GB1263626A - Epitaxial method for fabricating an avalanche diode and product - Google Patents
Epitaxial method for fabricating an avalanche diode and productInfo
- Publication number
- GB1263626A GB1263626A GB24782/69A GB2478269A GB1263626A GB 1263626 A GB1263626 A GB 1263626A GB 24782/69 A GB24782/69 A GB 24782/69A GB 2478269 A GB2478269 A GB 2478269A GB 1263626 A GB1263626 A GB 1263626A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- regions
- doped
- epitaxially deposited
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 abstract 4
- 230000008021 deposition Effects 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Light Receiving Elements (AREA)
Abstract
1,263,626. Semi-conductor devices. TEXAS INSTRUMENTS Inc. 15 May, 1969 [17 June, 1968], No. 24782/69. Heading H1K. A semi-conductor device comprises a plurality of regions having uniform doping levels along their boundaries, so forming abrupt junctions between adjacent regions, the regions comprising two heavily doped regions of opposite conductivity type, one of which is epitaxially deposited, with an interposed lightly doped region which is also epitaxially deposited. An avalanche diode for producing microwave oscillations comprises a heavily doped (N+) substrate 12, of antimony doped silicon, a lightly doped (N-) epitaxially deposited, thin layer 14 and a heavily doped (P + ) epitaxially deposited, thin layer 16, doped with boron. The epitaxial depositions are carried out quickly at a relatively low temperature of 1100 C. so as to prevent out diffusion from the substrate. Contact layers 18, 20, 22, 24 are applied sequentially to both sides of the device following photo resist, etching and lapping steps. Thermocompression and ultrasonic bonding may be used to bond the contact layers together. The substrate is finally etched through to produce a plurality of separate devices. A copper heat sink 28 may be bonded to one side of the diode via a gold layer 26. In an alternative embodiment a Read diode, with an intrinsic region formed between the substrate and the lightly doped region may be also constructed using epitaxial deposition.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US73779068A | 1968-06-17 | 1968-06-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1263626A true GB1263626A (en) | 1972-02-16 |
Family
ID=24965343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB24782/69A Expired GB1263626A (en) | 1968-06-17 | 1969-05-15 | Epitaxial method for fabricating an avalanche diode and product |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1930016C3 (en) |
| FR (1) | FR2019285B1 (en) |
| GB (1) | GB1263626A (en) |
| NL (1) | NL6909204A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009134324A1 (en) * | 2008-04-29 | 2009-11-05 | Sandisk 3D Llc | Reduction of leakage current in a vertical diode |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL122283C (en) * | 1958-07-25 | |||
| FR1519634A (en) * | 1965-12-30 | 1968-04-05 | Siemens Ag | Avalanche diode for producing oscillations |
-
1969
- 1969-05-15 GB GB24782/69A patent/GB1263626A/en not_active Expired
- 1969-06-13 DE DE1930016A patent/DE1930016C3/en not_active Expired
- 1969-06-17 NL NL6909204A patent/NL6909204A/xx unknown
- 1969-06-17 FR FR696920070A patent/FR2019285B1/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009134324A1 (en) * | 2008-04-29 | 2009-11-05 | Sandisk 3D Llc | Reduction of leakage current in a vertical diode |
| US8450835B2 (en) | 2008-04-29 | 2013-05-28 | Sandisk 3D Llc | Reverse leakage reduction and vertical height shrinking of diode with halo doping |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1930016B2 (en) | 1973-10-04 |
| DE1930016A1 (en) | 1969-12-18 |
| FR2019285B1 (en) | 1974-02-22 |
| FR2019285A1 (en) | 1970-07-03 |
| DE1930016C3 (en) | 1974-05-09 |
| NL6909204A (en) | 1969-12-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES351652A1 (en) | AN INTEGRATED SEMICONDUCTOR DEVICE. | |
| GB1272788A (en) | Improvements in and relating to a semi-conductor wafer for integrated circuits and a method of forming the wafer | |
| GB1301345A (en) | ||
| GB954478A (en) | Semiconductor capacitor devices | |
| JPH01205564A (en) | Optical semiconductor device and its manufacture | |
| US3740617A (en) | Semiconductor structure and method of manufacturing same | |
| GB1003131A (en) | Semiconductor devices and their fabrication | |
| US3434019A (en) | High frequency high power transistor having overlay electrode | |
| US3395320A (en) | Isolation technique for integrated circuit structure | |
| GB1073551A (en) | Integrated circuit comprising a diode and method of making the same | |
| GB1312510A (en) | Method of manufacturing a multi-layer semiconductor device | |
| GB1263626A (en) | Epitaxial method for fabricating an avalanche diode and product | |
| GB992963A (en) | Semiconductor devices | |
| ES351788A1 (en) | A SEMICONDUCTOR DEVICE. | |
| FR2363889A1 (en) | PROCESS FOR MANUFACTURING BURIED CONDUCTIVE REGIONS IN INTEGRATED CIRCUITS AND RESULTING STRUCTURES | |
| US3711940A (en) | Method for making mos structure with precisely controlled channel length | |
| US4141136A (en) | Method of fabricating semiconductor devices with a low thermal resistance and devices obtained by the method | |
| GB1262787A (en) | Improvements in or relating to semiconductor arrangements | |
| GB1071294A (en) | Improvements in and relating to the manufacture of transistors | |
| GB1268335A (en) | Semiconductor device | |
| GB1268406A (en) | Improvements in and relating to pressure sensitive semiconductor devices and method of manufacturing the same | |
| GB1340350A (en) | Surface controlled avalanche semiconductor device | |
| GB1162565A (en) | Improvements in and relating to Semiconductor Structures | |
| GB1260026A (en) | A method of manufacturing a semiconductor photo-sensitive device | |
| GB1126338A (en) | A method of producing semiconductor bodies with an extremely low-resistance substrate |