GB1162475A - Improvements in or relating to Thin-Film Electronic Circuit Assemblies. - Google Patents
Improvements in or relating to Thin-Film Electronic Circuit Assemblies.Info
- Publication number
- GB1162475A GB1162475A GB6342/68A GB634268A GB1162475A GB 1162475 A GB1162475 A GB 1162475A GB 6342/68 A GB6342/68 A GB 6342/68A GB 634268 A GB634268 A GB 634268A GB 1162475 A GB1162475 A GB 1162475A
- Authority
- GB
- United Kingdom
- Prior art keywords
- film
- tantalum
- thin
- electrode
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 230000000712 assembly Effects 0.000 title 1
- 238000000429 assembly Methods 0.000 title 1
- 239000010408 film Substances 0.000 abstract 3
- 229910052715 tantalum Inorganic materials 0.000 abstract 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract 2
- 229910001936 tantalum oxide Inorganic materials 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000012777 electrically insulating material Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000010445 mica Substances 0.000 abstract 1
- 229910052618 mica group Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
1,162,475. Semiconductor devices. SIEMENS A.G. 8 Feb., 1968 [9 Feb., 1967], No. 6342/68. Heading H1K. [Also in Division C7] A thin film circuit assembly comprises a number of active and passive components in the form of thin films connected by thin flat conducting paths, all deposited on one face of a carrier plate of electrically insulating material such as glass, ceramic or mica. The preferred active component described comprises a negative resistance diode constituted by a film of gallium arsenide one micron thick sandwiched between a film of tantalum forming one electrode on the carrier and a further electrode of aluminium or gold. Capacitors are formed of a dielectric layer of tantalum oxide sandwiched between a film of tantalum forming one electrode on the carrier and a further electrode of gold. Resistances are formed of tantalum oxide and the conducting paths are of tantalum. Terminal regions are provided to allow external contact to the circuit.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0108232 | 1967-02-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1162475A true GB1162475A (en) | 1969-08-27 |
Family
ID=7528656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB6342/68A Expired GB1162475A (en) | 1967-02-09 | 1968-02-08 | Improvements in or relating to Thin-Film Electronic Circuit Assemblies. |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1591436A1 (en) |
| FR (1) | FR1555043A (en) |
| GB (1) | GB1162475A (en) |
| NL (1) | NL6801368A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4884553A (en) * | 1972-01-24 | 1973-11-09 |
-
1967
- 1967-02-09 DE DE19671591436 patent/DE1591436A1/en active Pending
-
1968
- 1968-01-30 NL NL6801368A patent/NL6801368A/xx unknown
- 1968-02-08 GB GB6342/68A patent/GB1162475A/en not_active Expired
- 1968-02-08 FR FR1555043D patent/FR1555043A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1555043A (en) | 1969-01-24 |
| DE1591436A1 (en) | 1969-11-06 |
| NL6801368A (en) | 1968-08-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] |