GB1156905A - Improvements in or relating to Luminescence Diodes - Google Patents
Improvements in or relating to Luminescence DiodesInfo
- Publication number
- GB1156905A GB1156905A GB49160/67A GB4916067A GB1156905A GB 1156905 A GB1156905 A GB 1156905A GB 49160/67 A GB49160/67 A GB 49160/67A GB 4916067 A GB4916067 A GB 4916067A GB 1156905 A GB1156905 A GB 1156905A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- tin
- oct
- pellet
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004020 luminiscence type Methods 0.000 title 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 2
- 239000008188 pellet Substances 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910001128 Sn alloy Inorganic materials 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- FHMDYDAXYDRBGZ-UHFFFAOYSA-N platinum tin Chemical compound [Sn].[Pt] FHMDYDAXYDRBGZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1,156,905. Electroluminescence. SIEMENS A.G. 30 Oct., 1967 [31 Oct., 1966], No. 49160/67. Addition to 1,156,904. Heading C4S. [Also in Division H1] A gallium arsenide luminescent diode, the PN junction of which lies in a 100 crystal plane, is formed by alloying to a 100 face of an N-type GaAs wafer a pellet consisting of tin and an acceptor dopant in a weight ratio between 100 and 10 to 1. In the embodiment the junction is made by a press powder alloying process in accordance with the programme illustrated in Fig. 2 (not shown), using a pellet of zinc-tin alloy (or an alloy consisting of at least one Group II metal) and then etching away the non-planar edges of the 30 Á deep junction. An element produced in this way is preferably soldered by a tin-platinum layer 4 to an annular molybdenum contact 3 which carries a metalcapped ceramic tube 5 protecting the junction. The unprotected face of the element is of hemispherical form to reduce internal reflection.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES102202A DE1258980B (en) | 1966-02-24 | 1966-02-24 | A B luminescent diode - especially GaAs luminescent diode - with a low temperature coefficient and high luminous efficiency |
| DES0106810 | 1966-10-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1156905A true GB1156905A (en) | 1969-07-02 |
Family
ID=25998362
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8663/67A Expired GB1156904A (en) | 1966-02-24 | 1967-02-23 | Improvements in or relating to Luminescence Diodes |
| GB49160/67A Expired GB1156905A (en) | 1966-02-24 | 1967-10-30 | Improvements in or relating to Luminescence Diodes |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8663/67A Expired GB1156904A (en) | 1966-02-24 | 1967-02-23 | Improvements in or relating to Luminescence Diodes |
Country Status (6)
| Country | Link |
|---|---|
| CH (1) | CH471520A (en) |
| DE (2) | DE1258980B (en) |
| FR (2) | FR1515311A (en) |
| GB (2) | GB1156904A (en) |
| NL (2) | NL6617894A (en) |
| SE (2) | SE307813B (en) |
-
1966
- 1966-02-24 DE DES102202A patent/DE1258980B/en active Pending
- 1966-10-31 DE DE19661539562 patent/DE1539562A1/en active Pending
- 1966-12-20 NL NL6617894A patent/NL6617894A/xx unknown
-
1967
- 1967-02-21 FR FR95793A patent/FR1515311A/en not_active Expired
- 1967-02-22 CH CH259867A patent/CH471520A/en not_active IP Right Cessation
- 1967-02-23 SE SE2526/67A patent/SE307813B/xx unknown
- 1967-02-23 GB GB8663/67A patent/GB1156904A/en not_active Expired
- 1967-06-29 SE SE9791/67*A patent/SE315333B/xx unknown
- 1967-07-17 NL NL6709903A patent/NL6709903A/xx unknown
- 1967-10-26 FR FR126010A patent/FR93199E/en not_active Expired
- 1967-10-30 GB GB49160/67A patent/GB1156905A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH471520A (en) | 1969-04-15 |
| SE307813B (en) | 1969-01-20 |
| SE315333B (en) | 1969-09-29 |
| NL6617894A (en) | 1967-08-25 |
| FR1515311A (en) | 1968-03-01 |
| FR93199E (en) | 1969-02-21 |
| NL6709903A (en) | 1968-05-01 |
| DE1539562A1 (en) | 1970-01-02 |
| DE1258980B (en) | 1968-01-18 |
| GB1156904A (en) | 1969-07-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1028782A (en) | Semiconductor light-producing device | |
| GB1229776A (en) | ||
| GB1347752A (en) | Semiconductor electron emitter | |
| GB978561A (en) | Improvements relating to transistors | |
| GB1223196A (en) | Light-emitting diodes and method of making same | |
| GB1242660A (en) | Improvements in or relating to luminescence diodes | |
| GB1228717A (en) | ||
| GB1156905A (en) | Improvements in or relating to Luminescence Diodes | |
| GB896717A (en) | Semiconductor diode | |
| GB1215539A (en) | Hybrid junction semiconductor device and method of making the same | |
| GB1300067A (en) | Process for the fabrication of light-emitting semiconductor diodes | |
| GB1357650A (en) | Methods of manufacturing semiconductor devices | |
| GB1143472A (en) | Improvements in or relating to luminescence diodes | |
| GB1268406A (en) | Improvements in and relating to pressure sensitive semiconductor devices and method of manufacturing the same | |
| GB1448606A (en) | Semiconductor luminescence diodes | |
| GB1147015A (en) | Semiconductor devices | |
| GB789931A (en) | Improvements in devices comprising semi-conductors | |
| GB1222527A (en) | Improvements in or relating to semi-conductor devices | |
| GB1095047A (en) | Semi-conductor devices and the manufacture thereof | |
| JPS54158885A (en) | Semiconductor integrated circuit | |
| GB1290718A (en) | ||
| GB1058036A (en) | Semiconductor devices and methods of manufacturing them | |
| GB986922A (en) | Improvements relating to microwave diode | |
| JPS5423391A (en) | Gallium-arsenic semiconductor element | |
| GB1167300A (en) | Improvements in or relating to Luminescent Diodes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |