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GB1160162A - Apparatus and method for production of Epitaxial Films - Google Patents

Apparatus and method for production of Epitaxial Films

Info

Publication number
GB1160162A
GB1160162A GB16567A GB16567A GB1160162A GB 1160162 A GB1160162 A GB 1160162A GB 16567 A GB16567 A GB 16567A GB 16567 A GB16567 A GB 16567A GB 1160162 A GB1160162 A GB 1160162A
Authority
GB
United Kingdom
Prior art keywords
substrate
zone
gaas
dopant
fed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB16567A
Inventor
John William Burd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monsanto Co
Original Assignee
Monsanto Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monsanto Co filed Critical Monsanto Co
Priority to GB16567A priority Critical patent/GB1160162A/en
Publication of GB1160162A publication Critical patent/GB1160162A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)

Abstract

1,160,162. Depositing semi-conductor material. MONSANTO CO. 2 Jan., 1967, No. 165/67. Heading C1A. [Also in Division C7] In a process for depositing an epitaxial film of semi-conductor material on a substrate from a flowing gas stream, the substrate support is rotated about an axis which lies in the direction of gas flow, and the surface of the substrate is in a plane which is not perpendicular to the axis of rotation. In Fig. 1, H 2 and HCl are introduced at 11 and react with Group III source, e.g. Ga, at 12 in zone 1 (400-1100‹ C.). Group V sources, e.g. PCl 3 , AsCl 3 or AsH 3 , may be fed through 11 or 13<SP>1</SP>, and dopant may be fed at 13<SP>1</SP>. The gases mix in zone 2 (500- 1200‹ C.) and pass into deposition zone 3 (400-1100‹ C.) in laminar flow. Substrate wafers w are mounted on octagonal pyramid 44 supported by rotating shaft 34. An alternative arrangement (Fig. 4, not shown) is identical except that the vessel is horizontal, and the substrate is held in a " fork " (see Fig. 6). Reference is also made to the use of bromides and iodides as reactants. Semiconductor materials referred to are Si and the nitrides. phosphides, arsenides, and antimonides of B, Al, Ga and In, and mixed compositions thereof; in particular, GaP, GaAs, and GaAs- P. The substrate may be a III-V, II-VI, I-VII compound, Si or Ge. Multiple structures may be built up by changing the dopant, using an H 2 flush.
GB16567A 1967-01-02 1967-01-02 Apparatus and method for production of Epitaxial Films Expired GB1160162A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB16567A GB1160162A (en) 1967-01-02 1967-01-02 Apparatus and method for production of Epitaxial Films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB16567A GB1160162A (en) 1967-01-02 1967-01-02 Apparatus and method for production of Epitaxial Films

Publications (1)

Publication Number Publication Date
GB1160162A true GB1160162A (en) 1969-07-30

Family

ID=9699556

Family Applications (1)

Application Number Title Priority Date Filing Date
GB16567A Expired GB1160162A (en) 1967-01-02 1967-01-02 Apparatus and method for production of Epitaxial Films

Country Status (1)

Country Link
GB (1) GB1160162A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2852542A1 (en) * 1978-12-05 1980-06-12 Mitsubishi Monsanto Chem Epitaxial semiconductor cpd. layer grown on substrate - in furnace where substrate carrier is coated with carbon powder so substrate does not bond to carrier
EP0164892A1 (en) * 1984-05-15 1985-12-18 Fujitsu Limited Horizontal furnace apparatus
US4664743A (en) * 1984-08-21 1987-05-12 British Telecommunications Plc Growth of semi-conductors and apparatus for use therein
GB2212173A (en) * 1987-11-11 1989-07-19 Sumitomo Chemical Co Heated reactor for vapor-phase growth of films
RU2446236C2 (en) * 2004-10-16 2012-03-27 Аззурро Семикондакторс Аг GaN OR AlGaN CRYSTAL OBTAINING METHOD

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2852542A1 (en) * 1978-12-05 1980-06-12 Mitsubishi Monsanto Chem Epitaxial semiconductor cpd. layer grown on substrate - in furnace where substrate carrier is coated with carbon powder so substrate does not bond to carrier
EP0164892A1 (en) * 1984-05-15 1985-12-18 Fujitsu Limited Horizontal furnace apparatus
US4613305A (en) * 1984-05-15 1986-09-23 Fujitsu Limited Horizontal furnace with a suspension cantilever loading system
US4664743A (en) * 1984-08-21 1987-05-12 British Telecommunications Plc Growth of semi-conductors and apparatus for use therein
GB2212173A (en) * 1987-11-11 1989-07-19 Sumitomo Chemical Co Heated reactor for vapor-phase growth of films
US4976216A (en) * 1987-11-11 1990-12-11 Sumitomo Chemical Co., Ltd. Apparatus for vapor-phase growth
GB2212173B (en) * 1987-11-11 1991-10-16 Sumitomo Chemical Co Heated reactor fo vapor-phase growth of films
RU2446236C2 (en) * 2004-10-16 2012-03-27 Аззурро Семикондакторс Аг GaN OR AlGaN CRYSTAL OBTAINING METHOD

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee