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GB1247437A - Semiconductor electroluminescent diodes - Google Patents

Semiconductor electroluminescent diodes

Info

Publication number
GB1247437A
GB1247437A GB02353/69A GB1235369A GB1247437A GB 1247437 A GB1247437 A GB 1247437A GB 02353/69 A GB02353/69 A GB 02353/69A GB 1235369 A GB1235369 A GB 1235369A GB 1247437 A GB1247437 A GB 1247437A
Authority
GB
United Kingdom
Prior art keywords
type
solution
gap
slice
capsule
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB02353/69A
Inventor
Arthur Calverley
Michael Charles Rowland
Jeremy Clive Hallen Birbeck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NAT RES DEV
National Research Development Corp UK
Original Assignee
NAT RES DEV
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NAT RES DEV, National Research Development Corp UK filed Critical NAT RES DEV
Priority to GB02353/69A priority Critical patent/GB1247437A/en
Priority to NL7003267A priority patent/NL7003267A/xx
Priority to DE19702010779 priority patent/DE2010779A1/en
Publication of GB1247437A publication Critical patent/GB1247437A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,247,437. Electroluminescence. NATIONAL RESEARCH DEVELOPMENT CORP. 2 March, 1970 [8 March, 1969], No. 12353/69. Heading C4S. [Also in Division H1] A GaP electroluminescent diode is produced by depositing an N-type layer followed by a P-type layer containing a deep level impurity on a substrate both layers being formed by liquid phasee pitaxy (solution growth). A slice is cut from a liquid encapsulated pulled crystal of N-type GaP doped with S or Te, lapped and etched and mounted on a quartz "spade" with the phosphorus (111) face exposed. It is then vertically dipped into a molten solution of GaP in Ga doped with Te which is allowed to cool to deposit as N-type epitaxial layer on the surface. Excess Ga is removed by scraping and dissolution and the surface cleaned by etching. The slice is then placed in a horizontal capsule together with the components of a solution which comprise Ga, GaP, ZnO and Ga 2 O 3 . The capsule is flushed with forming gas and closed by means of a plug. The capsule is heated to melt the solution and then tilted to flood the solution over the wafer and then allowed to cool to deposit a P-type epitaxial layer containing Zn as the accepter and O as a deep level impurity on top of the N-type epitaxial layer. The excess Ga is again removed, the slice is sawn or cleft into dice and ohmic contacts of Au 2% Sn and Au 2% Zn are applied to the N-type substrate and P-type layer respectively. The donor impurities may be S, Te, Se, Sn or Si and the accepter impurities may be Zn or Cd.
GB02353/69A 1969-03-08 1969-03-08 Semiconductor electroluminescent diodes Expired GB1247437A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB02353/69A GB1247437A (en) 1969-03-08 1969-03-08 Semiconductor electroluminescent diodes
NL7003267A NL7003267A (en) 1969-03-08 1970-03-06
DE19702010779 DE2010779A1 (en) 1969-03-08 1970-03-06 Electroluminescent diode and process for their manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB02353/69A GB1247437A (en) 1969-03-08 1969-03-08 Semiconductor electroluminescent diodes

Publications (1)

Publication Number Publication Date
GB1247437A true GB1247437A (en) 1971-09-22

Family

ID=10002961

Family Applications (1)

Application Number Title Priority Date Filing Date
GB02353/69A Expired GB1247437A (en) 1969-03-08 1969-03-08 Semiconductor electroluminescent diodes

Country Status (3)

Country Link
DE (1) DE2010779A1 (en)
GB (1) GB1247437A (en)
NL (1) NL7003267A (en)

Also Published As

Publication number Publication date
NL7003267A (en) 1970-09-10
DE2010779A1 (en) 1970-09-24

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