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GB1277114A - Mos-bipolar high voltage driver circuit - Google Patents

Mos-bipolar high voltage driver circuit

Info

Publication number
GB1277114A
GB1277114A GB35891/69A GB3589169A GB1277114A GB 1277114 A GB1277114 A GB 1277114A GB 35891/69 A GB35891/69 A GB 35891/69A GB 3589169 A GB3589169 A GB 3589169A GB 1277114 A GB1277114 A GB 1277114A
Authority
GB
United Kingdom
Prior art keywords
mosfets
binary
decoder
share
division
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB35891/69A
Inventor
Robert Hudson Crawford
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1277114A publication Critical patent/GB1277114A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)

Abstract

1277114 Transistor gating circuits TEXAS INSTRUMENTS Inc 16 July 1969 [9 Sept 1968] 35891/69 Heading H3T [Also in Division H1] Decimal outputs 0-9 of a binary-todecimal decoder 12 are connected through respective driver stages comprising MOSFET/ bipolar transistor pairs such as 30/40 to cathodes 50-59 of an alphanumeric display tube 60. The MOSFETs 30-39 all share a common drain region in an integrated circuit structure (see Division H1) and the source of each is connected to the emitter of one of the bipolar transistors 40-49, all of which share a common base region, e.g. the semi-conductor substrate carrying the entire circuit. The common drain of the MOSFETs 30-39 is connected to a voltage-controlled Eccles-Jordan flip-flop 66. Each decimal output column of the decoder 12 is connected to the drains of four p channel enhancement mode MOSFETs, the gates of which are connected to four of a total of eight binary input lines to four of which, A-D, true binary inputs are supplied, the other four, A-D, receiving complement binary inputs.
GB35891/69A 1968-09-09 1969-07-16 Mos-bipolar high voltage driver circuit Expired GB1277114A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75825368A 1968-09-09 1968-09-09

Publications (1)

Publication Number Publication Date
GB1277114A true GB1277114A (en) 1972-06-07

Family

ID=25051097

Family Applications (1)

Application Number Title Priority Date Filing Date
GB35891/69A Expired GB1277114A (en) 1968-09-09 1969-07-16 Mos-bipolar high voltage driver circuit

Country Status (6)

Country Link
JP (1) JPS5533185B1 (en)
DE (1) DE1945217A1 (en)
ES (1) ES371158A1 (en)
FR (1) FR2017616A1 (en)
GB (1) GB1277114A (en)
NL (1) NL6911903A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5013132B1 (en) * 1970-12-02 1975-05-17

Also Published As

Publication number Publication date
NL6911903A (en) 1970-03-11
JPS5533185B1 (en) 1980-08-29
ES371158A1 (en) 1971-10-16
DE1945217A1 (en) 1970-03-19
FR2017616A1 (en) 1970-05-22

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees