GB1277172A - Method of making a large integrated circuit - Google Patents
Method of making a large integrated circuitInfo
- Publication number
- GB1277172A GB1277172A GB32467/70A GB3246770A GB1277172A GB 1277172 A GB1277172 A GB 1277172A GB 32467/70 A GB32467/70 A GB 32467/70A GB 3246770 A GB3246770 A GB 3246770A GB 1277172 A GB1277172 A GB 1277172A
- Authority
- GB
- United Kingdom
- Prior art keywords
- units
- strips
- sub
- forming
- july
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000001788 irregular Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/90—Masterslice integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
1277172 Integrated circuits HITACHI Ltd 3 July 1970 [4 July 1969 15 Oct 1969] 32467/70 Heading H1K [Also in Division G4] A method of making a large scale integrated circuit comprises the steps of forming a plurality of spaced apart sub-circuit units in a semiconductor wafer, providing a conductive layer lattice formed around and spaced from each of the said units and etching it to form a plurality of conductive strips, covering these strips with an insulating film, forming openings in this film according to a predetermined pattern to expose the surface of the strips where required, and forming interconnection lines between these strips and the electrodes of the sub-circuit units. The spacings between the spaced apart subcircuit units may be constant, or irregular as when larger spacings are allowed around more complex sub-circuit units. Further to ensure that connections are formed between good units only, the units may be tested before connection, bad units not being used and remaining unconnected. Prior to interconnection, the subcircuit units can be modified if required. An example of the construction of a binary adder by the method is described.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5248269A JPS492871B1 (en) | 1969-07-04 | 1969-07-04 | |
JP8183169A JPS493035B1 (en) | 1969-10-15 | 1969-10-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1277172A true GB1277172A (en) | 1972-06-07 |
Family
ID=26393084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB32467/70A Expired GB1277172A (en) | 1969-07-04 | 1970-07-03 | Method of making a large integrated circuit |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE2033130A1 (en) |
GB (1) | GB1277172A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2334405A1 (en) * | 1972-07-10 | 1974-01-31 | Amdahl Corp | LSI LABELS AND METHOD OF MANUFACTURING THE SAME |
FR2315804A1 (en) * | 1975-06-23 | 1977-01-21 | Ibm | HIGH DENSITY ARCHITECTURE FOR SEMICONDUCTOR BLOCK |
WO2007086019A1 (en) * | 2006-01-26 | 2007-08-02 | Nxp B.V. | Production of integrated circuits comprising different components |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2643482A1 (en) * | 1976-09-27 | 1978-03-30 | Siemens Ag | SEMI-CONDUCTOR PLATE FOR MANUFACTURING HIGHLY INTEGRATED COMPONENTS |
-
1970
- 1970-07-03 GB GB32467/70A patent/GB1277172A/en not_active Expired
- 1970-07-03 DE DE19702033130 patent/DE2033130A1/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2334405A1 (en) * | 1972-07-10 | 1974-01-31 | Amdahl Corp | LSI LABELS AND METHOD OF MANUFACTURING THE SAME |
FR2315804A1 (en) * | 1975-06-23 | 1977-01-21 | Ibm | HIGH DENSITY ARCHITECTURE FOR SEMICONDUCTOR BLOCK |
WO2007086019A1 (en) * | 2006-01-26 | 2007-08-02 | Nxp B.V. | Production of integrated circuits comprising different components |
Also Published As
Publication number | Publication date |
---|---|
DE2033130A1 (en) | 1971-02-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3335338A (en) | Integrated circuit device and method | |
US2889532A (en) | Wiring assembly with stacked conductor cards | |
GB1443361A (en) | Lsi chip construction | |
ES442615A1 (en) | Semiconductor integrated circuit devices | |
GB1236402A (en) | Improvements relating to a semiconductor integrated circuit | |
US3354360A (en) | Integrated circuits with active elements isolated by insulating material | |
ATE51109T1 (en) | ELECTRICAL THIN FILM CONNECTIONS FOR INTEGRATED CIRCUITS. | |
US3771217A (en) | Integrated circuit arrays utilizing discretionary wiring and method of fabricating same | |
ES438666A1 (en) | IMPROVEMENTS INTRODUCED IN A CIRCUIT SEMICONDUCTOR PLATE STRUCTURE INTEGRATED IN A PLANE. | |
US3621562A (en) | Method of manufacturing integrated circuit arrays | |
GB1277172A (en) | Method of making a large integrated circuit | |
US4005470A (en) | Triple diffused logic elements | |
GB1286737A (en) | Multilevel conductive systems | |
GB1221914A (en) | Manufacture of integrated circuits | |
JPH0348669B2 (en) | ||
US3673468A (en) | Semiconductor rectifying arrangement | |
US3544860A (en) | Integrated power output circuit | |
US3774079A (en) | Monolithically fabricated tranistor circuit with multilayer conductive patterns | |
US3577036A (en) | Method and means for interconnecting conductors on different metalization pattern levels on monolithically fabricated integrated circuit chips | |
JPS57202776A (en) | Semiconductor device | |
US3307079A (en) | Semiconductor switch devices | |
GB1062928A (en) | Multi-wafer integrated circuits | |
GB1306189A (en) | ||
JPS6052040A (en) | Semiconductor integrated circuit | |
GB1248584A (en) | Thyristors and other semi-conductor devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PLNP | Patent lapsed through nonpayment of renewal fees |