GB1252293A - - Google Patents
Info
- Publication number
- GB1252293A GB1252293A GB1252293DA GB1252293A GB 1252293 A GB1252293 A GB 1252293A GB 1252293D A GB1252293D A GB 1252293DA GB 1252293 A GB1252293 A GB 1252293A
- Authority
- GB
- United Kingdom
- Prior art keywords
- polycrystalline
- silicon
- regions
- layer
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 abstract 7
- 238000010899 nucleation Methods 0.000 abstract 7
- 238000009792 diffusion process Methods 0.000 abstract 6
- 239000004065 semiconductor Substances 0.000 abstract 6
- 239000012535 impurity Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 1
- 238000007788 roughening Methods 0.000 abstract 1
- 238000005488 sandblasting Methods 0.000 abstract 1
- 238000006748 scratching Methods 0.000 abstract 1
- 230000002393 scratching effect Effects 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000011780 sodium chloride Substances 0.000 abstract 1
- 239000007858 starting material Substances 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Connection Of Plates (AREA)
Abstract
1,252,293. Semi-conductor devices. SONY CORP. 14 Nov., 1968 [14 Nov., 1967; 21 Dec., 1967], No. 54119/68. Heading H1K. Electrical connection to deep-lying layers in a semi-conductor structure is made through heavily doped polycrystalline regions which extend to the surface of the structure. Such regions are produced in otherwise monocrystalline structures by depositing semi-conductor material on to a monocrystalline substrate provided at selected regions with seeding sites for polycrystalline growth, so that the deposited material grows with both monocrystalline and polycrystalline portions. Diffusion into polycrystalline material is faster than into monocrystalline material so that deep and heavy doping may be affected in these connecting zones. Seeding sites may be deposits of sodium chloride, carbon, silicon dioxide, silicon monoxide, or of polycrystalline silicon or germanium. Seeding sites may be formed by roughening (e.g., sand-blasting) or scratching the semi-conductor surface. They may also be formed by alloying A1, In, Ga, Sb, P or As with the semi-conductor or by diffusing such impurities into the semi-conductor surface at very high concentrations. Fig. 1I shows part of an integrated structure containing a resistor formed in a P-type layer and an NPN transistor. As shown the N<SP>+</SP> regions 4, 4<SP>1</SP> are formed by diffusion, seeding sites 5 of polycrystalline silicon are deposited, and layer 6 is then grown. Impurities from the N<SP>+</SP> layers 4, 4<SP>1</SP> and from the bulk of the substrate 1 may be diffused into the grown layer during or after its growth. If insufficient N-type impurity diffuses into the polycrystalline material 8, diffusion of more impurities may be allowed by exposing the upper surface when the emitter 20 is being formed. The width of the collector electrode 24<SP>1</SP> (typically aluminium) may be less than, the same as, or greater than the width of the polycrystalline zone. In a variant, P-type impurity is diffused into the P- regions between devices during the formation of the resistor 15 and base region 14. If silicon oxide is used as alternative seeding material to silicon, diffusion from the N<SP>+</SP> layers into the polycrystalline material takes place round the edges of the seeding site. If an alloy zone or heavily diffused region is used as seeding site this will itself act as a diffusion source. In variant structures the N<SP>+</SP> layers may be replaced by a single epitaxial or diffused layer on the starting substrate. Fig. 2F shows a beam lead structure comprising a transistor and resistor. The starting material is an N<SP>+</SP> silicon substrate and the site for the collector connection is seeded with silicon. Contacts are platinum silicide with beam leads constituted by successive vapour deposited layer of titanium and gold and a final electrodeposited gold layer. Fig. 3 (not shown) depicts a diode in which connection from the top-surface electrode 7 to the low resistivity base layer is through a polycrystalline channel; the annular anode 4 is provided in the higher resistivity grown upper layer 3. Fig. 4G (not shown) depicts a structure like that of Fig. 1 but in which the devices are separated by heavily diffusion doped polycrystalline isolation walls 12. In operation the devices are isolated by applying a reverse bias across a contact on the polycrystalline wall and contacts on the devices such as one on heavily diffused region 25. Fig. 5 (not shown) depicts a structure comprising two double gate JUGFETs, the lower gate regions 4 of which are connected to the upper surface by annular polycrystalline regions 8. Fig. 6F shows a high capacitance diode in which the junctions are connected in parallel by a P-type diffused polycrystalline region 36A and an N-type diffused polycrystalline region 36<SP>1</SP>A. A structure may be designed to give a greater change of capacitance with applied voltage. Reference has been directed by the Comptroller to Specification 1,146,943.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7315567 | 1967-11-14 | ||
| JP8205367 | 1967-12-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1252293A true GB1252293A (en) | 1971-11-03 |
Family
ID=26414310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1252293D Expired GB1252293A (en) | 1967-11-14 | 1968-11-14 |
Country Status (8)
| Country | Link |
|---|---|
| BE (1) | BE723823A (en) |
| CH (1) | CH509663A (en) |
| DE (1) | DE1808926B2 (en) |
| FR (1) | FR1596671A (en) |
| GB (1) | GB1252293A (en) |
| NL (1) | NL157148B (en) |
| NO (1) | NO123436B (en) |
| SE (2) | SE361778B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2857837C2 (en) * | 1977-10-26 | 1983-07-14 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | A method of manufacturing a semiconductor device |
| IT1110843B (en) * | 1978-02-27 | 1986-01-06 | Rca Corp | Sunken contact for complementary type MOS devices |
-
1968
- 1968-11-13 SE SE17023/70A patent/SE361778B/xx unknown
- 1968-11-13 SE SE15378/68A patent/SE354544B/xx unknown
- 1968-11-13 NL NL6816188.A patent/NL157148B/en not_active IP Right Cessation
- 1968-11-13 CH CH1690568A patent/CH509663A/en not_active IP Right Cessation
- 1968-11-13 NO NO4492/68A patent/NO123436B/no unknown
- 1968-11-14 BE BE723823D patent/BE723823A/xx unknown
- 1968-11-14 GB GB1252293D patent/GB1252293A/en not_active Expired
- 1968-11-14 DE DE1808926A patent/DE1808926B2/en not_active Ceased
- 1968-11-14 FR FR1596671D patent/FR1596671A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1808926B2 (en) | 1979-08-02 |
| SE354544B (en) | 1973-03-12 |
| FR1596671A (en) | 1970-06-22 |
| NL6816188A (en) | 1969-05-19 |
| NO123436B (en) | 1971-11-15 |
| NL157148B (en) | 1978-06-15 |
| BE723823A (en) | 1969-04-16 |
| CH509663A (en) | 1971-06-30 |
| SE361778B (en) | 1973-11-12 |
| DE1808926A1 (en) | 1969-07-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |