GB1211565A - Modulation and detection of electromagnetic waves - Google Patents
Modulation and detection of electromagnetic wavesInfo
- Publication number
- GB1211565A GB1211565A GB804668A GB804668A GB1211565A GB 1211565 A GB1211565 A GB 1211565A GB 804668 A GB804668 A GB 804668A GB 804668 A GB804668 A GB 804668A GB 1211565 A GB1211565 A GB 1211565A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- free carriers
- transitions
- light beam
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001514 detection method Methods 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 16
- 239000000969 carrier Substances 0.000 abstract 9
- 230000007704 transition Effects 0.000 abstract 4
- 230000002745 absorbent Effects 0.000 abstract 3
- 239000002250 absorbent Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 230000005684 electric field Effects 0.000 abstract 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 abstract 1
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000005670 electromagnetic radiation Effects 0.000 abstract 1
- 230000005284 excitation Effects 0.000 abstract 1
- 238000001914 filtration Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 230000000737 periodic effect Effects 0.000 abstract 1
- 230000011664 signaling Effects 0.000 abstract 1
- 238000004804 winding Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect
- G02F1/091—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect based on magneto-absorption or magneto-reflection
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR96889A FR1522324A (fr) | 1967-02-28 | 1967-02-28 | Système de modulation et de détection d'ondes électromagnétiques |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1211565A true GB1211565A (en) | 1970-11-11 |
Family
ID=8626108
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB804668A Expired GB1211565A (en) | 1967-02-28 | 1968-02-19 | Modulation and detection of electromagnetic waves |
Country Status (6)
Country | Link |
---|---|
BE (1) | BE710819A (xx) |
DE (1) | DE1639166A1 (xx) |
FR (1) | FR1522324A (xx) |
GB (1) | GB1211565A (xx) |
LU (1) | LU55512A1 (xx) |
NL (1) | NL6802776A (xx) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2028534A2 (en) * | 2007-08-20 | 2009-02-25 | Samsung Electronics Co., Ltd. | Reflective magnetic display |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2183538B1 (xx) * | 1972-05-09 | 1974-09-27 | Anvar | |
SE417137B (sv) * | 1979-05-31 | 1981-02-23 | Asea Ab | Optiskt metdon for metning av magnetiska och elektriska felt |
-
1967
- 1967-02-28 FR FR96889A patent/FR1522324A/fr not_active Expired
-
1968
- 1968-02-15 BE BE710819D patent/BE710819A/xx unknown
- 1968-02-19 LU LU55512D patent/LU55512A1/xx unknown
- 1968-02-19 GB GB804668A patent/GB1211565A/en not_active Expired
- 1968-02-28 NL NL6802776A patent/NL6802776A/xx unknown
- 1968-02-28 DE DE19681639166 patent/DE1639166A1/de active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2028534A2 (en) * | 2007-08-20 | 2009-02-25 | Samsung Electronics Co., Ltd. | Reflective magnetic display |
EP2028534A3 (en) * | 2007-08-20 | 2010-11-03 | Samsung Electronics Co., Ltd. | Reflective magnetic display |
Also Published As
Publication number | Publication date |
---|---|
FR1522324A (fr) | 1968-04-26 |
BE710819A (xx) | 1968-08-16 |
NL6802776A (xx) | 1968-08-29 |
DE1639166A1 (de) | 1970-06-04 |
LU55512A1 (xx) | 1969-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4348686A (en) | Microwave-infrared detector with semiconductor superlattice region | |
US3200259A (en) | Solid state electrical devices utilizing phonon propagation | |
US4450460A (en) | Magnetic-infrared-emitting diode | |
US2683794A (en) | Infrared energy source | |
US3229106A (en) | Method of modulating light with intrinsic semiconductor device and electrical signal modulator employing such device | |
Schacham et al. | Light‐modulated Hall effect for extending characterization of semiconductor materials | |
GB1211565A (en) | Modulation and detection of electromagnetic waves | |
Sah et al. | Recombination properties of the gold acceptor level in silicon using the impurity photovoltaic effect | |
GB770066A (en) | Improvements in or relating to semi-conductor devices having variable electric characteristics | |
US3265899A (en) | Semiconductor amplifying radiation detector | |
Agusta et al. | Opto‐Electric Effects in Ge‐GaAs p‐n Heterojunctions | |
US5063419A (en) | Heterostructure device useable as a far infrared photodetector | |
US3443102A (en) | Semiconductor photocell detector with variable spectral response | |
Flood et al. | ESR studies of trans-(CH) x during photoexcitation | |
Scott | Infrared photoconductivity of shallow impurities in GaP | |
US3809953A (en) | Method of and device for controlling optical conversion in semiconductor | |
US3205357A (en) | Solid state radiation detector | |
Okumura et al. | New method to determine the photoionization threshold energy of a deep level from photocapacitance | |
Chmill et al. | Radiation resistance of GaAs structures based on pi-nu junctions | |
Seiler et al. | Absorption processes near the bandgap of InSb: Laser-induced hot electron and photoconductivity studies | |
US3936637A (en) | Thermally stimulated detrapping of charged carriers in cryogenic photoconductive material | |
US3470375A (en) | High frequency semiconductor systems using electric fields perpendicular to the direction of wave propagation | |
Barnes | Neutron Damage in GaP Light‐Emitting Diodes | |
SU472601A1 (ru) | Оптоэлектронна пара | |
Guthmann et al. | Recombination phenomena in tellurium |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |