 1989-05-30 1997-11-17 信越半導体 株式会社 Device for single crystal
JPH06102590B2 (en) * 1990-02-28 1994-12-14 信越半導体株式会社 Single crystal neck growth automatic control method by CZ method
JPH0717475B2 (en) * 1991-02-14 1995-03-01 信越半導体株式会社 Single crystal neck growth automatic control method
WO1992019797A1 (en) * 1991-04-26 1992-11-12 Mitsubishi Materials Corporation Process for pulling up single crystal
US5325229A (en) * 1993-05-10 1994-06-28 Phillips Petroleum Company Temperature control of crystals used in optical oscillators
US5560759A (en) * 1994-11-14 1996-10-01 Lucent Technologies Inc. Core insertion method for making optical fiber preforms and optical fibers fabricated therefrom
JP2966322B2 (en) * 1995-02-27 1999-10-25 三菱マテリアルシリコン株式会社 Silicon single crystal ingot and manufacturing method thereof
US5888299A (en) * 1995-12-27 1999-03-30 Shin-Etsu Handotai Co., Ltd. Apparatus for adjusting initial position of melt surface
JPH09255485A (en) * 1996-03-15 1997-09-30 Shin Etsu Handotai Co Ltd Production of single crystal and seed crystal
DE69601424T2 (en) * 1996-06-27 1999-06-02 Wacker Siltronic Gesellschaft Fuer Halbleitermaterialien Ag, 84489 Burghausen Method and device for controlling crystal growth
JP3444178B2 (en) * 1998-02-13 2003-09-08 信越半導体株式会社 Single crystal manufacturing method
JP2002539060A (en) * 1998-10-14 2002-11-19 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド Method and apparatus for accurately withdrawing crystals
US6560514B1 (en) 1999-09-23 2003-05-06 Kic Thermal Profiling Method and apparatus for optimizing control of a part temperature in conveyorized thermal processor
US6453219B1 (en) 1999-09-23 2002-09-17 Kic Thermal Profiling Method and apparatus for controlling temperature response of a part in a conveyorized thermal processor
KR20020081287A (en) 2000-02-01 2002-10-26 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations
US6283379B1 (en) 2000-02-14 2001-09-04 Kic Thermal Profiling Method for correlating processor and part temperatures using an air temperature sensor for a conveyorized thermal processor
CN103764880B (en) * 2011-08-26 2016-10-26 康萨克公司 Consumable electrode vacuum arc smelting process is utilized to carry out refine metalloid
US11414778B2 (en) 2019-07-29 2022-08-16 Globalwafers Co., Ltd. Production and use of dynamic state charts when growing a single crystal silicon ingot

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3246550A (en) * 1959-11-02 1966-04-19 Pittsburgh Plate Glass Co Length and area partitioning methods and apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2188751A (en) * 1983-12-05 1987-10-07 Otis Eng Co Well production controller system
GB2188750A (en) * 1983-12-05 1987-10-07 Otis Eng Co Well production controller system
GB2178872A (en) * 1985-08-08 1987-02-18 Amoco Corp Drilling a well using a predictive simulation
GB2178872B (en) * 1985-08-08 1990-03-28 Amoco Corp A method of drilling a well utilising predictive simulation

Also Published As

Publication number Publication date
DE2047198A1 (en) 1971-07-29
US3621213A (en) 1971-11-16
CA935743A (en) 1973-10-23
DE2047198C3 (en) 1974-04-25
FR2071788A5 (en) 1971-09-17
DE2047198B2 (en) 1973-09-13

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee