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GB1292265A - Improvements in or relating to electronic memory storage apparatus - Google Patents

Improvements in or relating to electronic memory storage apparatus

Info

Publication number
GB1292265A
GB1292265A GB9148/70A GB914870A GB1292265A GB 1292265 A GB1292265 A GB 1292265A GB 9148/70 A GB9148/70 A GB 9148/70A GB 914870 A GB914870 A GB 914870A GB 1292265 A GB1292265 A GB 1292265A
Authority
GB
United Kingdom
Prior art keywords
goes
earth
bit line
write
turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB9148/70A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of GB1292265A publication Critical patent/GB1292265A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

1292265 F.E.T. memory circuits HONEYWELL Inc 25 Feb 1970 [19 March 1969] 9148/70 Heading H3T [Also in Division G4] A memory cell has three transistors such as F.E.T.'s 12, 14, 16 connected substantially as shown to a storage node C10, a selection signal input 18, bit lines 20, 22, and earth. The signal V x at 18 has three levels (Fig. 3, not shown), being zero in time t 0 t 1 when bit line 22 is charged to V c = - 13v. via F.E.T. 26, held on by V D = - 20v. When reading, V x goes to - 6v. (t 1 - t3), and F.E.T. 16, but not F.E.T. 12, turns on. F.E.T. 14 is on or not according to whether C10 stores negative voltage (1) or zero (0), and so bit line 22 is discharged to earth or not, F.E.T. 26 having been turned off at t 1 . When V c goes up to Ov. (at t 2 ) F.E.T. 24 is therefore on or not according to whether bit line 22 is still negative or not, and a read amplifier 40 having a normally negative input V s senses current flow or lack of it from F.E.T. 24 to that input when strobed at 42. To refresh the stored data, V x goes to - 20v. to turn on F.E.T. 12 at t 3 and apply V s =- 17 or earth to C10, according to the read-out signal. To write, in t4 - t 5 time, V D goes to - 20 to turn on F.E.T. 26 and earth bit line 22 (to V c =0v.) so keeping F.E.T. 24 off, while V s is made Ov. or - 17v. to write a 0 or 1 by write driver 44. A F.E.T. - gate (Fig. 2, not shown) may be included between point 36 and the write and read circuits 40, 44. In a matrix (Fig. 4, not shown) each column of cells has the F.E.T.'s 24, 26 of Fig. 1 in common (76), and column select gates (70). Each row has a common select circuit (58), whose inputs (XAO, XBO) must both be high to turn off parallel F.E.T.'s (64, 66) and pass the three-level selection signal V x (from 65) through a F.E.T. (62) to the cells, when a signal V g is negative.
GB9148/70A 1969-03-19 1970-02-25 Improvements in or relating to electronic memory storage apparatus Expired GB1292265A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80842169A 1969-03-19 1969-03-19

Publications (1)

Publication Number Publication Date
GB1292265A true GB1292265A (en) 1972-10-11

Family

ID=25198716

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9148/70A Expired GB1292265A (en) 1969-03-19 1970-02-25 Improvements in or relating to electronic memory storage apparatus

Country Status (7)

Country Link
JP (1) JPS5623237B1 (en)
CA (1) CA941964A (en)
CH (1) CH540548A (en)
DE (1) DE2013233A1 (en)
FR (1) FR2037223B1 (en)
GB (1) GB1292265A (en)
SE (3) SE382275B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037015U (en) * 1983-08-18 1985-03-14 丸山　スミエ shirt pocket

Also Published As

Publication number Publication date
SE382275B (en) 1976-01-19
SE7415002L (en) 1974-11-29
CH540548A (en) 1973-08-15
CA941964A (en) 1974-02-12
SE7502344L (en) 1975-03-03
FR2037223B1 (en) 1974-05-03
SE396495B (en) 1977-09-19
DE2013233A1 (en) 1970-10-01
FR2037223A1 (en) 1970-12-31
JPS5623237B1 (en) 1981-05-29

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee