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GB1201659A - Improvements in or relating to memory devices - Google Patents

Improvements in or relating to memory devices

Info

Publication number
GB1201659A
GB1201659A GB5578767A GB5578767A GB1201659A GB 1201659 A GB1201659 A GB 1201659A GB 5578767 A GB5578767 A GB 5578767A GB 5578767 A GB5578767 A GB 5578767A GB 1201659 A GB1201659 A GB 1201659A
Authority
GB
United Kingdom
Prior art keywords
layer
target
bombardment
dec
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5578767A
Inventor
Geoffrey Dearnaley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Atomic Energy Authority
Original Assignee
UK Atomic Energy Authority
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Atomic Energy Authority filed Critical UK Atomic Energy Authority
Priority to US781721A priority Critical patent/US3599181A/en
Priority to NL6817561A priority patent/NL6817561A/xx
Priority to FR1597737D priority patent/FR1597737A/fr
Publication of GB1201659A publication Critical patent/GB1201659A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/048—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using other optical storage elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/44—Charge-storage screens exhibiting internal electric effects caused by particle radiation, e.g. bombardment-induced conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)

Abstract

1,201,659. Cathode ray storage tubes; semiconductor devices. UNITED KINGDOM ATOMIC ENERGY AUTHORITY. 5 Dec., 1968 [25 Sept., 1967; 7 Dec., 1967], Nos. 39331/67 and 55787/67. Headings H1D and H1K. The target of a cathode-ray storage tube for storing binary data comprises an unsaturated oxide or fluoride layer of material which exhibits bombardment-induced conductivity which persists after the bombardment ceases, the material being supported on a conducting or semi-conducting substrate. In the drawing the target comprises a layer of silicon monoxide 11, which may be about 1 micron thick, deposited on an N-type silicon layer 13 which forms a junction with a P-type silicon layer 14. The strength of the scanning electron beam is controlled according to whether the operation desired is reading, writing or erasing, for which the beam intensities may be 5 Î 10<SP>-10</SP>, 10<SP>-8</SP> and more than 10<SP>-7</SP> A/square micron respectively. The sensitivity may be increased by applying a very thin layer of gold or platinum to the surface of the oxide layer, and the erase time may be reduced by operating the target at 200‹ C. The output may be derived from a returning beam reflected from the target to an electron multiplier (not shown) instead of from the junction between layers 13 and 14, and the semi-conductor substrate may be replaced by a metal one.
GB5578767A 1967-09-25 1967-09-25 Improvements in or relating to memory devices Expired GB1201659A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US781721A US3599181A (en) 1967-12-07 1968-12-06 Solid state computer memory device
NL6817561A NL6817561A (en) 1967-12-07 1968-12-06
FR1597737D FR1597737A (en) 1967-12-07 1968-12-06

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3933167 1967-09-25

Publications (1)

Publication Number Publication Date
GB1201659A true GB1201659A (en) 1970-08-12

Family

ID=10408988

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5578767A Expired GB1201659A (en) 1967-09-25 1967-09-25 Improvements in or relating to memory devices

Country Status (1)

Country Link
GB (1) GB1201659A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2130438A1 (en) * 1971-03-17 1972-11-03 Gen Electric

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2130438A1 (en) * 1971-03-17 1972-11-03 Gen Electric

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees