GB1205211A - Transferred electron oscillators - Google Patents
Transferred electron oscillatorsInfo
- Publication number
- GB1205211A GB1205211A GB32773/66A GB3277366A GB1205211A GB 1205211 A GB1205211 A GB 1205211A GB 32773/66 A GB32773/66 A GB 32773/66A GB 3277366 A GB3277366 A GB 3277366A GB 1205211 A GB1205211 A GB 1205211A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- anode
- cathode
- electrodes
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 2
- 101100188555 Arabidopsis thaliana OCT6 gene Proteins 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
Landscapes
- Oscillators With Electromechanical Resonators (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
1,205,211. Transferred electron oscillators. NATIONAL RESEARCH DEVELOPMENT CORP. 6 Oct., 1967 [21 July, 1966], No. 32773/66. Heading H1K. A transferred electron oscillator comprises a piece of suitable material, e.g. gallium arsenide, having two electrodes to serve as anode and cathode and a third electrode for producing a depletion layer in the neighbourhood of the first two electrodes, the third electrode being reversebiased relative to the first two and means being provided to vary the reverse bias and thereby alter the current path between the anode and cathode so that the frequency of the oscillations is changed. In a first embodiment the first two electrodes are in the form of parallel metallic or diffused n<SP>+</SP> strips in one face of the material and the third electrode is a diffused or alloyed p-type region lying between the other two, whilst in a second embodiment the first two electrodes diverge and the third electrode is disposed across the closer pair of ends of the first two. In a third embodiment the material is an epitaxial n-type layer on a p-type substrate which also acts as the third electrode, and in a fourth embodiment the material is deposited on an n+ -type substrate which acts as the anode. The cathode is a metallic or diffused n<SP>+</SP> region in the surface of the material opposite the anode and the third electrode is an annular p-type region surrounding the cathode.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB32773/66A GB1205211A (en) | 1966-07-21 | 1966-07-21 | Transferred electron oscillators |
US655121A US3541404A (en) | 1966-07-21 | 1967-07-21 | Transferred electron oscillators |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB32773/66A GB1205211A (en) | 1966-07-21 | 1966-07-21 | Transferred electron oscillators |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1205211A true GB1205211A (en) | 1970-09-16 |
Family
ID=10343781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB32773/66A Expired GB1205211A (en) | 1966-07-21 | 1966-07-21 | Transferred electron oscillators |
Country Status (2)
Country | Link |
---|---|
US (1) | US3541404A (en) |
GB (1) | GB1205211A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2620980A1 (en) * | 1975-05-13 | 1976-12-02 | Secr Defence Brit | TRANSMISSION ELECTRONIC ARRANGEMENT |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4134122A (en) * | 1974-11-29 | 1979-01-09 | Thomson-Csf | Hyperfrequency device with gunn effect |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL290035A (en) * | 1962-03-12 | |||
GB1070261A (en) * | 1963-06-10 | 1967-06-01 | Ibm | A semiconductor device |
DE1258891B (en) * | 1965-11-06 | 1968-01-18 | Telefunken Patent | Arrangement for pulse delay with a number of semiconductor volume effect elements |
US3439236A (en) * | 1965-12-09 | 1969-04-15 | Rca Corp | Insulated-gate field-effect transistor with critical bulk characteristics for use as an oscillator component |
-
1966
- 1966-07-21 GB GB32773/66A patent/GB1205211A/en not_active Expired
-
1967
- 1967-07-21 US US655121A patent/US3541404A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2620980A1 (en) * | 1975-05-13 | 1976-12-02 | Secr Defence Brit | TRANSMISSION ELECTRONIC ARRANGEMENT |
Also Published As
Publication number | Publication date |
---|---|
US3541404A (en) | 1970-11-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US2570978A (en) | Semiconductor translating device | |
US2899646A (en) | Tread | |
US2764642A (en) | Semiconductor signal translating devices | |
GB1116384A (en) | Semiconductor device | |
US2936425A (en) | Semiconductor amplifying device | |
GB1507091A (en) | Schottky-gate field-effect transistors | |
US3377566A (en) | Voltage controlled variable frequency gunn-effect oscillator | |
US3114864A (en) | Semiconductor with multi-regions of one conductivity-type and a common region of opposite conductivity-type forming district tunneldiode junctions | |
GB1205211A (en) | Transferred electron oscillators | |
GB1330479A (en) | Semiconductor devices | |
US2958022A (en) | Asymmetrically conductive device | |
GB1154049A (en) | Improvements in or relating to Avalanche Diodes. | |
US3488527A (en) | Punch-through,microwave negativeresistance device | |
GB1292213A (en) | Improvements in and relating to semiconductor devices | |
US3090014A (en) | Negative resistance device modulator | |
US3882528A (en) | Semiconductor device for producing or amplifying high-frequency electromagnetic oscillations | |
US3393376A (en) | Punch-through microwave oscillator | |
US4291320A (en) | Heterojunction IMPATT diode | |
US3579143A (en) | Method for increasing the efficiency of lsa oscillator devices by uniform illumination | |
JPS57208174A (en) | Semiconductor device | |
GB1303659A (en) | ||
US3493823A (en) | Negative-resistance semiconductor device for high frequencies | |
US2867732A (en) | Current multiplication transistors and method of producing same | |
GB1514240A (en) | Gunn effect semiconductor device | |
GB1379274A (en) | Arrangement for producing high frequency electrical oscillations |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PLNP | Patent lapsed through nonpayment of renewal fees |