GB1282363A - Improvements in or relating to apparatus for use in the diffusion of a doping substance into a body of semiconductor material - Google Patents
Improvements in or relating to apparatus for use in the diffusion of a doping substance into a body of semiconductor materialInfo
- Publication number
- GB1282363A GB1282363A GB3136770A GB3136770A GB1282363A GB 1282363 A GB1282363 A GB 1282363A GB 3136770 A GB3136770 A GB 3136770A GB 3136770 A GB3136770 A GB 3136770A GB 1282363 A GB1282363 A GB 1282363A
- Authority
- GB
- United Kingdom
- Prior art keywords
- tube
- semi
- silicon
- conductor
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000009792 diffusion process Methods 0.000 title abstract 2
- 239000000126 substance Substances 0.000 title 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052582 BN Inorganic materials 0.000 abstract 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 abstract 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 150000001247 metal acetylides Chemical class 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract 1
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 abstract 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/12—Heating of the reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1282363 Semi-conductor device manufacture SIEMENS AG 29 June 1970 [30 June 1969] 31367/70 Heading H1K Diffusion of impurity into a semi-conductor wafer is effected within an open-ended tube of semi-conductor material with walls at least 5 mm. thick. The tube, preferably made of the same material as the wafer, may be outwardly flared at both ends and fitted with quartz plugs through which the diffusant gas enters and leaves. The tube can be made by boring out a rod of monocrystalline silicon or by deposition from a gaseous compound of silicon on to a carrier which is subsequently removed, and when appropriately doped is provided with terminal electrodes so that it can function as a resistance heater or with a metallic ring for inductive heating by a surrounding coil. Alternative materials specified for the tube are the carbides of silicon, tungsten and titanium, gallium arsenide, indium phosphide, boron nitride and germanium. Specified donor doping diffusant gases are phosphorus pentoxide and trichloride, phosphine, and phosphonitrylic chloride, in argon or other inert carrier gas.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691933128 DE1933128C3 (en) | 1969-06-30 | 1969-06-30 | Tube for diffusing dopants into semiconductor bodies |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1282363A true GB1282363A (en) | 1972-07-19 |
Family
ID=5738424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3136770A Expired GB1282363A (en) | 1969-06-30 | 1970-06-29 | Improvements in or relating to apparatus for use in the diffusion of a doping substance into a body of semiconductor material |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS4823710B1 (en) |
| AT (1) | AT328509B (en) |
| CH (1) | CH518622A (en) |
| DE (1) | DE1933128C3 (en) |
| FR (1) | FR2051429A5 (en) |
| GB (1) | GB1282363A (en) |
| NL (1) | NL165795C (en) |
| SE (1) | SE358667B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2126417A (en) * | 1982-08-26 | 1984-03-21 | Heraeus Schott Quarzschmelze | Support systems for conveying semiconductor devices into hostile environments during manufacture |
| GB2135115A (en) * | 1983-02-09 | 1984-08-22 | Heraeus Schott Quarzschmelze | Improvements in or relating to support systems |
| GB2159328A (en) * | 1984-05-21 | 1985-11-27 | Christopher Frank Mcconnell | Vessel and apparatus for treating wafers with fluids |
| US4633893A (en) * | 1984-05-21 | 1987-01-06 | Cfm Technologies Limited Partnership | Apparatus for treating semiconductor wafers |
| US4738272A (en) * | 1984-05-21 | 1988-04-19 | Mcconnell Christopher F | Vessel and system for treating wafers with fluids |
| US4740249A (en) * | 1984-05-21 | 1988-04-26 | Christopher F. McConnell | Method of treating wafers with fluid |
| US4856544A (en) * | 1984-05-21 | 1989-08-15 | Cfm Technologies, Inc. | Vessel and system for treating wafers with fluids |
| US6136724A (en) * | 1997-02-18 | 2000-10-24 | Scp Global Technologies | Multiple stage wet processing chamber |
-
1969
- 1969-06-30 DE DE19691933128 patent/DE1933128C3/en not_active Expired
-
1970
- 1970-05-22 NL NL7007490A patent/NL165795C/en not_active IP Right Cessation
- 1970-06-29 GB GB3136770A patent/GB1282363A/en not_active Expired
- 1970-06-29 SE SE900270A patent/SE358667B/xx unknown
- 1970-06-29 CH CH978770A patent/CH518622A/en not_active IP Right Cessation
- 1970-06-29 FR FR7023997A patent/FR2051429A5/fr not_active Expired
- 1970-06-29 AT AT583270A patent/AT328509B/en not_active IP Right Cessation
- 1970-06-30 JP JP5659670A patent/JPS4823710B1/ja active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2126417A (en) * | 1982-08-26 | 1984-03-21 | Heraeus Schott Quarzschmelze | Support systems for conveying semiconductor devices into hostile environments during manufacture |
| GB2135115A (en) * | 1983-02-09 | 1984-08-22 | Heraeus Schott Quarzschmelze | Improvements in or relating to support systems |
| GB2159328A (en) * | 1984-05-21 | 1985-11-27 | Christopher Frank Mcconnell | Vessel and apparatus for treating wafers with fluids |
| US4633893A (en) * | 1984-05-21 | 1987-01-06 | Cfm Technologies Limited Partnership | Apparatus for treating semiconductor wafers |
| US4738272A (en) * | 1984-05-21 | 1988-04-19 | Mcconnell Christopher F | Vessel and system for treating wafers with fluids |
| US4740249A (en) * | 1984-05-21 | 1988-04-26 | Christopher F. McConnell | Method of treating wafers with fluid |
| US4856544A (en) * | 1984-05-21 | 1989-08-15 | Cfm Technologies, Inc. | Vessel and system for treating wafers with fluids |
| US6136724A (en) * | 1997-02-18 | 2000-10-24 | Scp Global Technologies | Multiple stage wet processing chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| AT328509B (en) | 1976-03-25 |
| DE1933128B2 (en) | 1977-12-08 |
| CH518622A (en) | 1972-01-31 |
| NL165795C (en) | 1981-05-15 |
| FR2051429A5 (en) | 1971-04-02 |
| NL7007490A (en) | 1971-01-04 |
| NL165795B (en) | 1980-12-15 |
| SE358667B (en) | 1973-08-06 |
| DE1933128C3 (en) | 1978-08-10 |
| ATA583270A (en) | 1975-06-15 |
| DE1933128A1 (en) | 1971-01-21 |
| JPS4823710B1 (en) | 1973-07-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |