GB1307877A - Method of and device for controlling optical conversion in semi conductor - Google Patents
Method of and device for controlling optical conversion in semi conductorInfo
- Publication number
- GB1307877A GB1307877A GB2937770A GB2937770A GB1307877A GB 1307877 A GB1307877 A GB 1307877A GB 2937770 A GB2937770 A GB 2937770A GB 2937770 A GB2937770 A GB 2937770A GB 1307877 A GB1307877 A GB 1307877A
- Authority
- GB
- United Kingdom
- Prior art keywords
- deep
- semi
- level impurity
- doped
- depletion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000006243 chemical reaction Methods 0.000 title abstract 2
- 230000003287 optical effect Effects 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052748 manganese Inorganic materials 0.000 abstract 2
- 239000011572 manganese Substances 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910005540 GaP Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/95—Circuit arrangements
- H10F77/953—Circuit arrangements for devices having potential barriers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
- Led Devices (AREA)
Abstract
1307877 Semi-conductor devices SEMICONDUCTOR RESEARCH FOUNDATION 17 June 1970 [18 June 1969] 29377/70 Heading H1K [Also in Division H4] A semi-conductor optical conversion control arrangement comprises a semi-conductor device whose body is doped with a deep-level impurity and has a depletion layer, means being provided to vary the charge of the deep-level impurity in the depletion layer. The device may be an N+P type or P+N type silicon diode doped with gold as deep-level impurity, or a gallium arsenide diode doped with manganese or molybdenum, or a gallium phosphide diode doped with manganese or iron. The charge of the deep level impurity in the depletion layer may be changed by directing light to this layer or injecting an electric current into it. The arrangement may be used to produce current in response to light or for varying light transmitted through it.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4811969 | 1969-06-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1307877A true GB1307877A (en) | 1973-02-21 |
Family
ID=12794423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2937770A Expired GB1307877A (en) | 1969-06-18 | 1970-06-17 | Method of and device for controlling optical conversion in semi conductor |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE2030065A1 (en) |
| FR (1) | FR2046865B1 (en) |
| GB (1) | GB1307877A (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3417248A (en) * | 1962-03-27 | 1968-12-17 | Gen Electric | Tunneling semiconductor device exhibiting storage characteristics |
| NL6411983A (en) * | 1964-10-15 | 1966-04-18 | ||
| US3415996A (en) * | 1965-02-15 | 1968-12-10 | Philips Corp | Photosensitive semiconductor with two radiation sources for producing two transition steps |
-
1970
- 1970-06-17 FR FR707022381A patent/FR2046865B1/fr not_active Expired
- 1970-06-17 GB GB2937770A patent/GB1307877A/en not_active Expired
- 1970-06-18 DE DE19702030065 patent/DE2030065A1/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2030065A1 (en) | 1971-05-13 |
| FR2046865A1 (en) | 1971-03-12 |
| FR2046865B1 (en) | 1973-01-12 |
| DE2030065C2 (en) | 1987-12-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE20 | Patent expired after termination of 20 years |