GB1156903A - Improvements in or relating to Luminescent Diodes - Google Patents
Improvements in or relating to Luminescent DiodesInfo
- Publication number
- GB1156903A GB1156903A GB1311/67A GB131167A GB1156903A GB 1156903 A GB1156903 A GB 1156903A GB 1311/67 A GB1311/67 A GB 1311/67A GB 131167 A GB131167 A GB 131167A GB 1156903 A GB1156903 A GB 1156903A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- type zone
- radiation
- zone
- absorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 abstract 5
- 238000010521 absorption reaction Methods 0.000 abstract 4
- 230000005855 radiation Effects 0.000 abstract 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 2
- 238000004020 luminiscence type Methods 0.000 abstract 2
- 239000002800 charge carrier Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 239000008188 pellet Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/74—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing arsenic, antimony or bismuth
- C09K11/7492—Arsenides; Nitrides; Phosphides
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Led Devices (AREA)
Abstract
1,156,903. Electroluminescence. SIEMENS A.G. 10 Jan., 1967 [14 Jan., 1966 (2)], No. 1311/67. Heading C4S. [Also in Division H1] An electroluminescent diode comprises a body of a III-V compound in which the radiation reproduced at a PN junction passes through an N-type zone the doping level of which is selected so that the absorption coefficient of the material is reduced to a minimum for the luminescence maximum of the radiation. As the concentration of donors in the N-type zone increases the band gap of the material increases resulting in a decrease in the absorption of radiation of a given wavelength. At the same time, however, the absorption due to free charge carriers increases so that the material exhibits a minimum total absorption for a given wavelength at a particular value of donor concentration. The band gap of the material of the N-type zone preferably exceeds that of the P-type zone by the luminescence half width. The band gap of the material of the P-type zone may be decreased by counter doping, for example by alloying a pellet containing Sn as well as Zn to an N-type GaAs wafer to form the junction. The composition of the P-type region may differ from that of the N-type region, for example if the N-type region is of GaAs the P-type region may be of (Ga 1 - r In r ) (As 1-s Sb s ) where r # 0, s # 0 and r + s > 0. As shown, Fig. 2, a P- type zone 2 is produced by epitaxial deposition on the plane face of a hemispherical N-type body 1 through which the radiation is emitted. The P-type zone may also be produced by alloying, Fig. 3 (not shown), or by diffusion.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES101436A DE1257965B (en) | 1966-01-14 | 1966-01-14 | AIIIBA light emitting diode, especially based on GaAs, with high light yield |
| DE1966S0101435 DE1278002C2 (en) | 1966-01-14 | 1966-01-14 | LUMINESCENT DIODE FROM GAAS AS BASIC MATERIAL |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1156903A true GB1156903A (en) | 1969-07-02 |
Family
ID=25998341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1311/67A Expired GB1156903A (en) | 1966-01-14 | 1967-01-10 | Improvements in or relating to Luminescent Diodes |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5132076B1 (en) |
| CH (1) | CH459365A (en) |
| DE (2) | DE1278002C2 (en) |
| FR (1) | FR1507827A (en) |
| GB (1) | GB1156903A (en) |
| NL (1) | NL6616658A (en) |
| SE (1) | SE323144B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2206447A (en) * | 1987-06-29 | 1989-01-05 | Secr Defence | Lensed photodetector |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3758875A (en) * | 1970-05-01 | 1973-09-11 | Bell Telephone Labor Inc | Double heterostructure junction lasers |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1416939A (en) * | 1963-12-12 | 1965-11-05 | Gen Electric | Improvements in optical transmission processes of alloyed semiconductor light sources |
-
1966
- 1966-01-14 DE DE1966S0101435 patent/DE1278002C2/en not_active Expired
- 1966-01-14 DE DES101436A patent/DE1257965B/en active Pending
- 1966-11-25 NL NL6616658A patent/NL6616658A/xx unknown
-
1967
- 1967-01-10 GB GB1311/67A patent/GB1156903A/en not_active Expired
- 1967-01-12 CH CH43167A patent/CH459365A/en unknown
- 1967-01-12 SE SE481/67A patent/SE323144B/xx unknown
- 1967-01-12 FR FR90844A patent/FR1507827A/en not_active Expired
- 1967-01-13 JP JP226967A patent/JPS5132076B1/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2206447A (en) * | 1987-06-29 | 1989-01-05 | Secr Defence | Lensed photodetector |
| GB2206447B (en) * | 1987-06-29 | 1991-05-01 | Secr Defence | Lensed photodetector array |
Also Published As
| Publication number | Publication date |
|---|---|
| CH459365A (en) | 1968-07-15 |
| NL6616658A (en) | 1967-07-17 |
| FR1507827A (en) | 1967-12-29 |
| SE323144B (en) | 1970-04-27 |
| DE1278002B (en) | 1968-09-19 |
| DE1278002C2 (en) | 1977-11-03 |
| JPS5132076B1 (en) | 1976-09-10 |
| DE1257965B (en) | 1968-01-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |