GB1279275A - Magnetosensitive element - Google Patents
Magnetosensitive elementInfo
- Publication number
- GB1279275A GB1279275A GB41945/69A GB4194569A GB1279275A GB 1279275 A GB1279275 A GB 1279275A GB 41945/69 A GB41945/69 A GB 41945/69A GB 4194569 A GB4194569 A GB 4194569A GB 1279275 A GB1279275 A GB 1279275A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- regions
- polycrystalline
- substrate
- aug
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 229910052748 manganese Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/40—Devices controlled by magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
Abstract
1279275 Magnetosensitive devices SONY CORP 22 Aug 1969 [24 Aug 1968 (3)] 41945/69 Heading H1K A magnetoresistor comprises p type and n type regions P, N in a body S of intrinsic or weakly semi-conducting material, a polycrystalline region F being provided in the body S so that when the application of a magnetic field perpendicular to the plane of the body S causes charge carriers injected therein from either of the regions P or N to be deflected towards the region F, the relatively high carrier recombination rate in that region causes the resistance of the device between the regions P and N to increase. The effect may be enhanced by diffusing into the region F a dopant such as Au, Cu, Ni, Ag, Zn, Mn, Fe or Pt to decrease the carrier lifetime still further. In the embodiments the device is made of Si or Ge, the polycrystalline region F being formed in an otherwise monocrystalline layer 103 vapour deposited on a substrate, which may subsequently be removed, due to the presence on the substrate surface of locally roughened areas or to the local deposition of material having a different lattice constant to the substrate or of polycrystalline Si or SiO 2 . Individual magnetoresistors may be broken from a common wafer in whichtheyareallsimultaneously formed. An integrated circuit arrangement is also described comprising four such devices in a single semi-conductor body, separated by polycrystalline regions and arranged in such relative polarities that the overall resistance of the arrangement remains unaltered by the application of a magnetic field.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6071968 | 1968-08-24 | ||
| JP6071868 | 1968-08-24 | ||
| JP6071768 | 1968-08-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1279275A true GB1279275A (en) | 1972-06-28 |
Family
ID=27297278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB41945/69A Expired GB1279275A (en) | 1968-08-24 | 1969-08-22 | Magnetosensitive element |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1943173A1 (en) |
| FR (1) | FR2016350A1 (en) |
| GB (1) | GB1279275A (en) |
| NL (1) | NL6912910A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3916428A (en) * | 1973-05-19 | 1975-10-28 | Matsushita Electric Ind Co Ltd | Semiconductor magneto-resistance element |
-
1969
- 1969-08-22 GB GB41945/69A patent/GB1279275A/en not_active Expired
- 1969-08-25 FR FR6929077A patent/FR2016350A1/fr not_active Withdrawn
- 1969-08-25 DE DE19691943173 patent/DE1943173A1/en active Pending
- 1969-08-25 NL NL6912910A patent/NL6912910A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL6912910A (en) | 1970-02-26 |
| DE1943173A1 (en) | 1970-02-26 |
| FR2016350A1 (en) | 1970-05-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |