GB1158256A - Semiconductor Switch for Handling Rapidly Increasing Currents. - Google Patents
Semiconductor Switch for Handling Rapidly Increasing Currents.Info
- Publication number
- GB1158256A GB1158256A GB42323/66A GB4232366A GB1158256A GB 1158256 A GB1158256 A GB 1158256A GB 42323/66 A GB42323/66 A GB 42323/66A GB 4232366 A GB4232366 A GB 4232366A GB 1158256 A GB1158256 A GB 1158256A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cathode region
- cathode
- produce
- produced
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000011888 foil Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 229910000521 B alloy Inorganic materials 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 239000005030 aluminium foil Substances 0.000 abstract 1
- OPEKUPPJGIMIDT-UHFFFAOYSA-N boron gold Chemical compound [B].[Au] OPEKUPPJGIMIDT-UHFFFAOYSA-N 0.000 abstract 1
- 238000010304 firing Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 238000005488 sandblasting Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 238000007738 vacuum evaporation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Thyristors (AREA)
Abstract
1,158,256. Semi-conductor devices. WESTINGHOUSE ELECTRIC CORP. 22 Sept., 1966 [23 Oct., 1965], No. 42323/66. Addition to 1,158,255. Heading H1K. In an S.C.R. of the kind described in Specification 1,158,255, in which the switching-on speed is increased by arranging the gate contact adjacent to a part of the cathode region not contacted by the cathode electrode so that a lateral voltage drop is produced on firing, the cathode electrode contacts at least half of the area of the cathode region, and the uncontacted part of the cathode region is thinner than the part contacted by the cathode electrode. The device shown in Fig. 2 is produced by diffusing aluminium and gallium into an N-type silicon wafer to produce a P-type surface layer and then selectively diffusing-in phosphorus using an oxide mask to produce an annular N-type cathode region 11. A gold-boron alloy foil 33 and an aluminium foil 32a are fused to opposite faces to produce P + type gate and anode contact regions 33a, 32b respectively. A layer 31a of aluminium is deposited by vacuum evaporation. The edges of the wafer are removed by sandblasting, molybdenum cathode and anode electrodes 31c, 32c are hard soldered to layers 31a and 32a and the device is encapsulated. The uncontacted part 11a of the cathode region 11 is reduced in thickness by etching to increase its lateral resistance. The cathode region may also be produced by alloying a gold-antimony foil to the surface and removing the excess metal from the uncontacted portion by etching. In an alternative embodiment, Fig. 3 (not shown), the cathode region is square-shaped with the gate contact inset into one corner.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US50382665A | 1965-10-23 | 1965-10-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1158256A true GB1158256A (en) | 1969-07-16 |
Family
ID=24003677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB42323/66A Expired GB1158256A (en) | 1965-10-23 | 1966-09-22 | Semiconductor Switch for Handling Rapidly Increasing Currents. |
Country Status (2)
| Country | Link |
|---|---|
| BE (1) | BE688752A (en) |
| GB (1) | GB1158256A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2428919A1 (en) * | 1978-06-15 | 1980-01-11 | Bbc Brown Boveri & Cie | POWER THYRISTOR, ITS MANUFACTURING METHOD AND APPLICATION OF THYRISTORS OF THIS TYPE TO STATIC RECTIFIER CIRCUITS |
-
1966
- 1966-09-22 GB GB42323/66A patent/GB1158256A/en not_active Expired
- 1966-10-21 BE BE688752D patent/BE688752A/xx not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2428919A1 (en) * | 1978-06-15 | 1980-01-11 | Bbc Brown Boveri & Cie | POWER THYRISTOR, ITS MANUFACTURING METHOD AND APPLICATION OF THYRISTORS OF THIS TYPE TO STATIC RECTIFIER CIRCUITS |
Also Published As
| Publication number | Publication date |
|---|---|
| BE688752A (en) | 1967-03-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |