GB1250988A - - Google Patents
Info
- Publication number
- GB1250988A GB1250988A GB4079969A GB1250988DA GB1250988A GB 1250988 A GB1250988 A GB 1250988A GB 4079969 A GB4079969 A GB 4079969A GB 1250988D A GB1250988D A GB 1250988DA GB 1250988 A GB1250988 A GB 1250988A
- Authority
- GB
- United Kingdom
- Prior art keywords
- regions
- ratio
- region
- resistor
- resistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011248 coating agent Substances 0.000 abstract 4
- 238000000576 coating method Methods 0.000 abstract 4
- 239000004020 conductor Substances 0.000 abstract 4
- 238000004519 manufacturing process Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
1,250,988. Integrated circuit resistors. RCA CORPORATION. 14 Aug., 1969, No. 40799/69. Heading H1K. A semi-conductor integrated circuit device of the monolithic type includes two resistors of different value, the resistors being used in conditions such that the ratio between their values is of circuit significance. The invention relates to a method of constructing such a device so that discrepancies introduced during manufacture affect the two resistance values similarly whereby the ratio is held within acceptable limits. As shown, a silicon body 12 has a first resistor 14 and a second resistor 15 of lower value, the resistance ratio being 3 : 1. The resistors 14, 15 are formed by conventional photo-etching processes and comprise diffused regions 16, 30, respectively, adjacent the body surface 18, this surface having an insulating coating 20 of silicon dioxide. Openings 22, 24 in the coating 20 receive, respectively, portions 27, 29 of conductors 26, 28 to make contact with the ends of the resistor 14. The region 30 comprises three regions 31, 32, 33 separated by non- diffused regions 34, 35 and connected at their ends by enlarged diffused regions 36, 37. Openings 38, 39 in the coating 20 above the regions 36, 37 receive, respectively, portions 40, 42 of conductors 26, 41 whereby the regions 31, 32, 33 are connected in parallel between the conductors. Each of the regions 31, 32, 33 has approximately the same thickness, width and length as the region 16 so that manufacturing discrepancies produce the same effect in each of the four regions and the ratio mentioned above is not disturbed. In another embodiment (Figs. 5, 6, not shown) having a 9 : 1 ratio, the single diffused region of the higher value resistor has a length equal to three times that of the three parallel-connected regions of the lower value resistor. To maintain this ratio, manufacturing discrepancies are allowed for by providing two openings in the coating 20 above the single diffused region at positions so as to divide this region into three equal parts between the conductors connected to the ends of the region, conducting members being positioned in each of the two openings.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4079969 | 1969-08-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1250988A true GB1250988A (en) | 1971-10-27 |
Family
ID=10416672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4079969A Expired GB1250988A (en) | 1969-08-14 | 1969-08-14 |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1250988A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4725876A (en) * | 1981-05-27 | 1988-02-16 | Nippon Electric Co., Ltd. | Semiconductor device having at least two resistors with high resistance values |
| US4757368A (en) * | 1980-12-15 | 1988-07-12 | Fujitsu Limited | Semiconductor device having electric contacts with precise resistance values |
-
1969
- 1969-08-14 GB GB4079969A patent/GB1250988A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4757368A (en) * | 1980-12-15 | 1988-07-12 | Fujitsu Limited | Semiconductor device having electric contacts with precise resistance values |
| US4725876A (en) * | 1981-05-27 | 1988-02-16 | Nippon Electric Co., Ltd. | Semiconductor device having at least two resistors with high resistance values |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1236403A (en) | Improvements relating to a semiconductor resistor | |
| US3644802A (en) | Ratio-compensated resistors for integrated circuit | |
| GB1080177A (en) | Improved method of manufacturing planar transistors | |
| US3468728A (en) | Method for forming ohmic contact for a semiconductor device | |
| FR89742E (en) | Improvements to sockets, for electrical contacts with plugs and sockets, and to their manufacturing processes | |
| US4584553A (en) | Coated layer type resistor device | |
| GB1250988A (en) | ||
| GB1415785A (en) | Method of providing a resistor | |
| GB1188950A (en) | Semiconductor Device having Insulating Films and Method of Making Same. | |
| US3593069A (en) | Integrated circuit resistor and method of making the same | |
| GB1019213A (en) | Solid circuits comprising field-effect devices known as gridistors | |
| US3943546A (en) | Transistor | |
| JPS5768055A (en) | Semiconductor device | |
| GB1225698A (en) | ||
| JPS57202774A (en) | Semiconductor device | |
| US4757368A (en) | Semiconductor device having electric contacts with precise resistance values | |
| GB1313915A (en) | Resistors for integrated circuits | |
| JP2653046B2 (en) | Linear array | |
| GB1363815A (en) | Semiconductor device and method of producing same | |
| JPS61229302A (en) | Parallel type resistor unit | |
| JPS5673458A (en) | Semiconductor device | |
| JPS5613759A (en) | Hybrid integrated circuit | |
| JPS55125645A (en) | Production of semiconductor device | |
| JPS52104882A (en) | Manufacture of semiconductor device | |
| JPH01143251A (en) | Semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |