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GB1299610A - Improvements in and relating to epitaxial deposition - Google Patents

Improvements in and relating to epitaxial deposition

Info

Publication number
GB1299610A
GB1299610A GB6324769A GB6324769A GB1299610A GB 1299610 A GB1299610 A GB 1299610A GB 6324769 A GB6324769 A GB 6324769A GB 6324769 A GB6324769 A GB 6324769A GB 1299610 A GB1299610 A GB 1299610A
Authority
GB
United Kingdom
Prior art keywords
substrate
melt
slide
semi
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6324769A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1299610A publication Critical patent/GB1299610A/en
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/02—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material to surfaces by single means not covered by groups B05C1/00 - B05C7/00, whether or not also using other means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1299610 Semi-conductor processing PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 30 Dec 1969 [31 Dec 1968] 63247/69 Heading H1K [Also in Division B1] In the formation on a monocrystalline substrate of a semi-conductor layer by liquid phase epitaxy the material for the liquid phase is melted and only then brought into contact with the substrate, contact being effected by the use of a slide forming part of the growth crucible. As shown in Fig. 1 the substrate 2 lies on the floor of the crucible and the melt 10 is formed above the slide 3 which is spaced slightly from the substrate. At the desired melt temperature the slide is pulled back to deposit the melt on the substrate. The entire solute may be crystallized or the slide (the upper side of the leading edge of which may be tapered) may be introduced at a particular lower temperature to separate off the bulk of the melt. As shown in Fig. 4 the substrate 27 is instead carried in a recess 28 in the slide 24, the slide being inserted when the desired melt temperature is reached. (It need not then be a consequence that the substrate is heated during fusing of the melt). The crucible shown has two compartments the melts of which may contain the same semiconductor with different impurity concentrations and/or impurities of different conductivity type or the two melts may contain different semi-conductors. The substrate may be placed successively or alternately in the two molts to grow two or more superimposed layers. The substrate may be semi-conductor or monocrystalline alumina. Boron nitride or quartz may be used for the crucible. A typical melt may be made by saturating gallium with arsenic or with gallium arsenide at 900� C. Deposition from the melt may be started at about this temperature and, for example, stopped when the melt temperature has fallen to 500� C.
GB6324769A 1968-12-31 1969-12-30 Improvements in and relating to epitaxial deposition Expired GB1299610A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR182980 1968-12-31

Publications (1)

Publication Number Publication Date
GB1299610A true GB1299610A (en) 1972-12-13

Family

ID=8659864

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6324769A Expired GB1299610A (en) 1968-12-31 1969-12-30 Improvements in and relating to epitaxial deposition

Country Status (6)

Country Link
JP (1) JPS4915988B1 (en)
BE (1) BE743828A (en)
DE (1) DE2000096C3 (en)
FR (1) FR1600341A (en)
GB (1) GB1299610A (en)
NL (1) NL159813B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2163075C2 (en) * 1970-12-23 1982-03-04 Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven Process for the production of electroluminescent semiconductor components
JPS5342230B2 (en) * 1972-10-19 1978-11-09
JPS49102652U (en) * 1972-12-22 1974-09-04
JPS5056873A (en) * 1973-09-14 1975-05-17
DE3036643C2 (en) * 1980-09-29 1984-09-20 Siemens AG, 1000 Berlin und 8000 München Device for liquid phase epitaxy

Also Published As

Publication number Publication date
NL159813B (en) 1979-03-15
DE2000096B2 (en) 1977-09-15
DE2000096C3 (en) 1978-05-18
FR1600341A (en) 1970-07-20
JPS4915988B1 (en) 1974-04-18
DE2000096A1 (en) 1970-07-23
BE743828A (en) 1970-06-29
NL6919464A (en) 1970-07-02

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years