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GB1235641A - Semi-conductor element with high reverse breakdown voltage - Google Patents

Semi-conductor element with high reverse breakdown voltage

Info

Publication number
GB1235641A
GB1235641A GB4108/70D GB410870D GB1235641A GB 1235641 A GB1235641 A GB 1235641A GB 4108/70 D GB4108/70 D GB 4108/70D GB 410870 D GB410870 D GB 410870D GB 1235641 A GB1235641 A GB 1235641A
Authority
GB
United Kingdom
Prior art keywords
semi
wafer
jan
junction
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4108/70D
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Brown Boveri und Cie AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland, Brown Boveri und Cie AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of GB1235641A publication Critical patent/GB1235641A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)

Abstract

1,235,641. Semi-conductor device. BROWN, BOVERI & CO. Ltd. 28 Jan., 1970 [30 Jan. 1969], No. 4108/70. Heading H1K. A semi-conductor diode comprises a discshaped silicon wafer 1 containing a PN junction (not shown) which terminates at the surface of the wafer at an annular conical chamfer 2 forming part of an annular sawtooth recess. The recess is filled with silicone rubber 4, and an end rim of a cylindrical insulating member 8, of polytetrafluoroethylene or ceramic material, embedded in the material 4. A gold-antimony foil 5 is alloyed to one face of the wafer, and an aluminium foil 6 contacts the other. A molybdenum carrier plate 7 contacts the electrode 6. The device is said to prevent flashover at the surface, in the region of the PN junction, up to a reverse voltage of 5000 volts for long periods.
GB4108/70D 1969-01-30 1970-01-28 Semi-conductor element with high reverse breakdown voltage Expired GB1235641A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH142069A CH494473A (en) 1969-01-30 1969-01-30 Semiconductor element with high reverse voltage

Publications (1)

Publication Number Publication Date
GB1235641A true GB1235641A (en) 1971-06-16

Family

ID=4210032

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4108/70D Expired GB1235641A (en) 1969-01-30 1970-01-28 Semi-conductor element with high reverse breakdown voltage

Country Status (6)

Country Link
JP (1) JPS4822021B1 (en)
AT (1) AT291393B (en)
CH (1) CH494473A (en)
FR (1) FR2044684A1 (en)
GB (1) GB1235641A (en)
NL (1) NL165606C (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1598569A (en) * 1977-04-22 1981-09-23 Lucas Industries Ltd Vehicles
TWI477698B (en) * 2012-06-06 2015-03-21 Adda Corp Fan structure

Also Published As

Publication number Publication date
CH494473A (en) 1970-07-31
JPS4822021B1 (en) 1973-07-03
AT291393B (en) 1971-07-12
NL7001166A (en) 1970-08-03
FR2044684A1 (en) 1971-02-26
NL165606B (en) 1980-11-17
NL165606C (en) 1981-04-15

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee